Silicon crystal
Silicon crystal, Total:23 items.
The international standard classification for "Silicon crystal" includes: Semiconducting materials , Chemical analysis of metals .
The Chinese standard classification for "Silicon crystal" includes: Elemental semiconductor material , Metal physical property test method , Semimetal and semiconductor material in general .
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 12632-1990 General specification of single silicon solar cells
- GB/T 12963-2009 Specification for Polycrystalline Silicon
- GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
- GB/T 12963-1996 Polycrystalline silicon
- GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
- GB/T 12964-2003 Monocrystalline silicon polished wafers
- GB/T 12962-2005 Monoccrystalline silicon
- GB/T 12962-1996 Monocrystalline silicon
- GB/T 4059-1983 Polycrystalline silicon; Examination method; Zone-melting on phosphorus under controlled atmosphere
- GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
- GB/T 12962-2015 Monocrystalline silicon
- GB/T 29504-2013 300 mm monocrystalline silicon
Professional Standard - Electron
- SJ/T 10698-1996 Amorphous silicon reference solar cell
Shanghai Provincial Standard of the People's Republic of China
- DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
Hebei Provincial Standard of the People's Republic of China
- DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer
UNKNOWN
- YB 1602-83 Silicon single crystal
- YB 1601-83 Silicon polycrystalline
- YB 1601-1983 Silicon polycrystalline
- YB 1602-1983 Silicon single crystal
Korean Agency for Technology and Standards (KATS)
- KS D 0261-2012(2017) Visual inspection for silicon wafers with specular surfaces
- KS C 0256-2002(2017) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
- KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials
Semiconductor Equipment and Materials International (SEMI)
- SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
crystal,Crystallization,Crystal form,crystal crack,crystallinity crystal,crystal axis crystal axis,Amorphous nanocrystalline,Jingjing,nanocrystalline amorphous,Amorphous silicon thin film,Crystal faces,crystal form,Crack Jingjing,Crystalline silicon,silicon wafer,Crystalline phase,Crystallization Seed,Silicon crystal,intergranular condition,Grain-along
