Zirconium compound semiconductor

Zirconium compound semiconductor, Total:313 items.

The international standard classification for "Zirconium compound semiconductor" includes: Powder metallurgy , Aluminium products , Semiconducting materials , Other non-ferrous metals and their alloys , Electronic components in general , Software development and system documentation , Semiconductor devices , Other methods of testing of metals , Other products of non-ferrous metals , Cosmetics. Toiletries , Non-metalliferous minerals , Workplace atmospheres , Electromechanical components in general .

The Chinese standard classification for "Zirconium compound semiconductor" includes: Metal and alloy powder , Light metals and their alloys , Rare refractory metals and their compounds , Reliability and maintainability , Software engineering , Microcircuit in general , Sensitive component and sensor , Semimetal and semiconductor material analysis method , Precious metals and their alloys , Semimetal , Technical Management , Technical management , Technical management , Technical management , Cosmetics , Artificial lens , Labor sanitation , Power semiconductor device and parts .

Professional Standard - Non-ferrous Metal

YS/T 568.1-2008 Chemical analysis methods for zirconium oxide and hafnium oxide-Determination of zirconium oxide and hafnium oxide total content-Mandelic acid gravimetric method
YS/T 543-2006 Fine aluminum-1% silicon wire for semiconductor lend-bonding
YS/T 641-2007 Aluminium wire for semiconductor lead bonding
YS/T 678-2008 Copper wire for semiconductor lead bonding
YS/T 752-2011 Composite zirconia powder

Group Standards of the People's Republic of China

T/ZZB Q041-2022 Mixed signal semiconductor device test equipment
T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/SCS 000015-2023 Rietveld Whole Pattern Fitting Method for the Quantitative Phase Analysis of Zirconia Solid Electrolyte
T/CECA 35-2019 Metal oxide semiconductor gas sensor
T/CMIF 137-2021 Silver-gold alloy wire for semiconductor packaging bonding
T/CIE 144-2022 Reliability enhancement test of semiconductor devices
T/ZACA 041-2022 Mixed signal semiconductor device test equipment
T/ZZB 1718-2020 Gold bonding wire for semiconductor package
T/CEPEA 0102-2023 Electrostatic chuck for etching process of compound semiconductor devices
T/CIECCPA 007-2024 Semiconductor Industry Nitrogen Oxide Emission Requirements

工业和信息化部

YS/T 543-2015 Standard specification for fine aluminum-1% silicon wire for semiconductor lead-bonding
YS/T 1449-2021 Nickel cobalt manganese zirconium composite hydroxide
XB/T 518-2021 Cerium-zirconium composite oxide
YS/T 1523-2022 Nickel cobalt aluminum zirconium composite hydroxide
SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors
YS/T 1105-2016 Silver bonding wire for semiconductor package

国家市场监督管理总局、中国国家标准化管理委员会

GB/T 36646-2018 Software component management—Management information model
GB/T 15879.4-2019 Mechanical standardization of semiconductor devices—Part 4:Coding system and classification into forms of package outlines for semiconductor device packages
GB/T 38913-2020 Test methods for hydride orientation fraction of nuclear grade zirconium and zirconium alloy tubes

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 8646-1998 Fine aluminum-1% silicon wire for semiconductor lend-bonding
GB/T 8750-2007 Gold bonding wire for semiconductor devices
GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
GB/T 8750-2014 Gold bonding wire for semiconductor package
GB/T 26070-2010 Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
GB/T 13747.27-2020 Methods for chemical analysis of zirconium and zirconium alloys—Part 27：Determination of trace impurities content—Inductively coupled plasma mass spectrometry
GB/T 8750-2022 Gold-based bonding wire and bandlet for semiconductor package
GB/T 8750-1997 Gold wire for semiconductor devices lead bonding

