GB/T 12962-1996 in English

SUPERSEDED

Monocrystalline silicon

Issued on:1996-01-01
Implemented on:1997-04-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $120.00
$117.00

Standard No:	GB/T 12962-1996
Document status:	SUPERSEDED
Superseded by:	GB/T 12962-2005 Monoccrystalline silicon
Superseded on:	2006-11-06
Title in English:	Monocrystalline silicon
Title in Chinese:	硅单晶
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1996-01-01
Implemented on:	1997-04-01
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H82-Elemental semiconductor material
Professional Classification:	GB-National Standard
Related Keywords:	monocrystalline silicon scopethis standard silicon czochralski method single crystals method
Related Topics:	polysilicon Single crystal silicon inspection Detection of single crystal silicon Single crystal silicon inspection Single Crystal Foil Monocrystalline silicon Niobium tantalum single crystal silicon Single crystal silicon peak Niobium tantalum single crystal silicon Primary crystal How to detect single crystal silicon Polycrystalline vs Single Crystal single crystal target Silicon crystallization peak polycrystalline and monocrystalline Single crystal angle head How to measure single crystal silicon single crystal + phase single crystal fluorescence How about single crystal and polycrystalline Single Crystal Meter Liquid target single crystal molecular single crystal Crystal faces single crystal fluorescence Crack Jingjing Liquid target single crystal Silicon Single Wafer Orienter Single Crystal Bit Silicon single crystal orientation Silicon single crystal single chain single crystal single crystal secondary crystallization Silicon crystal Single crystal silicon target GBT12962 GB/T 12962-1996 GB/T 12962-2005 GB/T 12962-2015 National production of monocrystalline silicon Electronic silicon single crystal Monocrystalline silicon seed technology National standard monocrystalline silicon Monocrystalline silicon seed crystal Silicon single crystal seed crystal Silicon powder for polycrystalline silicon Monocrystalline Silicon International Single crystal silicon seed crystal standard project establishment Monocrystalline silicon quality Monocrystalline silicon product quality Monocrystalline silicon Japan Monocrystalline silicon crystal growth furnace Single crystal electrical properties gbt12962 2015 Standard single crystal for single crystal instrument Silicon wafer

《GB/T 12962-1996硅单晶》由610（中国有色金属工业协会）归口，主管部门为中国有色金属工业协会。
本标准规定了硅单晶的产品分类、技术要求、试验方法、检验规则以及标志、包装、运输、贮存。本标准适用于用直拉法、悬浮区熔法(包括中子嬗变掺杂)制备的硅单晶。产品主要供制作半导体器件使用。

Scope

This standard specifies the product classification, technical requirements, test methods, inspection rules, signs, packaging, transportation and storage of silicon single crystals. This standard applies to silicon single crystals prepared by the Czochralski method and the suspension zone melting method (including neutron transmutation doping), and the products are mainly used for the production of semiconductor components.

More samples: DL/T 5154-2012 NB/T 47013.2-2015 JC/T 2453-2018

Sample only — not a preview of GB/T 12962-1996

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