GB/T 14141-2009 in English

《GB/T 14141-2009硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了用直排四探针测量硅外延层、扩散层和离子注入层薄层电阻的方法。
本标准适用于测量直径大于15.9mm 的由外延、扩散、离子注入到硅片表面上或表面下形成的薄层的平均薄层电阻。硅片基体导电类型与被测薄层相反。适用于测量厚度不小于0.2μm 的薄层,方块电阻的测量范围为10Ω~5000Ω。该方法也可适用于更高或更低阻值方块电阻的测量,但其测量精确度尚未评估。

Scope

This standard specifies the method for measuring the sheet resistance of silicon epitaxial layer, diffusion layer and ion implantation layer with in-line four probes. This standard is applicable to the measurement of the average sheet resistance of a thin layer formed on or under the surface of a silicon wafer by epitaxy, diffusion, or ion implantation with a diameter greater than 15.9 mm. The conductivity type of the silicon substrate is opposite to that of the thin layer to be measured. It is suitable for measuring thin layers with a thickness not less than 0.2μm, and the measurement range of sheet resistance is 10Ω～5000Ω. This method can also be adapted for higher or lower value sheet resistance measurements, but its measurement accuracy has not been evaluated.