Professional Standard - Electron

SJ 20079-1992 Test methods for gas sensors of metal-oxide semiconductor
SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
SJ 2218-1982 Semiconductor photocouplers in the diode mode
SJ 20072-1992 Semiconductor discrete device-Detail specification for semiconductor opto-couplers for Type GH24,GH25 and GH26
SJ 2219-1982 Semiconductor photocouplers in the transistor mode
SJ 50033/3-1994 Semiconductor discrete device - Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes
SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor
SJ/Z 9021.1-1987 Mechanical standardization of semiconductor devices - Part 1: Preparation of drawings of semiconductor devices
SJ/T 10424-1993 Glass powder for passivation packaging for use in semiconductor devices
SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
SJ/Z 9021.2-1987 Mechanical standardization of semiconductor devices--Part 2:Dimensions
SJ 2220-1982 Semiconductor photocouplers in the Darlington transistor mode
SJ/Z 9021.4-1987 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor devices
SJ 20026-1992 Measuring methods for gas sensors of metal oxide semiconductor

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

GB/T 35893-2018 Determination of aluminium zirconium chloride hydroxide complexes, aluminium zirconium chloride hydroxide glycine complexes and aluminum chlorohydrate as antiperspirant active ingredients in cosmetics
GB/T 13747.20-2017 Methods for chemical analysis of zirconium and zirconium alloys - Part 20: Determination of hafnium content - Inductively coupled plasma atomic emission spectrometry
GB/T 13747.21-2017 Methods for chemical analysis of zirconium and zirconium alloys - Part 21: Determination of hydrogen content - Inert gas fusion-infrared absorption or thermal conductivity method
GB/T 13747.22-2017 Methods for chemical analysis of zirconium and zirconium alloys - Part 22: Determination of oxygen and nitrogen contents - Inert gas fusion-infrared absorption and thermal conductivity method

Professional Standard - Building Materials

JC/T 817-2014 Gem grade synthetic cubic zirconia crystals

Military Standard of the People's Republic of China-General Armament Department

GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler

Taiwan Provincial Standard of the People's Republic of China

CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage

Occupational Health Standard of the People's Republic of China

GBZ/T 160.26-2004 Methods for determination of zirconium and its compounds in the air of workplace

未注明发布机构

DIN EN 60191-6-16 E:2013-08 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA

Jiangsu Provincial Standard of the People's Republic of China

DB32/ 3747-2020 Pollutant Emission Standards for the Semiconductor Industry

Anhui Provincial Standard of the People's Republic of China

DB34/ 4294-2022 Discharge Standards for Water Pollutants in the Semiconductor Industry

Professional Standard - Machinery

JB/T 5835-2005 Components of gate terminal for power semiconductor devices
JB/T 5835-1991 Gate assemblies for power semiconductor devices

机械电子工业部

JB 5835-1991 Gate assembly for power semiconductor devices

Professional Standard - Civil Aviation

MH/T 6067-2010 Standard test method for stress crazing of acrylic plastics in contact with liquid or semi-liquid compounds

European Committee for Electrotechnical Standardization（CENELEC）

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA

British Standards Institution (BSI)

BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
PD IEC TR 63378-1:2021 Thermal standardization on semiconductor packages. Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
BS 3934-1:1992 Mechanical standardization of semiconductor devices - Recommendations for the preparation of drawings of semiconductor devices
BS IEC 60748-11:1991 Semiconductor devices. Integrated circuits. Sectional specification for semiconductor integrated circuits excluding hybrid circuits
BS IEC 60748-11:2000 Semiconductor devices - Integrated circuits - Sectional specification for semiconductor integrated circuits excluding hybrid circuits
BS IEC 60191-2:1966+A21:2020 Mechanical standardization of semiconductor devices. Dimensions
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
21/30432536 DC BS EN IEC 63364-1. Semiconductor devices. Semiconductor devices for IOT system. Part 1. Test method of sound variation detection
BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
BS EN 62779-1:2016 Semiconductor devices. Semiconductor interface for human body communication. General requirements
BS EN 60191-4:2014 Mechanical standardization of semiconductor devices. Coding system and classification into forms of package outlines for semiconductor device packages
BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
BS EN 60191-6:2004 Mechanical standardization of semiconductor devices-Part 6:General rules for the preparation of outline drawings of surface mounted semiconductor device packages
BS EN 60191-6:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
BS EN 60191-6:2009 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages
BS ISO 6474-2:2019 Implants for surgery. Ceramic materials. Composite materials based on a high-purity alumina matrix with zirconia reinforcement
BS IEC 60191-2:1966+A18:2011 Mechanical standardization of semiconductor devices. Dimensions
BS IEC 62779-4:2020 Semiconductor devices. Semiconductor interface for human body communication - Capsule endoscope
BS EN 60191-6:2005 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages
17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
BS EN 60191-4:2014+A1:2018 Mechanical standardization of semiconductor devices - Coding system and classification into forms of package outlines for semiconductor device packages
18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
BS EN 62779-2:2016 Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BS ISO 17299-5:2014 Textiles. Determination of deodorant property. Metal-oxide semiconductor sensor method
BS IEC 62951-4:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
18/30363340 DC BS IEC 62779-4. Semiconductor devices. Semiconductor interface for human body communication. Part 4. Semiconductor interface for capsule endoscopy using human body communication
13/30264600 DC BS EN 60747-14-8. Semiconductor devices. Part 14-8. Semiconductor sensors. Capacitive degradation sensor of liquid
20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
13/30284029 DC BS EN 60191-6-16. Mechanical standardization of semiconductor devices. Part 6-16. Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
BS EN 62418:2010 Semiconductor devices. Metallization stress void test
BS IEC 60747-18-2:2020 Semiconductor devices. Semiconductor bio sensors. Evaluation process of lens-free CMOS photonic array sensor package modules
BS EN 62779-3:2016 Semiconductor devices. Semiconductor interface for human body communication. Functional type and its operational conditions

