method of making crystals

method of making crystals, Total:396 items.

The international standard classification for "method of making crystals" includes: Testing of metals , Semiconducting materials , Optics and optical measurements in general , Piezoelectric and dielectric devices , Optics and optical measurements , Electronic components in general , Optical measuring instruments , Products of the chemical industry in general , Non-metalliferous minerals , Transistors , Recycling , Other standards related to analytical chemistry , Solvents , Chemical analysis of metals , Aromatic hydrocarbons , Non-destructive testing of metals , Electric furnaces .

The Chinese standard classification for "method of making crystals" includes: Metal physical property test method , Semimetal and semiconductor material in general , Material and component for instrument and meter , Quartz crystal and piezoelectric element , Artificial lens , Special electronic technology material , Semimetal and semiconductor material analysis method , Basic standards and general methods for dye , Power semiconductor device and parts , Metal nondestructive testing method , Specifications for pollution control , Electrochemical, thermochemistry and optical profile type analyzer , Metal chemical property test method , Semiconductor discrete devices in general , Coal tar processed products , Industrial electric heating equipment , Mass spectrometer, liquid spectrometer, energy spectrometer and combined devices of them , Broadcasting and television transmission and receiving equipment , Elemental semiconductor material .

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 7896-2008 Test method for optical grade synthetic quartz crystal
GB/T 34612-2017 Measurement method for X-ray double crystal diffraction rocking curve of sapphire crystals
GB/T 11295-1989 The rule of designation for laser crystal rods
GB/T 43752-2024 Recovery and treatment method of crystalline silicon photovoltaic modules—Physical method
GB/T 20724-2006 Method of thickness measurement for thin crystal by convergent beam electron diffraction
GB/T 12634-1990 Test methods for electroelastic contants of piezoelectric crystals
GB/T 17007-1997 Measuring methods for insulated-gate bipolar transistor
GB/T 2385-2007 Dyes intermediates—General method for the determination of crystallizing point
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 11114-1989 Method for detecting dislocations of synthetic quartz using X-ray topographic technique
GB 6430-1986 The rule of type designation for crystal holders (enclosures)
GB 12275-1990 Quartz Crystal Oscillator Model Nomenclature
GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon
GB 12300-1990 Test methods of safe operating area for power transistors
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB　6627-1986 Artificial Quartz Crystal Rod Model Nomenclature
GB 6627-1986 Designation for lumbered synthetic quartz crystal
GB/T 16864-1997 Method for testing cryogenic transmissivity of crystals
GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal
GB/T 14142-1993 method for crystallographic perfection of epitaxial layers in silicon by etching techniques
GB/T 39137-2020 Determination for the orientation of refractory metal single crystal
GB/T 2385-1992 Dye intermediates-General method for the determination of crystallizing point
GB/T 3069.2-2005 Method for the determination of the crystallization temperature of naphthalene
GB/T 16863-1997 Method for testing refractive index of crystals
GB/T 6627-1986 Designation for lumbered synthetic quartz crystal
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 11113-1989 Analytical method for impurities in the synthetic quartz crystal
GB/T 12275-1990 The rule of type designation for quarz crystal oscillators
GB/T 46227-2025 Test method for transmittance of semiconductor single crystal materials
GB/T 42676-2023 Test method for crystalline quality of semiconductive single crystal―X-ray diffraction method
GB/T 15250-1994 Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals
GB/T 3069.2-1986 Method for the determination of the crystallization temperature of naphthalene
GB/T 7896-1987 Testing method for optical; Grade synthetic quartz crystal
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 16822-1997 Test method for dielectric properties of dielectric crystal
GB/T 6430-1986 The rule of type designation for crystal holders (enclosures)
GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 6628-1996 Lumbered synthetic quartz crystal
GB/T 11297.12-2012 Test method for extinction ratio of optical crystal
GB/T 39865-2021 Method for measuring refractive index of uniaxial optical crystals
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 43724-2024 Test method for liquid crystal monomers
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption

Group Standards of the People's Republic of China

T/CEC 536-2021 Sequential testing method for crystalline silicon photovoltaic modules
T/CPIA 0020-2020 Electroluminescence Test Method for Crystalline Silicon Photovoltaic Cells
T/CPIA 0053-2023 Low-temperature snow load test method for crystalline silicon photovoltaic modules
T/CPIA 0009-2019 Electroluminescence Imaging Method for Defect Detection of Crystalline Silicon Photovoltaic Modules
T/SCBDIF 002-2023 LCD panel manufacturing process defect detection method
T/CSTM 00465-2022 Test method of damp heat degradation of crystalline silicon photovoltaic cells
T/CPIA 0099-2024 Boiling water test method for crystalline silicon photovoltaic cells
T/CAB 0180-2022 Measurement method for characteristic parameters of GAGG crystal and crystal array

