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Database: 365,228(8 Aug 2026)

silicon wafer

silicon wafer, Total:80 items.

The international standard classification for "silicon wafer" includes: Semiconducting materials , Testing of metals , Testing of metals in general , Integrated circuits. Microelectronics , Insulating fluids in general , Chemical analysis of metals , Chemical analysis , Glass products .

The Chinese standard classification for "silicon wafer" includes: Semimetal , Elemental semiconductor material , Semimetal and semiconductor material in general , Metal physical property test method , Semimetal and semiconductor material analysis method , Microcircuit in general , Metal nondestructive testing method , Basic standards and general methods , Quartz glass , Power semiconductor device and parts .


Professional Standard - Non-ferrous Metal

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 43315-2023 Test method for flow pattern defects in silicon wafer—Etching technique
  • GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
  • GB/T 19922-2005 Standard test methods for measuring site flatness on silicon wafers by noncontact scanning
  • GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
  • GB/T 28276-2012 Silicon-based MEMS fabrication technology—Specification for dissolved wafer process
  • GB/T 40110-2021 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
  • GB/T 14139-2019 Silicon epitaxial wafers
  • GB/T 14140.2-1993 Silicon slices and wafers-Measuring of diameter-Micrometer method
  • GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell
  • GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
  • GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
  • GB/T 26069-2010 Specification for silicon annealed wafers
  • GB/T 35310-2017 200 mm silicon epitaxial wafer
  • GB/T 32814-2016 Fabrication Technology of Silicon Based MEMS Process Specification Based on SOI Silicon
  • GB/T 19444-2004 Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
  • GB/T 29055-2019 Multicrystalline silicon wafers for photovoltaic solar cell
  • GB/T 32281-2015 Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry
  • GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
  • GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
  • GB/T 14143-1993 300~900μm Silicon slices-Measuring of interstitial oxygen content-Infrared absorption method
  • GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
  • GB/T 6621-2009 Testing methods for surface flatness of silicon slices
  • GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
  • GB/T 14140.1-1993 Silicon slices and wafers--Measuring of diameter--Optical projecting method
  • GB/T 34479-2017 Specification for alphanumeric marking of silicon wafers
  • GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
  • GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method
  • GB/T 30860-2014 Test methods for surface roughness and saw mark of silicon wafers for solar cells
  • GB/T 43885-2024 Silicon carbide epitaxial wafers
  • GB/T 40279-2021 Test method for thickness of films on silicon wafer surface—Optical reflection method
  • GB/T 19444-2025 Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction
  • GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
  • GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers
  • GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
  • GB/T 6619-1995 Test methods for bow of silicon slices
  • GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
  • GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe
  • GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers―Noncontact eddy-current sensor
  • GB/T 42789-2023 Test method for gloss of silicon wafer
  • GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
  • GB/T 30859-2014 Test method for warp and waviness of silicon wafers for solar cells
  • GB/T 32280-2015 Test method for warp of silicon wafers—Automated non-contact scanning method
  • GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
  • GB/T 44334-2024 Silicon epitaxial wafers with buried layers
  • GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
  • GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
  • GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices
  • GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
  • GB/T 6619-2009 Test methods for bow of silicon wafers
  • GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
  • GB/T 14139-2009 Silicon epitaxial wafers
  • GB/T 32279-2015 pecification for order entry format of silicon wafers
  • GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell
  • GB/T 29507-2013 Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning
  • GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy
  • GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography

Group Standards of the People's Republic of China

  • T/CPIA 0038-2022 Electroplated diamond wire for photovoltaic silicon wafer cutting
  • T/ZZB 0594-2018 Electroplated diamond wire for silicon chips
  • T/CPIA 0037-2022 Specifications for Photovoltaic Crystalline Wafers
  • T/CPIA 0022-2020 Evaluation Requirements for Green Factory in Photovoltaic Silicon Wafer Manufacturing Industry
  • T/CPIA 0021-2020 Green Design Product Evaluation Technical Specification for Photovoltaic Silicon Wafers

Hebei Provincial Standard of the People's Republic of China

Shaanxi Provincial Standard of the People's Republic of China

  • DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells

Professional Standard - Ferrous Metallurgy

Professional Standard - Building Materials

Shanghai Provincial Standard of the People's Republic of China

  • DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer

Professional Standard - Electron

  • SJ/T 31096-1994 Requirements of Readiness and Methods of Inspection and Assessment for High-precision Silicon Wafer Grinding Machines
  • SJ 20636-1997 Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC
  • SJ/T 10627-1995 Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
  • SJ/Z 1610-1980 Atlas of Silicon Epiwafer Defects

Inner Mongolia Provincial Standard of the People's Republic of China

  • DB15/T 4004-2025 Greenhouse gas product carbon footprint quantification methods and requirements Photovoltaic silicon wafers

Professional Standard - Machinery

  • JB/T 7061-1993 Silicon Wafers Intended to Be Used in Power Semiconductor Devices

German Institute for Standardization

  • DIN V VDE V 0126-18-2-1:2007 Solar wafers - Part 2-1: Measuring the geometric dimensions of silicon wafers - Wafer thickness
  • DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)

Japanese Industrial Standards Committee (JISC)