German Institute for Standardization

DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 60191-6-16:2007-11 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007 / Note: To be replaced by DIN EN 60191-6-16 (2013-...
DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
DIN EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007

Defense Logistics Agency

DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
DLA SMD-5962-94532-1994 MICROCIRCUIT, CMOS, 64-BIT MICROPROCESSOR
DLA SMD-5962-77044 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, NOR GATES, MONOLITHIC SILICON
DLA SMD-5962-77027 REV C-1982 MICROCIRCUITS, DIGITAL, CMOS, HEX INVERTER, MONOLITHIC SILICON
DLA SMD-5962-77053 REV M-2005 MICROCIRCUIT, CMOS, QUAD ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-95595 REV N-2004 MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 32-BIT
DLA SMD-5962-93187 REV L-2007 MICROCIRCUIT, HYBRID, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 32-BIT
DLA SMD-5962-77034 REV X-2006 MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
DLA SMD-5962-93156 REV B-2000 MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 128K X 8-BIT
DLA SMD-5962-84069 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON
DLA SMD-5962-77037 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-84043 REV E-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, EXCLUSIVE NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-94745-1995 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1-BIT SERIAL CONFIGURATION PROM, MONOLITHIC SILICON
DLA SMD-5962-77023 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL BINARY UP-COUNTER, MONOLITHIC SILICON
DLA SMD-5962-87686 REV D-1999 MICROCIRCUIT, DIGITAL, CMOS, 16 X 16 MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-78029 REV H-2005 MICROCIRCUIT, DIGITAL, CMOS, ENCODER- DECODER, MONOLITHIC SILICON
DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS, DIGITAL, CMOS, QUAD D LATCH, MONOLITHIC SILICON
DLA SMD-5962-94533-1994 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-94611 REV R-2004 MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, 512K X 32-BIT, STATIC RANDOM ACCESS MEMORY, CMOS
DLA MIL-PRF-19500 N-2005 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
DLA SMD-5962-91501 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT INTEGRATED MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-89877 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, RS232, TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-79013 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-89726 REV D-2006 MICROCIRCUIT, DIGITAL, CMOS, I/O EXPANDED MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-93228 REV B-2005 MICROCIRCUIT, DIGITAL, CMOS, TEST BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-77036 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77051 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77060 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
DLA SMD-5962-93157 REV G-2002 MICROCIRCUIT, MEMORY, HYBRID AND MONOLITHIC, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 256K X 8-BIT
DLA SMD-5962-79012 REV A-1986 MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON
DLA SMD-5962-89711 REV B-2006 MICROCIRCUIT, DIGITAL, CMOS 64-BIT OUTPUT CORRELATOR, MONOLITHIC SILICON
DLA SMD-5962-94642-1994 MICROCIRCUIT, DIGITAL, CMOS, ENHANCED MULTI-FUNCTIONAL PERIPHERAL, MONOLITHIC SILICON
DLA SMD-5962-90526 REV M-2004 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-90657 REV A-2006 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL SERIAL CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-90678 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT, MICROPROCESSOR, MONOLITHIC SILICON