Professional Standard - Electron

SJ/T 11765-2020 Measurement method of low-frequency noise parameters for transistors
SJ/T 10333-1993 Methods of measurement for uni-junction transistors
SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
SJ/Z 9162-1987 Measuring methods, test methods and standard values of 32KHz quartz crystal elements for wrist watches
SJ 20718-1998 Method of determination trace elements in mercury cadmium telluride crystal
SJ/T 10415-1993 Rapid screening test methods for thermal sensitive parameter of transistor
SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ/T 10015-2013 Measurement and test methods for tuning fork quartz crystal units in the range from 10 kHz to 200 kHz and standard values
SJ/T 10638-1995 Measurement methods for quartz crystal oscillators
SJ 20719-1998 Method of determination X value for mercury cadmium telluride for use in X-ray fluorimetry
SJ/T 10625-1995 Determination method for interstital atomic oxygen content of germanium by infrared abaorption

Professional Standard - Machinery

JB/T 9495.2-1999 Measuring method for refractive index of optical crystals
JB/T 9495.5-1999 Measuring method for scatter graininess of optical crystal
JB/T 9495.6-1999 Measuring method for coefficient of optical absorption of optical crystal
JB/T 9495.4-1999 Measuring method for stress-birefringence of optical crystal
JB/T 9395.3-1999 Measuring method for transmittance of optical crystal
JB/T 9495.7-1999 Measuring method for optical homogeneity of optical crystal
JB/T 10789-2007 High pressure crystal growing funaces-TDR-GY-series high pressure crystal growing furnaces by liquid-encapsulated Czohralski method
JB/T 9395.5-1999 Measuring method for scatter graininess of optical crystal
JB/T 9495.3-1999 Measuring method for transmittance of optical crystal

Professional Standard - Education

JY/T 009-1996 General rules for X-ray polycrystalline diffractometry
JY/T 0588-2020 General rules for crystal and molecular structure determinationof small molecules by single crystal X-ray diffractometer
JY/T 0587-2020 General rules for X-ray polycrystalline diffractometry

Professional Standard - Commodity Inspection

SN/T 1175-2003 Methods for the inspection of thin film transistor color liquid crystal display devices for import and export

National Metrological Technical Specifications of the People's Republic of China

JJF(电子) 20-1982 Verification method of CR1A transistor digital ohmmeter
JJF(电子) 21-1982 Verification Method of JT-l Transistor Characteristic Graphic Instrument

Professional Standard - Railway

TB/T 2699-1996 Test methods for transistor inverters for fluorescent lamps

Taiwan Provincial Standard of the People's Republic of China

CNS 3997-1989 Method of Test for Transistors

Professional Standard - Radio Television Film

GY/T 66-1989 Measurement Method for Transistor Sound Amplifiers Used for Cable Casting

Military Standard of the People's Republic of China-General Armament Department

GJB 9150-2017 Microwave parameter testing method for microwave power transistors

Hebei Provincial Standard of the People's Republic of China

DB13/T 5223-2020 Method for Determination of Voltage Holding Rate of Nematic Thermotropic Liquid Crystal Monomer

Fujian Provincial Standard of the People's Republic of China

DB35/T 1032-2010 Technical requirements and test methods of LCD TV computer all-in-one machine

Professional Standard - Non-ferrous Metal

YS/T 557-2006 Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals

Jiangsu Provincial Standard of the People's Republic of China

DB32/T 3594-2019 Test method for hot spot durability of crystalline silicon solar cells

Japanese Industrial Standards Committee (JISC)

