Single crystal silicon inspection

Single crystal silicon inspection, Total:76 items.

The international standard classification for "Single crystal silicon inspection" includes: Semiconducting materials , Other methods of testing of metals , Nuclear energy engineering , Testing of metals , Chemical analysis of metals , Fiber and cables .

The Chinese standard classification for "Single crystal silicon inspection" includes: Semimetal and semiconductor material in general , Elemental semiconductor material , Metal nondestructive testing method , Material and component for instrument and meter , Compound semiconductor material , Metal physical property test method , Technical management , Optical communication equipment .

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 12962-1996 Monocrystalline silicon
GB/T 32278-2015 Test methods for flatness of monocrystalline silicon carbide wafers
GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
GB/T 25076-2010 Monocrystalline silicon of solar cell
GB/T 12962-2015 Monocrystalline silicon
GB/T 12964-2003 Monocrystalline silicon polished wafers
GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 12964-2018 Monocrystalline silicon polished wafers
GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
GB/T 12962-2005 Monoccrystalline silicon
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 26065-2010 Specification for polished test silicon wafers
GB/T 12632-1990 General specification of single silicon solar cells
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 26069-2022 Annealed monocrystalline silicon wafers
GB/T 26066-2010 Practice for shallow etch pit detection on silicon
GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
GB/T 37418-2019 Lutetium oxyorthosilicate, lutetium-yttrium oxyorthosilicate scintillation single crystals
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 25076-2018 Monocrystalline silicon for solar cell
GB/T 29504-2013 300 mm monocrystalline silicon

Group Standards of the People's Republic of China

T/IAWBS 010-2019 Detection method for measuring the surface Detection method for measuring the surface quality and micropipe densityof polished monocrystalline silicon carbide wafers-Laser Scattering Method
T/IAWBS 001-2021 Silicon carbide single crystal
T/ZZB 2675-2022 Monocrystalline silicon as lapped wafers for TVS
T/CEEIA 769-2023 Fully automatic silicon single crystal furnaces
T/SCSJXH 001-2024 Monocrystalline silicon PERC solar cells
T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells
T/CASME 465-2023 IPA-free Texturizer for Mono-silicon
T/NXCL 31-2024 Conical seed crystals for Czochralski monocrystalline silicon growth
T/HEBQIA 073-2022 Superconducting magnets for Czochralski monocrystalline silicon
T/JSAS 015-2021 Monocrystalline silicon solar cells
T/ZZB 1927-2020 Automatic mono-silicon cutting machine
T/SZBX 118-2023 Monocrystalline silicon wafers for solar cells
T/ZSA 72-2019 Monocrystalline Silicon Carbide

Hebei Provincial Standard of the People's Republic of China

DB13/T 1828-2013 Solar grade monocrystalline silicon wafer
DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer

Shaanxi Provincial Standard of the People's Republic of China

DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells
DB61/T 511-2011 Inspection rules for monocrystalline silicon rods for solar cells

Professional Standard - Electron

SJ/T 10173-1991 TDA75 single crystalline silicon solar cell
SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
SJ/T 11499-2015 Test method for measuring electrical properties of monocrystalline silicon carbide
SJ/T 11854-2022 Czochralski monocrystalline silicon furnace for photovoltaic
SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material
SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide

National Metrological Verification Regulations of the People's Republic of China

JJG 48-1990 Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity

Professional Standard - Non-ferrous Metal

YS/T 1167-2016 Monocrystalline silicon etched wafers

Professional Standard - Building Materials

JC/T 2849-2024 Cerium-doped lutetium oxyorthosilicate single crystals
JC/T 1048-2018 Fused quartz crucibles for single crystal silicon growth
JC/T 1048-2007 Fused quartz crucibles for single crystal silicon growth

Shanghai Provincial Standard of the People's Republic of China

DB31/T 792-2014 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
DB31/ 792-2014 Norm of energy consumption per unit products for monocrystalline silicon and silicon wafers

Professional Standard - Ferrous Metallurgy

YB 1603-1983 Monocrystalline silicon as cut slices and lapped slices

Military Standard of the People's Republic of China-General Armament Department

GJB 2918-1997 Specification for detector grade high resistance zone fused silicon monoliths

American Society for Testing and Materials (ASTM)

ASTM F47-94 Crystalline Silicon Crystal Defect Detection Method
ASTM F40-83 Standard Method for PREPARING MONOCRYSTALLINE TEST INGOTS OF SILICON BY THE VERTICAL-PULLING (CZOCHRALSKI) TECHNIQUE
ASTM F847-02 X-ray measurement of crystallographic orientation on single-crystal silicon wafers
ASTM F41-90 Method for growing silicon single crystal by floating zone method and evaluating polycrystalline silicon ingot

UNKNOWN

YB 1602-83 Silicon single crystal
YB 1602-1983 Silicon single crystal
YB 1603-83 Silicon single crystal cutting discs and grinding discs

Kingdom of Bahrain Testing and Metrology Directorate

BH GSO IEC TS 62804-1-1:2024 Photovoltaic (PV) modules - Test methods for the detection of potential-induced degradation - Part 1-1: Crystalline silicon - Delamination

Korean Agency for Technology and Standards (KATS)

KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials
KS D 0261-2012(2017) Visual inspection for silicon wafers with specular surfaces
KS C 0256-2002 Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

Semiconductor Equipment and Materials International (SEMI)

SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS

German Institute for Standardization

DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)
DIN V VDE V 0126-18-3:2007-06 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)

GCC Standardization Organization

OS GSO IEC TS 62804-1-1:2024 Photovoltaic (PV) modules - Test methods for the detection of potential-induced degradation - Part 1-1: Crystalline silicon - Delamination

Gosstandart of Russia

GOST 24392-1980 Monocrystalline silicon and germanium. Measurement of the electrical resistivity by the four-probe method