Japanese Industrial Standards Committee (JISC)

JIS K 8210:1986 Zirconium chloride oxide octahydrate (zirconium oxychloride)
JIS H 1650:1988 General rules for chemical analysis of zirconium and zirconium alloys
JIS C 7040:1969 General rules for mechanical standardization of semiconductor integrated circuits

Danish Standards Foundation

DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
DS/EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
DS/IEC 748-11/A1,2:2001 Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits
DS/EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
DS/EN 60191-4/A2:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
DS/EN 60191-4:2001 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages

ES-UNE

UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
UNE-EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (Endorsed by Asociación Española de Normalización in March of 2023.)
UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 60191-6-16:2007 Mechanical standardization of semiconductor devices -- Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007). (Endorsed by AENOR in October of 2007.)

SCC

DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
AS C379.1:1970 Mechanical standardization of semiconductor devices - Preparation of drawings of semiconductor devices
BS PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
BS PD IEC TR 63378-1:2021 Thermal standardization on semiconductor packages-Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
CEI EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IoT system Part 1: Test method of sound variation detection
DANSK DS/EN IEC 63364-1:2023 Semiconductor devices – Semiconductor devices for IoT system – Part 1: Test method of sound variation detection
BS IEC 60191-2:1966+A20:2018 Mechanical standardization of semiconductor devices-Dimensions
BS IEC 60191-2:1966 Mechanical standardization of semiconductor devices. Dimensions
BS IEC 60191-2:1966+A19:2012 Mechanical standardization of semiconductor devices. Dimensions
AS C379.2:1970 Mechanical standardization of semiconductor devices - Dimensions
AS 3708.2:1989 Mechanical standardization of semiconductor devices - Dimensions
DANSK DS/EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
DANSK DS/IEC 63275-2:2022 Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
CEI EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
CEI EN 60191-6-16:2008 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
BS 3934-4:1992 Mechanical standardization of semiconductor devices-Recommendations for a coding system and classification into forms of package outlines for semiconductor devices
IEC 60191-1B:1970 Mechanical standardization of semiconductor devices - Part 1: Preparation of drawings of semiconductor devices - Second supplement
BS 3934-6:1992 Mechanical standardization of semiconductor devices-Specification for the preparation of outline drawings of surface mounted semiconductor device packages
DANSK DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
BS EN 60191-4:2000 Mechanical standardization of semiconductor devices-Coding system and classification into forms of package outlines for semiconductor device packages
AS 1660.2.2:1993 Test methods for electric cables, cords and conductors, Method 2.2: Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods specific to elastomeric and XLPE compounds
DIN EN IEC 63364-1 E:2023 Draft Document - Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (IEC 47/2742/CDV:2021); German and English version prEN IEC 63364-1:2021
BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
AS 3708.1:1989 Mechanical standardization of semiconductor devices - Preparation of drawings
IEC 60149-4:1987 Mechanical standardization of semiconductor devices - Part 4: Coding system and classificatioin into forms of package outlines for semiconductor devices
BS 3934-5:1992 Mechanical standardization of semiconductor devices-Recommendations for tape automated bonding (TAB) of integrated circuits
05/30132036 DC IEC 60191-6-16. Mechanical standardization of semiconductor devices. Part 6-16. Glossary of semiconductor test and burn-in socket for BGA, LGA, FBGA and FLGA
DANSK DS/EN 62418:2010 Semiconductor devices - Metallization stress void test

Association Francaise de Normalisation

NF EN 62417:2010 Semiconductor Devices – Mobile Ion Testing for Metal Oxide Field Effect Semiconductor Transistors (MOSFETs)
NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
NF EN 62374-1:2011 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for intermetallic layers
NF EN 62373:2006 Bias Temperature Stability Testing for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
NF C96-045:1992 Semiconductors devices. Integrated circuits. Part 11 : sectional specification for semiconducteur integrated circuits excluding hybrid circuits
NF EN 62418:2011 Semiconductor Devices - Testing Cavities Due to Metallization Stresses
NF C96-779-1*NF EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1 : general requirements
NF EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IDO system - Part 1: Acoustic variation detection test method
NF C96-013-4*NF EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
NF EN 60191-4/A1:2018 Mechanical standardization of semiconductor devices - Part 4: coding system and shape classification of package structures for semiconductor devices
NF C96-013-4/A2*NF EN 60191-4/A2:2003 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
NF C96-013-4*NF EN 60191-4:2000 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
NF C80-204*NF EN 62418:2011 Semiconductor devices - Metallization stress void test
NF C96-013-4/A1*NF EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
NF EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: coding system and shape classification of package structures for semiconductor devices

