Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)

silicon transistor

silicon transistor, Total:170 items.

The international standard classification for "silicon transistor" includes: Glass products , Other semiconductor devices , Semiconducting materials , Advanced ceramics .

The Chinese standard classification for "silicon transistor" includes: Industrial technical glass , Field effect device , Semimetal and semiconductor material in general , Technical management , Quartz crystal and piezoelectric element .


General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
  • GB/T 31958-2023 Substrate glass for amorphous silicon thin film transistor liquid crystal display device
  • GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors
  • GB/T 31958-2015 Substrate glass for thin film transistor liquid crystal display device

Professional Standard - Electron

  • SJ 2701-1986 Detail specification for silicon PNP low power transistors,Type 3DX673
  • SJ/T 11976-2025 Neutron transmutation doped float zone silicon single crystal for Insulate Gate Bipolar Transistors(IGBT)
  • SJ 50033.40-1994 Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
  • SJ 2702-1986 Detail specification for silicon NPN high frequency low power transistors,Type 3DG458
  • SJ 2700-1986 Detail specification for silicon NPN high frequency medium power transistors,Type 3DG2060
  • SJ/T 2217-2014 Technical specification for phototransistor of silicon
  • SJ 20514-1995 Specification for silicon epitaxial wafer for microwave power transistor

Hebei Provincial Standard of the People's Republic of China

Professional Standard - Non-ferrous Metal

  • YS/T 1710-2024 Implementation guidance for energy management in polysilicon industry

Group Standards of the People's Republic of China

Professional Standard - Building Materials

Military Standard of the People's Republic of China-General Armament Department

  • GJB 33/10-1989 Detailed specifications for semiconductor discrete devices BT33 type PN silicon single-junction transistor

Defense Logistics Agency

Military Standards (MIL-STD)

RO-ASRO

YU-JUS

  • JUS A.A4.303-1990 Tabular layouts of article characteristics for transistors and thyristors

British Standards Institution (BSI)

American Society for Testing and Materials (ASTM)

  • ASTM F47-94 Crystalline Silicon Crystal Defect Detection Method
  • ASTM F1726-02 Silicon Wafer Crystal Defect Analysis Guide

Association Francaise de Normalisation

  • NF C57-203*NF EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing.