GB/T 42271-2022 in English

GB/T42271-2022 Standard Overview

GB/T42271-2022 "Non-contact Test Method for Resistivity of Semi-insulating Silicon Carbide Single Crystal" was officially implemented on April 1, 2023. The standard specifies the method for measuring the resistivity of semi-insulating silicon carbide single crystals using the principle of capacitor charging and discharging, which is applicable to samples with a resistivity range of 1×10⁵Ω·cm to 1×10¹²Ω·cm.

Background of Standard Formulation

With the widespread application of silicon carbide in semiconductor devices, the demand for its performance testing is growing. Traditional contact test methods have problems such as electrode contamination and damage, while non-contact test technology has become an industry hotspot due to its non-destructive measurement characteristics. The resistivity test of semi-insulating silicon carbide single crystal materials is crucial to the evaluation of device performance, so the formulation of this standard fills the gap in related fields.

Test principle and method

Steps	Description	Key parameters
Calibration	Use GaAs standard to calibrate the equipment	Activation energy: 0.75V
Sample preparation	Ensure the sample surface is clean and the thickness is uniform	Test area: 10mm×10mm
Test process	Real-time monitoring of the discharge process through the capacitive probe device	Resistivity calculation formula: ρ = No vibration: Use a stepper motor to control the movement of the probe No electromagnetic interference: The equipment is well grounded Environmental requirements: Temperature: 23±3℃, Humidity: 60%±20% Interference factors: Influence of light intensity: The light shield of the equipment needs to be closed during testing Static electricity and vibration shielding measures Requirements for sample surface cleanliness: Ra is less than 10μm Implementation Suggestions To ensure the accuracy of the test results, it is recommended to: Strictly select the test point distribution according to the standard requirements (refer to Table 1) Regularly calibrate the digital oscilloscope and probe device Establish a complete test environment monitoring system, including temperature and humidity control and electromagnetic shielding Comparative Analysis of Standard Frameworks Dimensions GB/T42271-2022 International Similar Standards Test Principle Capacitor Charge and Discharge Method Similar method, but with slightly different parameters Scope of application 1×10⁵Ω·cm to 1×10¹²Ω·cm Mainly for 6-8 inch wafers Equipment requirements Includes probe device and digital oscilloscope Professional test system required More samples: JGJ 94-2008 JJG 21-2008 GB 18306-2015 Sample only — not a preview of GB/T 42271-2022 Previous Page: 1 / 0 Next Zoom Out 100% Zoom In Search Loading PDF document... Error loading PDF. Please make sure the file is valid and try again. We also recommend GB/T 44558-2024 in English Test method for dislocation imaging in III-nitride semiconductor materials—Transmission electron microscopy 2024-09-29 GB/T 30857-2014 in English Standard test method for thickness and thickness variation on sapphire substrates 2014-07-24 GB/T 1550-2018 in English Test methods for conductivity type of extrinsic semiconducting materials 2018-12-28 GB/T 14146-2021 in English Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method 2021-05-21 GB/T 26068-2018 in English Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method 2018-12-28 GB/T 40279-2021 in English Test method for thickness of films on silicon wafer surface—Optical reflection method 2021-08-20 GB/T 32188-2015 in English The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate 2015-12-10 GB/T 34210-2017 in English Test method for determining the orientation of sapphire single crystal 2017-09-07 GB/T 43894.2-2026 in English Practice for determining semiconductor wafer near-edge geometry—Part 2: Roll-off amount（ROA） 2026-01-28 GB/T 43313-2023 in English Test method for surface quality and micropipe density of polished silicon carbide wafers—Confocal and differential interferometry optics 2023-11-27 Terms of Service Privacy Cancellation & Refund Policy My Account About Us Contact Us All Rights Reserved © 2026 WWW.CHINASTANDARDS.NET