JIS C 7030:1993 Measuring methods for transistors
JIS H 7151:1991 Method of determining the crystallization temperatures of amorphous metals
JIS H 0610:1966 Method of measurement of etch pit density of germanium crystal
JIS G 0552:1977 Methods of ferrite grain size test for steel
JIS H 7805:2005 Method for crystallite size determination in metal catalysts by X-ray diffractometry
JIS G 0551:1977 Methods of austenite grain size test for steel
JIS H 7804:2005 Method for particle size determination in metal catalysts by electron microscope
JIS C 6703:2021 Generic specification and test methods of crystal filters
JIS H 7153:1991 Measuring method for high frequency core loss in amorphous magnetic cores
JIS C 6701:2021 Generic specification and test methods of quartz crystal units
JIS C 8934:1995 Measuring method of output power for amorphous solar cells
JIS C 7051:1974 Testing methods for reverse blocking triode thyristors
JIS B 4130:1998 Diamond/CBN products -- Grain sizes of diamond or cubic boron nitride
JIS C 8935:1995 Measuring method of output power for amorphous solar modules
JIS C 6710:2007 Generic specification of crystal controlled oscillators
JIS C 6710:1999 Generic specification of crystal controlled oscillators
JIS H 0609:1994 Test methods of crystalline defects in silicon by preferential etch techniques
JIS H 0602:1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe
JIS H 0615:2021 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
JIS H 7152:1996 Methods of measurement of the magnetic properties of amorphous metals by means of a single sheet tester
JIS B 4131:1998 Diamond/CBN products -- Diamond or CBN grinding wheels
JIS H 0615:1996 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
JIS C 8913:1998 AMD 1:2005 Measuring method of output power for crystalline solar cells (Amendment 1)
JIS C 8936:1995 Measuring methods of spectral response for amorphous solar cells and modules
JIS B 4138:1998 Diamond/CBN products -- Diamond or CBN segmented saws
JIS C 8917:1998 AMD 1:2005 Environmental and endurance test methods for crystalline solar PV modules (Amendment 1)
JIS H 0609:1999 Test methods of crystalline defects in silicon by preferential etch techniques
JIS C 8935 AMD 1:2005 Measuring method of output power for amorphous solar modules (Amendment 1)

American Society for Testing and Materials (ASTM)

ASTM F47-94 Crystalline Silicon Crystal Defect Detection Method
ASTM F769M-95 Test method for measuring leakage current of transistors and diodes (metric)
ASTM F40-83 Standard Method for PREPARING MONOCRYSTALLINE TEST INGOTS OF SILICON BY THE VERTICAL-PULLING (CZOCHRALSKI) TECHNIQUE
ASTM F847-02 X-ray measurement of crystallographic orientation on single-crystal silicon wafers
ASTM F613-93 Test method for measuring semiconductor wafer diameter
ASTM E82-91(1996) Standard Test Method for Determining the Orientation of a Metal Crystal
ASTM E82-09 Standard Test Method for Determining the Orientation of a Metal Crystal
ASTM E82-91(2007) Standard Test Method for Determining the Orientation of a Metal Crystal
ASTM E82/E82M-14(2019) Standard Test Method for Determining the Orientation of a Metal Crystal
ASTM E82/E82M-14 Standard Test Method for Determining the Orientation of a Metal Crystal
ASTM F26-87a(1999) Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal
ASTM F416-94 Standard Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers
ASTM F850-83(1988) Standard Test Method for Crystallographic Perfection of Gadolinium Gallium Garnet by Preferential Etch Techniques
ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F1723-02 Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F676-97 Standard Test Method for Measuring Unsaturated TTL Sink Current
ASTM F41-90 Method for growing silicon single crystal by floating zone method and evaluating polycrystalline silicon ingot
ASTM F676-97(2003) Standard Test Method for Measuring Unsaturated TTL Sink Current

Korean Agency for Technology and Standards (KATS)

