GB/T 4060-2007 in English

SUPERSEDED

Polycrystalline silicon—Examination method—Vacuum zone-melting on boron

Issued on:2007-12-18
Implemented on:2008-02-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $120.00
$117.00

Standard No:	GB/T 4060-2007
Document status:	SUPERSEDED
Superseded by:	GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method
Superseded on:	2019-06-01
Title in English:	Polycrystalline silicon—Examination method—Vacuum zone-melting on boron
Title in Chinese:	硅多晶真空区熔基硼检验方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2007-12-18
Implemented on:	2008-02-01
Superseding:	GB/T 4060-1983 Polycrystalline silicon; Examination method; Vacuum zone-melting on boron
ICS Classification:	77.040.01-Testing of metals in general
Chinese Classification:	H17-Semimetal and semiconductor material analysis method
Professional Classification:	GB-National Standard
Related Keywords:	polycrystalline silicon examination method vacuum zone-melting silicon cores boron scopethis standard applies silicon boron-based polysilicon rods
Related Topics:	Polycrystalline m2 polycrystalline Check polyol multi-station vacuum Crystal form detection method boron detection method Silicon Wafer Inspection Method boron detection method Crystallization detection method How to test single crystal base method boron detection method Crystallization detection method How to detect single crystal silicon primary crystal region How to detect vacuum Boron Multi-directional Twin detection method Vacuum packaging vacuum inspection Vacuum silicon How to detect vacuum silicon vacuum How much vacuum Vacuum degree detection method Vacuum test Vacuum test boron detection method GBT4060 GB/T 4060-1983 GB/T 4060-2007 GB/T 4060-2018 vacuum eutectic The difference between vacuum value and vacuum degree The difference between QG inspection methods How to determine single crystal and polycrystalline Vacuum machine inspection standards Inspection methods for metal single crystals and polycrystals Titanium silicon inspection Polycrystalline Polycrystalline silicon powder Crystalline silicon detection method Negative pressure vacuum detection method follows Boron anhydride detection method How boron radicals are produced Crystal water detection method How to distinguish single crystals from polycrystalline

《GB/T 4060-2007硅多晶真空区熔基硼检验方法》由610（中国有色金属工业协会）归口，主管部门为中国有色金属工业协会。
本标准适用于多晶硅沉积在硅芯上生长的多晶硅棒基硼的试验。

Scope

This standard applies to the inspection of boron-based polysilicon rods grown on polysilicon deposited on silicon cores. This standard detects the effective range of impurity concentration: 0.002×10～100×10.

More samples: GB 50021-2001(2009) JGJ 94-2008 QC/T 942-2021

Sample only — not a preview of GB/T 4060-2007

Loading PDF document...

Error loading PDF. Please make sure the file is valid and try again.