GB/T 6618-2009 in English
VALIDTest method for thickness and total thickness variation of silicon slices
- Issued on:2009-10-30
- Implemented on:2010-06-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$175.00
《GB/T 6618-2009硅片厚度和总厚度变化测试方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了硅单晶切割片、研磨片、抛光片和外延片(简称硅片)厚度和总厚度变化的分立式和扫
描式测量方法。
本标准适用于符合GB/T12964、GB/T12965、GB/T14139规定的尺寸的硅片的厚度和总厚度变
化的测量。在测试仪器允许的情况下,本标准也可用于其他规格硅片的厚度和总厚度变化的测量。
Scope
This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon single crystal slices, lapped slices, polished slices and epitaxial wafers (silicon wafers for short). This standard applies to the measurement of the thickness and total thickness variation of silicon wafers conforming to the dimensions specified in GB/T 12964, GB/T 12965, and GB/T 14139. This standard can also be used to measure the thickness and total thickness variation of silicon wafers with other specifications if the test equipment allows it.

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