KS C 6024-2002 MEASURING METHODS FOR TRANSISTORS
KS D 0264-1989(2024) Method of measurement of etch pit density of germanium crystal
KS D 0264-2019 Method of measurement of etch pit density of germanium crystal
KS D 0264-1989(2019) Method of measurement of etch pit density of germanium crystal
KS D 0209-1982(1997) DETERMINATION OF FERRITE GRAIN SIZE TEST FOR STEEL
KS D 0209-1982 DETERMINATION OF FERRITE GRAIN SIZE TEST FOR STEEL
KS C 0256-2002(2017) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
KS C IEC 62860-2023 Test methods for the characterization of organic transistors and materials
KS C IEC 62860-2018(2023) Test methods for the characterization of organic transistors and materials
KS C IEC 62860-2018 Test methods for the characterization of organic transistors and materials
KS D 0264-2024 Method of measurement of etch pit density of germanium crystal
KS C IEC 62860:2018 Test methods for the characterization of organic transistors and materials
KS C 8528-2005 Measuring method of output power for crystalline solar cells
KS C 8528-2020 Measuring method of output power for crystalline solar cells
KS C IEC 60679-6-2018(2023) Quartz crystal controlled oscillators of assessed quality — Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators – Application guidelines
KS C IEC 62860-1:2018 Test methods for the Characterization of Organic Transistor-Based Ring Oscillators
KS C IEC 62860-1-2018 Test methods for the Characterization of Organic Transistor-Based Ring Oscillators
KS D 0069-2002(2017) Method of determining the crystallization temperatures of amorphous metals
KS C 8525-2005(2010) Measuring methods of spectral response forcrystalline solar cells
KS D 0069-2022 Method of determining the crystallization temperatures of amorphous metals
KS D 0258-2012(2022) Test methods of crystalline defects in silicon by preferential etch techniques
KS D 0069-2002(2022) Method of determining the crystallization temperatures of amorphous metals
KS C 8526-2005(2020) Measuring method of output power crystalline solar cell modules
KS C 8526-2020 Measuring method of output power crystalline solar cell modules
KS C IEC 60122-2-2003(2018) Crystals for Frequency Control and Selection - Part 2: A Guide to Using Crystals for Frequency Control and Selection
KS C 0256-2002(2022) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
KS C 8526-2005 Measuring method of output power crystalline solar cell modules
KS C 8525-2005 Measuring methods of spectral response forcrystalline solar cells
KS C IEC 62860-1-2023 Test methods for the Characterization of Organic Transistor-Based Ring Oscillators
KS C IEC 62860-1-2018(2023) Test methods for the Characterization of Organic Transistor-Based Ring Oscillators
KS C 8528-1995 Measuring method of output power for crystalline solar cells
KS C 8525-1995 Measuring methods of spectral response for crystalline solar cells
KS D 0258-2022 Test methods of crystalline defects in silicon by preferential etch techniques
KS C 8530-1995 Environmental and endurance test methods for crystalline solar cell modules
KS C 8529-2020 Temperature coefficient measuring methods for crystalline solar cells and modules
KS D 0258-2012 Test methods of crystalline defects in silicon by preferential etch techniques
KS D 0078-2023 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
KS C 8530-2005 Environmental and endurance test methods forcrystalline solar cell modules
KS M ISO 1392:2004 Determination of crystallizing point－General method
KS M ISO 1392-2024 Determination of crystallizing point — General method
KS C 0256-2022 Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
KS M ISO 1392-2019(2024) Determination of crystallizing point — General method

Polski Komitet Normalizacyjny (PKN)

PN T01504 ArkusZ26-1974 Transistors Measurement of base resistance at high frequency rbb
PN T01208-03-1992 Semiconductor devices Bipolar transistors Measuring methods
PN T01504-04-1987 Information processing Artificial intelligence systems Ethical requirements
PN T01505 ArkusZ06-1974 Field Effect Transistors Gate-Drain Current Measurement IGDO
PN T01505-04-1987 Field-effect transistors Measuring method Gate cut-off current Iaso and gate leakage current Igss
PN T01505 ArkusZ11-1974 Field Effect Transistors Drain-Source Breakdown Voltage Measurement U(BR)DSX
PN T01504-09-1987 Information processing Machine learning algorithms Tests
PN T01504-21-1987 Transistors h21E measurement in the low frequency range

Institute of Electrical and Electronics Engineers (IEEE)

IEEE 218-1956 STANDARD METHODS OF TESTING TRANSISTORS
IEEE Std 218-1956(R1980)*56 IRE 28.S2 IEEE Standard Methods of Testing Transistors
IEEE Std 1620-2008 IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials
IEEE/IEC 62860-2013 IEC/IEEE Test methods for the characterization of organic transistors and materials
IEEE Std 1620-2004 Standard for Test Methods for the Characterization of Organic Transistors and Materials
IEEE Unapproved Draft Std P1620/D8 Apr 2008 IEEE Draft Standard for Test Methods for the Characterization of Organic Transistors and Materials
IEEE/IEC 62860-1-2013 IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
IEEE 1620-2008 Test Methods for the Characterization of Organic Transistors and Materials (IEEE Computer Society)

Czech Standards Institute (UNMZ)

CSN 35 8757 Cast.9-1986 Transistors. Methods for measurement of thermal resistance
CSN 35 8757 Cast.11-1986 Transistors. Method for measurement of switching times
CSN 35 8740-1985 Transistors. Moasuring methods of saturation voltage
CSN 35 8757 Cast.3-1984 Transistore. Method of noise figu?e measuring
CSN 35 8759-1977 Semiconductor devices. Transistors. Methods of measurement of switching times
CSN 35 8757 Cast.8-1985 Transistors. Measuring methods of base-emitor voltage
CSN 35 8745-1984 Transistors. Method of feedback circuit time constant measuring
CSN 35 8752-1976 Semiconductor devices. Transistors. Measuring methods for common base output capacitance.
CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods
CSN 35 8757 Cast.10-1986 Transistors. Methods for measurement of output capaclty In common base connection
CSN 35 8755-1970 Transistors. Method of measurernent of the real component oí the short circuit input admittance
CSN 42 0463-1984 Steel. Method for estimating the grain size of austenite on fractures
CSN 65 0311-1981 Method for determination of rystallization temperature
CSN 35 8757 Cast.5-1985 Transistors. Method of measuring collector and emitter barrier layer capacltance

