GB/T 37051-2018 in English

VALID

Test method for determination of crystal defect density in PV silicon ingot and wafer

Issued on:2018-12-28
Implemented on:2019-04-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $160.00
$156.00

Standard No:	GB/T 37051-2018
Document status:	VALID
Title in English:	Test method for determination of crystal defect density in PV silicon ingot and wafer
Title in Chinese:	太阳能级多晶硅锭、硅片晶体缺陷密度测定方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2018-12-28
Implemented on:	2019-04-01
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	GB-National Standard
Related Keywords:	crystal defect density test method determination method crystal defect density precision requirements repeatability deviation international alignment main innovations test method chemical polishing
Related Topics:	Density determination method Density measurement standard standard silicon wafer m2 polycrystalline crystal silicon wafer crystallization, degree Crystal density Silicon Wafer Inspection Method crystallinity crystal Spectrum of crystalline silicon Wafer Diversity method of producing crystals How much crystallinity Three-chip board machine Polycrystalline and Amorphous Silicon crystallization peak method of making crystals Density is too high Amorphous and Polycrystalline Bismuth Telluride Crystal Defects Amorphous and polycrystalline silicon transistor defect density defect density What is the approximate defect density Polysilicon Ingot Composition Multi-directional Tablets super chip not too dense Silicon Single Wafer Orienter Crystalline silicon material Lamellar crystal structure defect platelet cluster How about solar panels solar grade GBT37051 GB/T 37051-2018 polycrystal analysis Lattice density How to determine single crystal and polycrystalline Characterization methods of lattice defects Crystal defect representation method Solar wafer factory Lattice defect characterization methods Polycrystalline Determination method of crystalline and amorphous Silicon powder for polycrystalline silicon Lens curvature detection method A common way to distinguish crystals from amorphous is Crystallinity test method Polycrystalline silicon atmospheric emissions Polysilicon purity Polycrystalline silicon powder Crystalline silicon detection method Crystal bulk density detection method Single crystal and polycrystalline analysis methods How to distinguish single crystals from polycrystalline Silicon wafer

《GB/T 37051-2018太阳能级多晶硅锭、硅片晶体缺陷密度测定方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。

Introduction

1. Background of standard formulation and analysis of technological evolution

GB/T 37051-2018 is formulated based on the technological development needs in the field of semiconductor equipment and materials, and aims to standardize the determination method of crystal defect density of solar-grade multicrystalline silicon ingots and silicon wafers. The standard is under the jurisdiction of the National Technical Committee for Semiconductor Equipment and Materials Standardization, and was drafted with the joint efforts of many companies.

2. Comparative analysis of standard frameworks

Standard dimensions	GB/T 37051—2018	International alignment	Main innovations
Test method	Chemical polishing and etching solution combined with microscope observation	Aligned with international standards to meet the needs of the photovoltaic industry	Optimized the etching solution ratio (1:4)
Scope of application	Solar-grade multicrystalline silicon ingots and wafers	Conforms to ISO international standard framework	Added a new method for characterizing crystal defect density
Precision requirements	Repeatability deviation is controlled within 5%	Consistent with international precision standards	Introduce statistical analysis methods (GB/T 6379.2-2004)

3. Implementation suggestions

Laboratory condition suggestions:

Equipped with a microscope with electronic image acquisition function (magnification ≥20 times)
Ambient air cleanliness reaches ISO Class 6 or higher
Equipped with an ultrasonic cleaning machine and a container resistant to hydrofluoric acid

Operational process suggestions:

Sample preparation: Select silicon blocks and silicon wafers according to the standard and ensure that the surface treatment meets the requirements
Chemical polishing: carried out in a fume hood, with strict control of time and temperature
Defect observation: using the 9-point average method to ensure the representativeness of the test results

More samples: DL/T 5154-2012 GB 18306-2015 JC/T 2453-2018

Sample only — not a preview of GB/T 37051-2018

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