GB/T 30652-2023 in English

VALID

Trichlorosilane for silicon epitaxial

Issued on:2023-08-06
Implemented on:2024-03-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $160.00
$156.00

Standard No:	GB/T 30652-2023
Document status:	VALID
Title in English:	Trichlorosilane for silicon epitaxial
Title in Chinese:	硅外延用三氯氢硅
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2023-08-06
Implemented on:	2024-03-01
Superseding:	GB/T 30652-2014 Trichlorosilane for silicon epitaxial
ICS Classification:	29.040-Insulating fluids
Chinese Classification:	H83-Compound semiconductor material
Professional Classification:	GB-National Standard
Related Keywords:	silicon epitaxy trichlorosilane silicon epitaxial introduction silicon epitaxy standard formulation trichlorosilane application trichlorosilane
Related Topics:	Silica silicon infrared Hydrogen Chloride Infrared Hydrogen Chloride Infrared GB/T 30652- Silica silicon infrared Yanbian Triassic Silica + infrared Silicon oxide silicon infrared peak H spectrum triplet Siloxane Infrared Hydrogen spectrum + triplet + Silicon third order peak Infrared silica peak Infrared Silica Trichlorosilane post-treatment method Infrared Silica trihydrogen method Silicon oxide silicon infrared peak hydrogen chloride Silicon oxide silicon infrared peak Hydride Vapor Phase Epitaxy infrared hydrogen NH3 external standard three-point method Data extension triplet proton Hydrogen three-phase Data extension Silicon triplet spectrum triplet H spectrum triplet Nitrogen three series GBT30652 Epitaxial silicon wafer flatness gb/t 30652 Electronic grade trichlorosilane quality Trichlorosilane electronic special gas Trichlorosilane detection

《GB/T 30652-2023硅外延用三氯氢硅》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准委。

Introduction

1. Background and significance of standard formulation

Trichlorosilane for silicon epitaxy is an important basic substance in the field of semiconductor materials, and its quality is directly related to the performance and reliability of semiconductor devices. With the rapid development of semiconductor technology, higher requirements are placed on the purity and impurity control of trichlorosilane.

2. Comparative analysis of standard frameworks

Standard dimensions	GB/T 30652—2014	GB/T 30652—2023	Comparative analysis
Scope of application	Trichlorosilane for silicon epitaxy	Trichlorosilane for silicon epitaxy and preparation method thereof	Expanded requirements for preparation method
Technical indicators	≥99.99%	≥99.99%	Stricter impurity control
Test Methods	GB/T 28654	GB/T 28654 + YS/T 1060	Adding Gas Chromatography

3. Challenges and Solutions in Practical Applications

Case 1:When a semiconductor company purchased trichlorosilane for silicon epitaxy, it was found that the impurities fluctuated greatly between batches. By optimizing the sample preparation method and increasing the sampling frequency, the product quality stability was significantly improved.

Case 2:In the determination of donor impurity content, chemical vapor deposition (CVD) was used to replace the traditional zone melt pulling method, which greatly improved the detection efficiency and accuracy.

4. Implementation Suggestions

Supply Chain Management:It is recommended that enterprises establish a stable supplier evaluation system to ensure that the quality of raw materials meets national standards.
Improvement of Testing Capabilities:It is recommended that enterprises invest in advanced analytical equipment (such as ICP-MS, gas chromatographs) to enhance the testing capabilities of internal laboratories.
Process Optimization:It is recommended to use chemical vapor deposition (CVD) to evaluate impurity content to improve detection efficiency and accuracy.

More samples: JC/T 2453-2018 QC/T 942-2021 JJG 21-2008

Sample only — not a preview of GB/T 30652-2023

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