Gosstandart of Russia

GOST 12578-2016 Sugar lump. Method for determination of small lumps (sugar scraps and crystals)
GOST 18604.8-1974 Transistors. Method for measuring output conductivity
GOST 18604.19-1988 Bipolar transistors. Method of measuring threshold voltage
GOST 18604.6-1974 Transistors. Method for measuring emitter reverse current
GOST 18604.4-1974 Transistors. Method for measuring collector reverse current
GOST 5639-1982 Steel and alloys. Methods for detection and determination of grain size
GOST 25734-1983 Alumina. Method for the crystallooptic determination of monocrystals in non metallurgical alumina
GOST 27264-1987 Power bipolar transistors. Measurement methods
GOST R 56980-2016 Crystalline silicon terrestrial photovoltaic modules. Test methods
GOST 18604.7-1974 Transistors. Method for measuring current transfer coefficient
GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 18604.5-1974 Transistors. Method for measuring collector-emitter reverse current
GOST 18604.20-1978 Transistors bipolar. Methods for measuring noise figure at low frequencies
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
GOST 18604.10-1976 Transistors bipolar. Input resistance measurement technique
GOST 18604.26-1985 Bipolar transistors. Methods of time parameters measurement
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 10134.3-1982 Glass inorganic and glass-crystal materials. Method for determination of alkale resistance
GOST 10134.3-2017 Glass and glass products. Methods for determination of chemical resistance. Determination of alkali resistance
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.4-1974 Field-effect transistors. Active output conductance component measurement technique
GOST 18604.2-1980 Transistors bipolar. Methods for measuring of static coefficient of current transmission
GOST IEC 62860-1-2017 Transistors and organic materials. Test methods for determining characteristics
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 18604.23-1980 Bipolar transistors. Method for measuring combination frequencies
GOST 18604.16-1978 Transistors bipolar. Method of measurement of voltage feedback ratio in low signal conditionals
GOST 11067-1985 Inorganic glass and glass-crystal materials. Method for the determination of impact strength
GOST R 71485-2024 Optics and photonics. Optical crystals. Method for determining chemical stability
GOST 20398.9-1980 Field-effect transistors. Forward fransconductance inpulse measurement technique
GOST 18604.1-1980 Transistors bipolar. Method for measuring collector-tobase time constant at high frequencies
GOST IEC 62860-2017 Transistors and organic materials. Test methods for determining characteristics

Yugoslav Association for Standardization

JUS N.R1.450-1981 Bipolar transistors. Measuring methods
JUS N.R1.471-1985 Bipolar transistors. Reference methods of measurement
JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods

British Standards Institution (BSI)

BS 4490:1969 Methods for the determination of the austenitic grain size of steel
BS DD IEC/PAS 60679-6:2008 Quartz crystal controlled oscillators of assessed quality-Phase jitter measurement method for quartz crystal oscillators and SAW oscillators. Application guide
BS IEC 62860:2013 Test methods for the characterization of organic transistors and materials
BS PD IEC TS 62607-6-16:2022 Nanomanufacturing. Key control characteristics-Two-dimensional materials. Carrier concentration: Field effect transistor method
BS 3494-2:1966 Recommendations on semiconductors devices. Methods of measurement of the characteristics of diaode and transistors
BS EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
BS IEC 62860-1:2013 Test methods for the characterization of organic transistor-based ring oscillators
BS 5050:1974 Methods of test for cryolite
BS 5050:1974(2011) Methods of test for Cryolite
08/30191168 DC BS EN 60679-6. Quartz crystal controlled oscillators of assessed quality. Part 6. Phase jitter measurement method for quartz crystal oscillators and SAW oscillators. Application guide

Magyar Szabványügyi Testület

MSZ 8626-1966 Detection method of austenite grain boundaries in steel
MNOSZ 24165-1952 chemical crystalline carbonate

