GB/T 33657-2017 in English

VALID

Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells

Issued on:2017-05-12
Implemented on:2017-12-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $220.00
$214.00

Standard No:	GB/T 33657-2017
Document status:	VALID
Title in English:	Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells
Title in Chinese:	纳米技术晶圆级纳米尺度相变存储单元电学操作参数测试规范
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2017-05-12
Implemented on:	2017-12-01
ICS Classification:	31.200-Integrated circuits. Microelectronics
Chinese Classification:	L56-Semiconductor integrated circuit
Professional Classification:	GB-National Standard
Related Keywords:	nanoscale phase change memory cells nano-scale phase change memory cells scopethis standard phase change memory materials electrical operating parameter test specification test results
Related Topics:	Nano nanotechnology wafer high-density nanophase electricity Nanoscale relative crystallinity Nanohardness a nanometer Nano Manipulator five nanometer storage nano twins Nanogold storage Nanocrystalline titanium foil nano dendrite nano work single strand nano single strand nano phase change memory How to test the performance of nanocrystals nano memory device five nanometer memory structural phase transition class wafer nano twins nanoscale nanoscale wafer level phase change memory Nano manipulation Nano manipulation operating parameters First-order phase transition Second-order phase transition How the Nanoscale Is Measured Sub-ten nanometer scale nanophase transition nanocrystalline conjugated Nanohardness First-order phase transition Second-order phase transition "nanotechnology nanocrystalline core GBT33657 GB/T 33657-2017 Nanotechnology Dimensional Measurement Nano electrospinning Nanocrystalline products Wafer test Specifications for nano spray paint

《GB/T 33657-2017纳米技术晶圆级纳米尺度相变存储单元电学操作参数测试规范》由TC279（全国纳米技术标准化技术委员会）归口，主管部门为中国科学院。

Scope

This standard specifies the wafer testing specifications for the read and write control parameters of nanoscale phase change memory cells. The test results can be used to characterize the electrical operability of phase change memory materials or devices.

More samples: GB 18306-2015 JGJ 94-2008 QC/T 942-2021

Sample only — not a preview of GB/T 33657-2017

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