GB/T 30866-2014 in English

SUPERSEDED

Test method for measuring diameter of monocrystalline silicon carbide wafers

Issued on:2014-07-24
Implemented on:2015-02-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $90.00
$88.00

Standard No:	GB/T 30866-2014
Document status:	SUPERSEDED
Superseded by:	GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
Superseded on:	2026-02-01
Title in English:	Test method for measuring diameter of monocrystalline silicon carbide wafers
Title in Chinese:	碳化硅单晶片直径测试方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2014-07-24
Implemented on:	2015-02-01
Professional Classification:	GB-National Standard
Related Keywords:	monocrystalline silicon carbide wafers scopethis standard silicon carbide test method carbide silicon
Related Topics:	chip Silicon carbide Silicon carbide valve plate Test diameter carbonization Test diameter Single crystal silicon inspection Detection of single crystal silicon Silicon Wafer Inspection Method Single crystal silicon inspection Single crystal silicon peak Single crystal test Three-chip board machine How to detect single crystal silicon How to measure single crystal silicon crystalline carbon carbonization+ single chip Silicon carbide ignition chip How to measure diameter silicon wafer for testing Silicon test piece Silicon Single Wafer Orienter Oxygen and carbon measurement in silicon wafer Silicon carbide single crystal root diameter method crystalline carbon Other silicon carbide How to use the diameter diameter unit platelet cluster Silicon Dioxide Wafer Single crystal silicon target Measuring diameter GBT30866 GB/T 30866-2014 diameter measurement How to determine single crystal and polycrystalline Carbonation test Preparation method of monosilicic acid Electronic silicon single crystal Silicon carbide equipment Silicon carbide crystal orientation test method National standard silicon wafer diameter measurement method Silicon carbide single crystal crystal orientation test method Leaf total carbon determination method Method of carbon coating silicon Conductive silicon carbide single wafer resistivity test Monocrystalline Silicon International Single crystal silicon seed crystal standard project establishment Silicon carbide monocrystalline energy efficiency rating Monocrystalline silicon quality Optical cable diameter test Silicon wafer diameter test method Silicon carbide bulk metal test method Collimator and polarizer test methods silicon carbide membrane Silicon carbide wafer national standard Silicon carbide wafer national standard Monocrystalline silicon Japan Crystalline silicon detection method Radio and television metering silicon carbide testing silicon carbide crystal execution Single wafer preparation method silicon carbide wafer silicon carbide wafer Silicon carbide wafer inspection Silicon carbide crystal evaluation Silicon carbide electrical properties test standards

《GB/T 30866-2014碳化硅单晶片直径测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。
本标准规定了用千分尺测量碳化硅单晶片直径的方法。
本标准适用于碳化硅单晶片直径的测量。

Scope

This standard specifies the method for measuring the diameter of a silicon carbide single wafer with a micrometer. This standard applies to the measurement of the diameter of a silicon carbide single wafer.

More samples: JJG 21-2008 YD/T 3934-2021 DL/T 5154-2012

Sample only — not a preview of GB/T 30866-2014

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