Bureau of Indian Standards

IS 4400-4-1981 Methods of measurements on semiconductor devices: Part 4 Transistors
IS 2853-1964 Methods of determining austenitic grain size in steel
IS 4400 Pt.4-1981 Semiconductor Device Measurement Methods Part IV Transistors
IS 4400 Pt.10-1983 Measurement Methods for Semiconductor Devices Part 10 Field Effect Transistors
IS 5813-1970 How to determine the crystallization point
IS 4400-10-1983 Methods of measurements on semiconductor devices: Part 10 Field effect transistors

German Institute for Standardization

DIN V VDE V 0126-18-3:2007-06 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)
DIN IEC 679-2:1997 Quartz crystal controlled oscillators; Part 2; Guide to the use of quartz crystal controlled oscillators
DIN EN 50513 E:2008 Draft Document - Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing; German version FprEN 50513:2008
DIN EN 60679-6 E:2009-01 Draft Document - Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guide (IEC 49/811/CDV:2008); German version FprEN 60679-6:2008
DIN EN 50513 E:2008-05 Draft Document - Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing; German version FprEN 50513:2008
DIN EN 60679-6 E:2009 Draft Document - Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guide (IEC 49/811/CDV:2008); German version FprEN 60679-6:2008
DIN IEC 60679-2:1997-09 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators (IEC 60679-2:1981)

Association Francaise de Normalisation

NF EN 60679-6:2011 Quality assured crystal driven oscillators - Part 6: Phase jitter measurement method for crystal oscillators and SAW oscillators - Application guidelines
NF C93-620-6*NF EN 60679-6:2011 Quartz crystal controlled oscillators of assessed quality - Part 6 : phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines

Military Standards (MIL-STD)

MIL MIL-PRF-55310/20F-2012 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 40.0 KHz through 60.0 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/15G-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.01 Hz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
MIL MIL-PRF-55310/21F-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ Through 60.0 MHZ, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/16K-2017 Oscillator, Crystal Controlled, TYPE 1 (Crystal Oscillator (XO)), 0.1 HZ Through 80 MHZ, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/8J-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 50 Hz Through 50 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/18F-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.01 Hz Through 15.0 MHz, Hermetic Seal, Square Wave, CMOS
MIL MIL-PRF-55310/19E-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 60.0 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/13J-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 300 Hz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
MIL MIL-PRF-55310/11G-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.05 MHz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
MIL MIL-PRF-55310/14H-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.1 Hz Through 25 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/28C-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 85 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/10J-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 kHz Through 60 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/21G-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ Through 60.0 MHZ, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/29C-2011 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.2 MHz Through 85 MHz, Hermetic Seal, Square Wave, HCMOS
MIL MIL-PRF-55310/26D-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 10kHz Through 65 MHz, Hermetic Seal, Square Wave, High Speed CMOS
MIL MIL-PRF-55310/28D-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 85 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/21H-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ Through 60.0 MHZ, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/13H-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 300 Hz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
MIL MIL-PRF-55310/9J-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 400 kHz Through 60 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/16J-2008 Oscillator, Crystal Controlled, TYPE 1 (Crystal Oscillator (XO)), 0.1 HZ Through 80 MHZ, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/12H-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.05 MHz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
MIL MIL-PRF-55310/27E-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz through 85 MHz, Hermetic Seal, Square Wave, High Speed CMOS
MIL MIL-PRF-55310/27D-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz through 85 MHz, Hermetic Seal, Square Wave, High Speed CMOS
MIL MIL-PRF-55310/32-2006 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.544 MHZ THROUGH 125 MHZ, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
MIL MIL-PRF-55310/17F-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), Gated, 250 kHz Through 50 MHz, Hermetic Seal, Square Wave, TTL
MIL MIL-PRF-55310/27C-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ through 85 MHZ, Hermetic Seal, Square Wave, High Speed CMOS
MIL MIL-PRF-55310/32B-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.544 MHz through 125 MHz, Hermetic Seal, Square Wave, Advanced CMOS
MIL MIL-PRF-55310/31-2006 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.75 MHZ THROUGH 200 MHZ, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
MIL MIL-PRF-55310/31A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.75 MHz Through 200 MHz, Hermetic Seal, Square Wave, Advanced CMOS
MIL MIL-PRF-55310/32C-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.544 MHz through 125 MHz, Hermetic Seal, Square Wave, Advanced CMOS
MIL MIL-PRF-55310F-2018 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
MIL MIL-STD-750-3-2023 TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES —— PART 3: TEST METHODS 3000 THROUGH 3999
MIL MIL-PRF-55310/29B-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.2 MHZ THROUGH 85 MHZ, HERMETIC SEAL, SQUARE WAVE, HCMOS (SUPERSEDING MIL-PRF-55310/29A)
MIL MIL-PRF-55310/19D-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHZ THROUGH 60.0 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/19C)
MIL MIL-PRF-55310/13G-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 300 HZ THROUGH 10 MHZ, HERMETIC SEAL, SQUARE WAVE, CMOS (SUPERSEDING MIL-PRF-55310/13F)
MIL MIL-PRF-55310/16H-2003 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.1 HZ THROUGH 80 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/16G)
MIL MIL-PRF-55310/10H-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1 KHZ THROUGH 60 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/10G)
MIL MIL-PRF-55310/21E-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHZ THROUGH 60.0 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/21D)
MIL MIL-PRF-55310/9H-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 400 KHZ THROUGH 60 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/9G)
MIL MIL-PRF-55310/12G-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.05 MHZ THROUGH 10 MHZ, HERMETIC SEAL, SQUARE WAVE, CMOS (SUPERSEDING MIL-PRF-55310/12F)
MIL MIL-PRF-55310/15F-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.01 HZ THROUGH 10 MHZ, HERMETIC SEAL, SQUARE WAVE, CMOS (SUPERSEDING MIL-PRF-55310/15E)
MIL MIL-PRF-55310/14G-2004 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.1 HZ THROUGH 25 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/14F)
MIL MIL-PRF-55310/25D-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 25 MHZ Through 175 MHZ, Hermetic Seal, Square Wave, Emitter Coupled Logic
MIL MIL-PRF-55310/18E-2004 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.01 HZ THROUGH 15.0 MHZ, HERMETIC SEAL, SQUARE WAVE, CMOS (SUPERSEDING MIL-PRF-55310/18D)
MIL MIL-PRF-55310/11F-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.05 MHZ THROUGH 10 MHZ, HERMETIC SEAL, SQUARE WAVE, CMOS (SUPERSEDING MIL-PRF-55310/11E)
MIL MIL-PRF-55310/28B-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHZ THROUGH 85 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/28A)
MIL MIL-PRF-55310/26C-2004 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 10 KHZ THROUGH 65 MHZ, HERMETIC SEAL, SQUARE WAVE, HIGH SPEED CMOS(SUPERSEDING MIL-PRF-55310/26B)
MIL MIL-PRF-55310/20E-2005 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 40.0 KHZ THROUGH 60.0 MHZ, HERMETIC SEAL, SQUARE WAVE, TTL (SUPERSEDING MIL-PRF-55310/20D)