International Electrotechnical Commission (IEC)

IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 63364-1:2022 Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
IEC 60191-1:1966 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC 60191-1C:1974 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices.
IEC 60191-1A:1969 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices.
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
IEC TR 63378-1:2021 Thermal standardization on semiconductor packages - Part 1: Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
IEC 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
IEC 60191-4:2013+AMD1:2018 CSV Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
IEC 60191-4:1987 Mechanical standardization of semiconductor devices. Part 4 : Coding system and classification into forms of package outlines for semiconductor devices
IEC 60191-4:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
IEC 60191-4:2013 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
IEC 60191-4:2018 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
IEC 60191-4:1999 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
IEC 62418:2010 Semiconductor devices - Metallization stress void test
IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

Lithuanian Standards Office

LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
LST EN 60191-6-16-2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007)

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE 641-1987 STANDARD DEFINITIONS AND CHARACTERIZATION OF METAL NITRIDE OXIDE SEMICONDUCTOR ARRAYS

Institute of Electrical and Electronics Engineers (IEEE)

ANSI/IEEE Std 641-1987 IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

CZ-CSN

CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices

GM North America

GM GM6078M-1989 Solid Film Lubricant Coatings Resin Bonded MOS2 and PTFE

ESD - ESD ASSOCIATION

EP118-2007 Physics of Semiconductor Devices

IEC - International Electrotechnical Commission

IEC TR 63133:2017 Semiconductor devices - Scan based ageing level estimation for semiconductor devices (Edition 1.0)

ESDU - Engineering Sciences Data Unit

ESDU 83015-1983 Thermal conductivity of liquid heterocyclic nitrogen compounds
ESDU 83015 A-2005 Thermal conductivity of liquids: Heterocyclic nitrogen compounds.
ESDU 00050-2001 Thermal conductivity of liquids: Aromatic compounds containing nitrogen.
ESDU 02002 A-2005 Thermal conductivity of liquids: Aromatic compounds containing oxygen.
ESDU 88004-1988 Thermal conductivity of liquid mixtures
ESDU 88004 A-2005 Thermal conductivity of liquids: Mixtures.

Korean Agency for Technology and Standards (KATS)

KS D 1967-2003 General rules for chemical analysis of zirconium and zirconium alloys
KS D 1967-2019 General rules for chemical analysis of zirconium and zirconium alloys
KS M 1993-4-2022 Determination of emissive organic compounds in solid and/or semi-solid products — Part 4: Volatile organic compounds and carbonyl compounds — Bag method
KS C IEC 60748-11:2004 Semiconductor devices－Integrated circuits－Part 11：Sectional specification for semiconductor integrated circuits excluding hybrid circuits
KS C IEC 60748-11:2020 Semiconductor devices — Integrated circuits — Part 11:Sectional specification for semiconductor integrated circuits excluding hybrid circuits
KS P ISO 13356:2020 Implants for surgery — Ceramic materials based on yttria-stabilized tetragonal zirconia(Y-TZP)

U.S. Military Regulations and Norms

ARMY MIL-M-63530 (1)-1987 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530-1981 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-48646 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
ARMY MIL-M-63530 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-48646-1986 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
ARMY MIL-M-63320 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63324 A VALID NOTICE 1-1988 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63321 A NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-M-63320 A NOTICE 1-1997 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63324 A NOTICE 2-1997 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63320 A-1981 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63324 A-1981 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A (1)-1982 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-I-48634 (3)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48632-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-M-63321 A-1981 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-I-48632 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-I-48634-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48634 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-M-63321 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON

PL-PKN

PN T01305-1992 Semiconductor devices. Integrated circuits. Sectional specificatiion for semiconductor integrated circuits excluding hybrid circuits

PH-BPS

PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IECQ - IEC: Quality Assessment System for Electronic Components

