GB/T 1554-1995 in English
SUPERSEDEDTest method for crystallographic perfection of silicon by preferential etch techniques
- Issued on:1995-04-18
- Implemented on:1995-12-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
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《GB/T 1554-1995硅晶体完整性化学择优腐蚀检验方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了用择优腐蚀技术检验硅晶体完整性的方法。
Scope
This standard specifies the method for testing the integrity of silicon crystals by preferential etching techniques. This standard applies to crystal orientation <111> or <100>, resistivity 10-3~104Ω·cm, dislocation density between 0~105cm< Inspection of native defects in silicon single crystal ingots or silicon wafers between superscript -2>.
Sample only — not a preview of GB/T 1554-1995

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