GB/T 6617-1995 in English

SUPERSEDED

Test method for measuring resistivity of silicon wafers using spreading resistance probe

Issued on:1995-04-18
Implemented on:1995-01-02
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $300.00
$291.00

Standard No:	GB/T 6617-1995
Document status:	SUPERSEDED
Superseded by:	GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
Superseded on:	2010-06-01
Title in English:	Test method for measuring resistivity of silicon wafers using spreading resistance probe
Title in Chinese:	硅片电阻率测定扩展电阻探针法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1995-04-18
Implemented on:	1995-01-02
Chinese Classification:	H21-Metal physical property test method
Professional Classification:	GB-National Standard
Related Keywords:	silicon wafers resistance probe scopethis standard test method silicon epitaxial layers resistance probes
Related Topics:	Resistivity probe Electron Probe Resolution Electron Probe Resolution probe method Electron Probe Resolution silicon wafer Measuring Probes for Resistivity Electron Probe Sheet Electron Probe Sheet Silicon wafer resistance eddy current method Determination of resistivity in water Probe Impedance Organic Thermoelectric Resistivity Silicon Wafer Resistivity Measurement Detection of resistivity Probe sheet Probe sample Electrode resistivity probe current Probe Rated Current colocalization probe Electrode Powder Resistivity Two Probe Tester probe method Explore Automatic Resistivity Tester Resistivity sample Resistor row Probe sheet thickness electric pair probe probe current electrical probe metal probe Electrode sheet resistance degree test probe Electrode Impedance Electrode Body Resistivity structure probe Electrode sheet resistance test probe sheet light sheet Electron Probe Resolution Expansion resistance Expansion resistance Resistivity measurement range Electrode Impedance+ three probes Probe Sheet Carbon positioning probe GBT6617 GBT6617-1995 GB/T 6617-2009 Resistivity and resistance of silicon wafers Technical Regulations for Resistivity Detection Method Silicon photodetector characteristics Ground resistance meter probe location Principle of four-probe resistance measurement Steps for measuring resistance using the four-probe method Ground resistance test potential probe Probe piece sprayed with carbon ebsd probe pictures Conductive silicone resistance test Apparent resistivity test Four-probe resistance measurement National standard resistivity test Conductivity probe installation method Wire resistivity test Related to resistance probes Cable Resistivity Test Standard four-probe method for measuring resistance Resistivity detection technology Four-probe method for testing resistivity Probe qualitative detection method Battery rate detection method and Four-probe method for measuring resistivity Pole piece resistance test Electron probe preparation method Resistivity method to measure conductivity gb/t 6617 Bed of Nails Test Probes

《GB/T 6617-1995硅片电阻率测定扩展电阻探针法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了硅片电阻率的扩展电阻探针测量方法。本标准适用于测量晶体取向与导电类型已知的硅片的电阻率和测量与衬底同型或反型的硅外延层的电阻率。测量范围：10-3~102Ω・cm。

Scope

This standard specifies the method for measuring the resistivity of silicon wafers with spreading resistance probes. This standard is suitable for measuring the resistivity of silicon wafers with known crystal orientation and conductivity type and measuring the resistivity of silicon epitaxial layers of the same type or opposite type as the substrate. Measuring range: 10^-3～10²Ω·cm.

More samples: JJG 21-2008 GB 50021-2001(2009) QC/T 942-2021

Sample only — not a preview of GB/T 6617-1995

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