PQC 82-1989 Semiconductors for Use in Electronic Equipment: Sectional Specification: Semiconductor Integrated Circuits Excluding Hybrid Circuits

JP-JEITA

JEITA ED7500A-2-2006 Standard for the dimensions of semiconductor devices (Discrete semiconductor devices)

YU-JUS

JUS N.R1.322-1979 Terms and definitions for semiconductor ?evices. Thyristors

GSO

GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
GSO IEC 60191-6-16:2021 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
BH GSO IEC 60191-6-16:2022 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
OS GSO IEC 62373:2014 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
GSO IEC 62373:2014 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
OS GSO IEC 60748-11:2014 Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits
GSO IEC 63275-1:2024 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
BH GSO ISO 6474-2:2017 Implants for surgery -- Ceramic materials -- Part 2: Composite materials based on a high-purity alumina matrix with zirconia reinforcement
GSO IEC 60191-4:2015 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
GSO ISO 6474-2:2016 Implants for surgery -- Ceramic materials -- Part 2: Composite materials based on a high-purity alumina matrix with zirconia reinforcement
GSO IEC 60748-11:2014 Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits
OS GSO ISO 6474-2:2016 Implants for surgery -- Ceramic materials -- Part 2: Composite materials based on a high-purity alumina matrix with zirconia reinforcement
OS GSO IEC 60191-2:2014 Mechanical standardization of semiconductor devices - Part 2: Dimensions
BH GSO IEC 62418:2022 Semiconductor devices - Metallization stress void test
GSO IEC 62779-1:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements

Insulated Cable Engineers Association （ICEA)

ICEA T-25-425-2015 GUIDE FOR ESTABLISHING STABILITY OF VOLUME RESISTIVITY FOR SEMICONDUCTING POLYMERIC COMPONENTS OF POWER CALBES

ICEA - Insulated Cable Engineers Association Inc.

T-25-425-2015-2015 GUIDE FOR ESTABLISHING STABILITY OF VOLUME RESISTIVITY FOR SEMICONDUCTING POLYMERIC COMPONENTS OF POWER CALBES

NEMA - National Electrical Manufacturers Association

NEMA RI 6-1959 ELECTROCHEMICAL PROCESSING SEMICONDUCTOR RECTIFIER EQUIPMENT

American Society for Testing and Materials (ASTM)

ASTM F72-17e1 Standard Specification for Gold Wire for Semiconductor Lead Bonding
ASTM F72-95 Standard Specification for Gold Wire for Semiconductor Lead Bonding
ASTM F72-21 Standard Specification for Gold Wire for Semiconductor Lead Bonding
ASTM F72-17 Standard Specification for Gold Wire for Semiconductor Lead Bonding
ASTM F1211-89(1994)e1 Standard Specification for Semiconductor Device Passivation Opening Layouts
ASTM UOP1025-18 Density of Viscous Liquids and Semi-Solid Hydrocarbons by Nitrogen Displacement

RO-ASRO

STAS 11580/3-1983 Frits and glazes for ceramic OPAQUE FRITS AND GLAZES WITH ZIRCONIUM COMPOUNDS Determination of barium oxide, lead oxide and zirconium oxide
STAS CEI 191-4-1992 Mechanical standardization of semiconductor devices. Part 4: Coding system and classification into forms of package outlines for semiconductor devices

BR-ABNT

ABNT EB-59-1958 Insulated electrical conductor with vulcanized natural rubber compound

Underwriters Laboratories (UL)

UL SUBJECT 546-2008 OUTLINE OF INVESTIGATION FOR CONDUCTOR TERMINATION COMPOUNDS (Issue 1)

KR-KS

KS C IEC 60748-11-2020 Semiconductor devices — Integrated circuits — Part 11:Sectional specification for semiconductor integrated circuits excluding hybrid circuits
KS P ISO 13356-2020 Implants for surgery — Ceramic materials based on yttria-stabilized tetragonal zirconia(Y-TZP)
KS P ISO 6474-2-2021 Implants for surgery — Ceramic materials — Part 2: Composite materials based on a high purity alumina matrix with zirconia reinforcement

AT-OVE/ON

OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)

RU-GOST R

GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle

CENELEC - European Committee for Electrotechnical Standardization

EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Incorporates Amendment A1: 2018)

Others: Zirconium compound semiconductor