GB/T 26070-2010 in English

VALID

Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method

Issued on:2011-01-10
Implemented on:2011-10-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $240.00
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Standard No:	GB/T 26070-2010
Document status:	VALID
Title in English:	Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Title in Chinese:	化合物半导体抛光晶片亚表面损伤的反射差分谱测试方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2011-01-10
Implemented on:	2011-10-01
ICS Classification:	77.040.99-Other methods of testing of metals
Chinese Classification:	H17-Semimetal and semiconductor material analysis method
Professional Classification:	GB-National Standard
Related Keywords:	polished compound semiconductor wafers subsurface damage iii-v compound semiconductor reflectance difference spectroscopy method scopethis standard other compound semiconductor
Related Topics:	reflectance spectrum difference difference spectrum Compound semiconductor spectrum measurement reflectance spectrum difference+ Spectral reflector Spectrum test strip single crystal surface spectral reflectance method Semiconductor reflectance spectroscopy Zirconium compound semiconductor spectral reflectance Spectrum Representation method of spectrum Spectrum test method Spectrum GBT26070 GB/T 26070-2010 Semiconductor polishing materials Preparation method of compound semiconductor Compound semiconductor raw material extraction method Spectral reflectance characteristics test

《GB/T 26070-2010化合物半导体抛光晶片亚表面损伤的反射差分谱测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。

Scope

This standard specifies the test method for subsurface damage of III-V compound semiconductor single crystal polished wafers. This standard is applicable to the measurement of subsurface damage of GaAs, InP (GaP, GaSb can refer to) and other compound semiconductor single crystal polished wafers.

More samples: NB/T 47013.2-2015 DL/T 368-2010 JJG 21-2008

Sample only — not a preview of GB/T 26070-2010