T/CIE 148-2022 in English
VALIDResistive memory cell electrical parameter test sepcification
- Issued on:2022-12-31
- Implemented on:-
- File Format:PDF
- Delivery:Via email within 1~3 business days
Price(USD)：
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$156.00
$156.00
| Standard No: | T/CIE 148-2022 |
| Document status: | VALID |
| Title in English: | Resistive memory cell electrical parameter test sepcification |
| Title in Chinese: | 阻变存储单元电学测试规范 |
| Language: | English |
| File Format: | Electronic (PDF) |
| Delivery: | Via email within 1~3 business days |
| Issued on: | 2022-12-31 |
| ICS Classification: | 31.200-Integrated circuits. Microelectronics |
| Chinese Classification: | L05-Reliability and maintainability |
| Professional Classification: | T/-Social Organization Standard |
| Related Keywords: | resistive memory cell
resistive random access memory electrical parameter test sepcification introductionthis standard electrical testing requirements test results |
| Related Topics: | Lantern Festival storage temperature
Dual Cell Electrochemistry Cell Electrochemistry Resistance Test Unit Resistive change Electrochemical test resistance Temperature storage test RC storage Variable Resistor Storage International t/jsqa 148-2022 Resistive strain testing Optical component storage |
Introduction
This standard specifies the electrical testing requirements for resistive random access memory (ReRAM) cells. It outlines detailed procedures and criteria for assessing the performance of ReRAM devices, focusing on parameters such as resistance switching characteristics, endurance, retention time, and variability. The document aims to provide a uniform methodology for evaluating these storage units, ensuring consistency in test results across different laboratories and manufacturers.
*** Please note: This description may not be accurate, please refer to the official documentation.
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