SJ/T 11225-2000 in English

VALID

Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor

Issued on:2000-08-16
Implemented on:2000-10-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $160.00
$156.00

Standard No:	SJ/T 11225-2000
Document status:	VALID
Title in English:	Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor
Title in Chinese:	电子元器件详细规范 3DA504型S波段硅脉冲功率晶体管
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2000-08-16
Implemented on:	2000-10-01
ICS Classification:	31.080.30-Transistors
Chinese Classification:	L42-Semiconductor triode
Professional Classification:	SJ-Electronics
Related Keywords:	pulse power transistor detail specification electronic components s band silicon specification
Related Topics:	band sj/t11228-2000 sj/t+11228-2000 pulse band Functionality of new electronic devices Pulse power Ultra Low Power Electronics Electronic Component sj/t11223-2000

本规范适用于3DA504型波段脉冲功率晶体管，它是按照GB/T 7576-1998《半导体器件分立器件第7部分双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范》标准制订的，符合GB/T 4589.1-1989《半导体器件分立器件和集成电路总规范》和GB/T 12560-1999《半导体器件分立器件分规范》的II类要求。本规范引用的标准有GB/T 4587-1994《半导体分立器件和集成电路第7部分双极型晶体管》、GB/T 4589.1-1989《半导体器件分立器件和集成电路总规范》、GB/T 4937-1995《半导体器件机械和气候试验方法》和GJB 128A-97《半导体器件试验方法》。

More samples: JC/T 2453-2018 DL/T 368-2010 JJG 21-2008

Sample only — not a preview of SJ/T 11225-2000

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