GB/T 1554-2009 in English

VALID

Testing method for crystallographic perfection of silicon by preferential etch techniques

Issued on:2009-10-30
Implemented on:2010-06-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $360.00
$350.00

Standard No:	GB/T 1554-2009
Document status:	VALID
Title in English:	Testing method for crystallographic perfection of silicon by preferential etch techniques
Title in Chinese:	硅晶体完整性化学择优腐蚀检验方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2009-10-30
Implemented on:	2010-06-01
Superseding:	GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	GB-National Standard
Related Keywords:	preferential etch techniques scopethis standard silicon crystals crystallographic perfection silicon techniques
Related Topics:	the crystal High-quality chemical detection integrity Corrosive by Polarization silicon crystal overall experiment method of producing crystals silicon crystal integrity detection method Integrity testing + sterility method of making crystals integrity detection method eutectic properties choose the best Crystal etch instrument Excellent Qing of Chemistry Department Excellent Qing of Chemistry Department Silicon crystal crystal integrity GBT1554 GBT1554-1995 GB/T 1554-2009 Method for Chemical Preferential Etching of Silicon Crystal Integrity The significance of acrosome integrity Advantages and Disadvantages of Biochemical Testing Methodology Nucleic acid integrity detection method Semi-solid testing methods for organic chemical products Cell membrane integrity detection method Linear optimization method for biochemical reagents Electrochemical preparation of amorphous Liquid quality optimization method Analytical method optimization gradient selection Acid electrochemical corrosion Experimental method optimization Inspection methods and scientific content are complete Optimize detection methods Nucleic acid integrity identification methods Nanoliquid phase method optimization Pharmacopoeia method optimization Crystalline silicon detection method Cell membrane integrity detection method Ways to reduce merit-based bias Electrochemical methods for detecting gases ys/t 1554 Crystal Form Methodology Advantages of electrochemical methods The standard for testing the completion of sulfonation is Method validation detection limit is better than What methods are included in the dry chemical method?

《GB/T 1554-2009硅晶体完整性化学择优腐蚀检验方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了用择优腐蚀技术检验硅晶体完整性的方法。
本标准适用于晶向为、或、电阻率为10-3 Ω・cm~104 Ω・cm、位错密度在0cm-2~105cm-2之间的硅单晶锭或硅片中原生缺陷的检验。

Scope

This standard specifies the method for testing the integrity of silicon crystals by preferential etching techniques. This standard applies to primary defects in silicon single crystal ingots or wafers with crystal orientation <111>, <100> or <110>, resistivity 10Ω•m～10Ω•m, and dislocation density between 0cm～10cm inspection. This method is also applicable to silicon single wafers.

More samples: DL/T 5154-2012 QC/T 942-2021 NB/T 47013.2-2015

Sample only — not a preview of GB/T 1554-2009

Loading PDF document...

Error loading PDF. Please make sure the file is valid and try again.

We also recommend

GB/T 34479-2017 in English

Specification for alphanumeric marking of silicon wafers
2017-10-14
GB/T 26066-2010 in English

Practice for shallow etch pit detection on silicon
2011-01-01
GB/T 43612-2023 in English

Collection of metallographs on defects in silicon carbide crystal materials
2023-12-28
GB/T 6617-2009 in English

Test method for measuring resistivity of silicon wafer using spreading resistance probe
2009-10-30
GB/T 16595-2019 in English

Specification for a universal wafer grid
2019-03-25
GB/T 24574-2009 in English

Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
2009-10-30
GB/T 29505-2013 in English

Test method for measuring surface roughness on planar surfaces of silicon wafer
2013-05-09
GB/T 4058-2009 in English

Test method for detection of oxidation induced defects in polished silicon wafers
2009-10-30
GB/T 37051-2018 in English

Test method for determination of crystal defect density in PV silicon ingot and wafer
2018-12-28
GB/T 14844-2018 in English

Designations of semiconductor materials
2018-12-28