U.S. Military Regulations and Norms

ARMY MIL-PRF-55310/28 C VALID NOTICE 1-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 85 MHz, Hermetic Seal, Square Wave, TTL
ARMY MIL-PRF-55310/29 C-2011 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.2 MHz THROUGH 85 MHz, HERMETIC SEAL, SQUARE WAVE, HCMOS
ARMY MIL-PRF-55310/27 C-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHZ THROUGH 85 MHZ, HERMETIC SEAL, SQUARE WAVE, HIGH SPEED CMOS
ARMY MIL-PRF-55310/8 J-2009 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 50 Hz THROUGH 50 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
ARMY MIL-PRF-55310/27 D VALID NOTICE 1-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz through 85 MHz, Hermetic Seal, Square Wave, High Speed CMOS
ARMY MIL-PRF-55310/18 F-2009 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.01 Hz THROUGH 15.0 MHz, HERMETIC SEAL, SQUARE WAVE, CMOS
ARMY MIL-PRF-55310/28 C-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 85 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
ARMY MIL-STD-1170 VALID NOTICE 1-2003 VISUAL STANDARDS AND COMPARISON METHODS FOR EVALUATING GRAIN CONFIGURATION IN 7.62 MM CARTRIDGE CASES
ARMY QPL-55310-74-2010 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY QPL-55310-70-2008 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY QPL-55310-71-2010 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY QPL-55310-84-2013 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY QPL-55310-69-2006 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY MIL-PRF-55310 E SUPP 1-2006 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY QPL-55310-81-2013 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
ARMY MIL-STD-1170-1964 VISUAL STANDARDS AND COMPARISON METHODS FOR EVALUATING GRAIN CONFIGURATION IN 7.62 MM CARTRIDGE CASES
ARMY QPL-55310-76-2010 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR

GCC Standardization Organization

GSO IEC 60679-6:2014 Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines
GSO IEC 60679-2:2014 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators
GSO ISO 1392:2015 Determination of crystallizing point -- General method

