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Database: 365,228(8 Aug 2026)
silicon wafer surface optical reflection method introduction analysis optical reflection method test method silicon dioxide film polycrystalline silicon thin film high molecular weight polyethylene steel skeleton plastic-lined pressure vessels overhead line maintenance
GB/T 40279-2021 in English

GB/T 40279-2021 in English

VALID

Test method for thickness of films on silicon wafer surface—Optical reflection method

  • Issued on:2021-08-20
  • Implemented on:2022-03-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00
Standard No: GB/T 40279-2021
Document status: VALID
Title in English: Test method for thickness of films on silicon wafer surface—Optical reflection method
Title in Chinese: 硅片表面薄膜厚度的测试 光学反射法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2021-08-20
Implemented on: 2022-03-01
ICS Classification: 77.040-Testing of metals
Chinese Classification: H21-Metal physical property test method
Professional Classification: GB-National Standard
Related Keywords: silicon wafer surface optical reflection method introduction analysis
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polycrystalline silicon thin film
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《GB/T 40279-2021硅片表面薄膜厚度的测试 光学反射法》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC2(全国半导体设备和材料标准化技术委员会材料分会)执行,主管部门为国家标准化管理委员会。


Introduction

Analysis of the core content of the standard

This standard specifies the methodology system for testing the thickness of silicon dioxide film and polysilicon film on the surface of silicon wafers using the optical reflection method. The technical principle is based on the Fresnel interference effect: when the incident light is reflected at the upper and lower interfaces of the film, the optical path difference between the two reflected light beams causes interference. The thickness is calculated by analyzing the relationship between the wavelength and the refractive index of the extreme points of the reflection spectrum.


Key Technical Parameters

Test Object Thickness Range(nm) Calibration Deviation Refractive Index Parameter
Silicon Dioxide Thin Film 15-105 ±0.5nm 1.45291-1.46748
Polycrystalline Silicon Thin Film 15-105 ±1.5nm Material Related

Key Points for Test Interference Control

Environmental factors: It is necessary to operate in a laboratory with a cleanliness level of 6 or above (temperature 23±3℃, humidity 30-50%), and avoid strong light/electromagnetic interference. Actual cases show that environmental fluctuations can cause the test deviation to increase by 0.2-0.5nm.

Sample processing: Non-mirror samples need to be polished to a surface roughness of <5nm, such as silicon etching wafers need to be converted to polished wafer substrates. Test data from a certain company shows that the error of unpolished samples can reach 15-20%.


Instrument system configuration

The standard requires that the test system include: deuterium tungsten lamp light source (190-1050nm), spectrometer, fiber optic probe and anti-vibration sample table. Key indicators:

  • Wavelength resolution: ≤1nm
  • Spot diameter: 50-200μm
  • Repeatability error: <0.3%

Implementation suggestions

1. Calibration strategy: Special calibration pieces should be used for different materials/thickness ranges, such as 300nm silicon dioxide film, which requires independent calibration

2. Data processing: It is recommended to use the least squares fitting method to optimize thickness calculation, which is 40% more accurate than manual illustration

3. Abnormal handling: When the fitting curve R² is <0.95, it is necessary to check the sample surface contamination or the optical system alignment

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