GB/T 6617-2009 in English

VALID

Test method for measuring resistivity of silicon wafer using spreading resistance probe

Issued on:2009-10-30
Implemented on:2010-06-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $150.00
$146.00

Standard No:	GB/T 6617-2009
Document status:	VALID
Title in English:	Test method for measuring resistivity of silicon wafer using spreading resistance probe
Title in Chinese:	硅片电阻率测定扩展电阻探针法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2009-10-30
Implemented on:	2010-06-01
Superseding:	GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	GB-National Standard
Related Keywords:	silicon wafer silicon wafers resistance probe scopethis standard test method resistance probes
Related Topics:	Resistivity probe Electron Probe Resolution Electron Probe Resolution probe method Electron Probe Resolution silicon wafer Measuring Probes for Resistivity Electron Probe Sheet Electron Probe Sheet Silicon wafer resistance eddy current method Determination of resistivity in water Probe Impedance Organic Thermoelectric Resistivity Silicon Wafer Resistivity Measurement Detection of resistivity Probe sheet Probe sample Electrode resistivity probe current Probe Rated Current colocalization probe Electrode Powder Resistivity probe method Explore semiconductor probe Automatic Resistivity Tester Probe material Probe material Resistivity sample Probe sheet thickness semiconductor probe electric pair probe probe current metal probe Electrode sheet resistance degree test probe Electrode Impedance Electrode Body Resistivity structure probe electricity rate Electrode sheet resistance test probe sheet light sheet Electron Probe Resolution Expansion resistance Expansion resistance Silicon wafer ion Resistivity measurement range Electrode Impedance+ three probes Probe Sheet Carbon positioning probe GBT6617 GBT6617-1995 GB/T 6617-2009 Resistivity and resistance of silicon wafers Technical Regulations for Resistivity Detection Method Silicon photodetector characteristics Ground resistance meter probe location Principle of four-probe resistance measurement Steps for measuring resistance using the four-probe method Ground resistance test potential probe Probe piece sprayed with carbon ebsd probe pictures Conductive silicone resistance test Apparent resistivity test Four-probe resistance measurement National standard resistivity test Conductivity probe installation method Wire resistivity test Related to resistance probes Cable Resistivity Test Standard four-probe method for measuring resistance Resistivity detection technology Four-probe method for testing resistivity Probe qualitative detection method Battery rate detection method and Four-probe method for measuring resistivity Pole piece resistance test Electron probe preparation method Resistivity method to measure conductivity gb/t 6617 Bed of Nails Test Probes

《GB/T 6617-2009硅片电阻率测定扩展电阻探针法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了硅片电阻率的扩展电阻探针测量方法。
本标准适用于测量晶体晶向与导电类型已知的硅片的电阻率和测量衬底同型或反型的硅片外延层的电阻率,测量范围:10-3 Ω・cm~102 Ω・cm。

Scope

This standard specifies the method for measuring the resistivity of silicon wafers with spreading resistance probes. This standard is suitable for measuring the resistivity of silicon wafers with known crystal orientation and conductivity type and measuring the resistivity of the epitaxial layer of silicon wafers with the same type or inverse type of substrate. Measuring range: 10^-3Ω·cm～ 10² Ω·cm.

More samples: DL/T 368-2010 GB 18306-2015 YD/T 3934-2021

Sample only — not a preview of GB/T 6617-2009

Loading PDF document...

Error loading PDF. Please make sure the file is valid and try again.

We also recommend

GB/T 4058-2009 in English

Test method for detection of oxidation induced defects in polished silicon wafers
2009-10-30
GB/T 26066-2010 in English

Practice for shallow etch pit detection on silicon
2011-01-01
GB/T 6618-2009 in English

Test method for thickness and total thickness variation of silicon slices
2009-10-30
GB/T 24574-2009 in English

Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
2009-10-30
GB/T 8756-2018 in English

Collection of metallographs on defects of germanium crystal
2018-12-28
GB/T 16595-2019 in English

Specification for a universal wafer grid
2019-03-25
GB/T 43612-2023 in English

Collection of metallographs on defects in silicon carbide crystal materials
2023-12-28
GB/T 34479-2017 in English

Specification for alphanumeric marking of silicon wafers
2017-10-14
GB/T 29505-2013 in English

Test method for measuring surface roughness on planar surfaces of silicon wafer
2013-05-09
GB/T 32279-2015 in English

pecification for order entry format of silicon wafers
2015-12-10