GB/T 6495.4-1996 in English
SUPERSEDEDProcedures for temperature and irradiance corrections to measured I-Vcharacteristics of crystalline silicon photovoltaic devices
- Issued on:1996-07-09
- Implemented on:1997-01-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
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《GB/T 6495.4-1996晶体硅光伏器件的I-V实测特性的温度和辐照度修正方法》由TC90(全国太阳光伏能源系统标准化技术委员会)归口,主管部门为工业和信息化部(电子)。
本标准规定了作温度和辐照度修正应遵循的方法,仅适用于修正晶体硅光伏器件的实测I―V特性。本标准规定了晶体硅光伏器件的I―V实测特性的温度和辐照度修正方法,包括测定温度系数、内部串联电阻和曲线修正系数。这些方法在测试所用辐照度的±30%范围内都能适用。
Scope
This standard specifies the temperature and irradiance correction methods for IV measured characteristics of crystalline silicon photovoltaic devices, including the determination of temperature coefficient, internal series resistance and curve correction coefficient. These methods are applicable within ±30% of the irradiance used for testing. NOTE 1 These methods are only applicable to linear devices. 2 Photovoltaic devices include single solar cells, solar cell combinations or flat-panel components. Various data apply to various devices. Although the temperature coefficient of a component (or battery combination) can be calculated by measuring a single battery, it should be noted that the internal series resistance and curve correction coefficient of the component or battery combination should be measured separately. 3 The term "sample" is used to denote any of these devices.

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