Electronic Components, Assemblies and Materials Association

ECA TEP105-12-1987 Test Method for Tube Face Reflectivity
ECA 699-1997 Test Method for the Visual Inspection of Quartz Crystal Resonator Blanks

Defense Logistics Agency

DLA MIL-PRF-55310/21 F-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 60.0 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
DLA MIL-PRF-55310/21 G-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 60.0 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
DLA MIL STD 750 3-2012 TEST METHOD STANDARD TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 3: TEST METHODS 3000 THROUGH 3999
DLA MIL-S-19500/288 (2)-1966 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377

Kingdom of Bahrain Testing and Metrology Directorate

BH GSO IEC 60679-6:2016 Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines
BH GSO IEC 63275-1:2024 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
BH GSO IEC 60679-2:2016 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators

The Directorate General of Specifications and Metrology (DGSM)

OS GSO IEC 60679-6:2014 Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines
OS GSO IEC 60679-2:2014 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators
OS GSO ISO 1392:2015 Determination of crystallizing point -- General method

Danish Standards Foundation

DS/EN 60679-6:2011 Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines
DANSK DS/EN 60679-6:2011 Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines
DANSK DS/EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
DS/EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
DANSK DS/ISO 1392:1986 Determination of crystallizing point - General method

European Committee for Electrotechnical Standardization（CENELEC）

EN 60679-6:2011 Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines

Comitato Elettrotecnico Italiano

CEI EN 60679-6:2015 Quartz crystal controlled oscillators of assessed quality Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines
CEI EN 50513:2010 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

National Standardisation Body (ASRO)

STAS 6693/2-1975 Semiconductor devices TRANSISTORS Methods for measuring electrical properties
STAS 12124/1-1982 Semiconductor devices BIPOLAR TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters

American National Standards Institute （ANSI)

ANSI/IEEE 1620:2008 Standard for Test Methods for the Characterization of Organic Transistors and Materials
ANSI/EIA 699:1997 Test Method for the Visual Inspection of Quartz Crystal Resonator Blanks

International Electrotechnical Commission (IEC)

IEC 60689:1980 Measurements and test methods for 32 kHz quartz crystal units for wrist watches and standard values
IEC 62860:2013*IEEE Std 1620:2008 IEC/IEEE Test methods for the characterization of organic transistors and materials
IEC 62860:2013(E) IEEE Std 1620-2008 IEC/IEEE Test methods for the characterization of organic transistors and materials
IEC 62860:2013 Test Methods for the Characterization of Organic Transistors and Materials
IEC 60314:1970 Temperature control devices for quartz crystal units
IEC 62860-1:2013 Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators
IEC 62860-1:2013*IEEE Std 1620.1:2006 IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators

Ente Nazionale Italiano di Unificazione

UNI EN ISO 11979-10:2007 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses
UNI 6239-1968 Chart copy. crystal screen for reproduction

GM Holden Ltd

HOLDEN HN 0201-2012 Crystal Size Determination using Faxfilm Replication

Cuban Institute of Standards and Metrology

NC 66-29-1984 Electronics. Bipolar Transistors Measurement Methods
NC 90-13-07-1984 Metrological Assurance. Photoelectric Coiorimeters. Verification Methods and Means

Electronic Industrial Alliance (U.S.)

EIA-699-1997 Test Method for the Visual Inspection of Quartz Crystal Resonator Blanks

Indonesia Standards

SNI 3140-2:2018 Crystal sugar – Part 2: Refining

Lithuanian Standards Office

LST EN 60679-6-2011 Quartz crystal controlled oscillators of assessed quality -- Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators - Application guidelines (IEC 60679-6:2011)
LST EN 50513-2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Electronic Components, Assemblies and Materials Association

699-1997 Test Method for the Visual Inspection of Quartz Crystal Resonator Blanks
512-1983 Standard Methods for Measurement of the Equivalent Electrical Parameters of Quartz Crystal Units@ 1 kHz to 1 GHz

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD24-6-2002 Thermal Impedance Measurements for Insulated Gate Bipolar Transistors

Spanish Association for Standardization (UNE)

AENOR UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Swedish Institute for Standards

SS-EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Association for Electrical, Electronic & Information Technologies (VDE)

VDE 0126-18-2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing; German version EN 50513:2009

Belgian Standards Institute

NBN T 02-104-1979 Determination of crystallizing point - General method

Standards Norway

NS 9004:1981 Determination of crystallizing point — General method

International Organization for Standardization (ISO)

ISO 1392:1977 Determination of crystallizing point; General method

GM Daewoo

GMKOREA EDS-T-7112-2012 Eutectic measurement method