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Database: 365,228(8 Aug 2026)

chip

chip, Total:41 items.

The international standard classification for "chip" includes: Other non-ferrous metals and their alloys , Insulating gases , Semiconducting materials , Piezoelectric and dielectric devices , Testing of metals .

The Chinese standard classification for "chip" includes: Technical Management , Technical management , Technical management , Dedicated processing equipment , Rare scattered metals and their alloys , Semimetal , Metal physical property test method , Quartz crystal and piezoelectric element , Semimetal and semiconductor material in general , Compound semiconductor material , Elemental semiconductor material .


Professional Standard - Electron

  • SJ/T 31091-1994 Requirements of Readiness and Methods of Inspection and Assessment for Wafer Slicers
  • SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
  • SJ/T 11497-2015 Test method for thermal stability testing of gallium arsenide wafers
  • SJ 20520-1995 Specification for Cadmium-Zine Telluride Slice for Mercury-Cadmium Telluride film
  • SJ 20640-1997 Specification indium antimonide single crystal slices for use in infrared detector
  • SJ 20437-1994 Specification for lead tin telluride slice for use in infrared detector
  • SJ 20750-1999 Specification for radiation hardened monocrystal silicon wafers for millitary CMOS integrated circuits
  • SJ/T 11492-2015 Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence
  • SJ 3118-1988 Wafer holder
  • SJ/T 31092-1994 Requirements of Readiness and Methods of Inspection and Assessment for NC Wafer Cutting (Scribing) Machines
  • SJ 20438-1994 Methods for measurement of lead tin telluride slice for use in infrared detector

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 26066-2010 Practice for shallow etch pit detection on silicon
  • GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
  • GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
  • GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
  • GB/T 32278-2015 Test methods for flatness of monocrystalline silicon carbide wafers
  • GB/T 5238-2009 Monocrystalline germanium and monocrystalline germanium slices
  • GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell
  • GB/T 12964-2003 Monocrystalline silicon polished wafers
  • GB/T 30118-2013 Single Crystal Wafers for Surface Acoustic Wave (SAW) Device Applications - Specifications and Measuring Methods
  • GB/T 16596-1996 Specification for establishing a wafer coordinate system
  • GB/T 15713-1995 Monocrystalline germanium slices
  • GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
  • GB/T 16595-1996 Specification for a universal wafer grid
  • GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
  • GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

Group Standards of the People's Republic of China

  • T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
  • T/IAWBS 015-2021 Test method for full width at half maximum of double crystal X-ray rocking curve of Ga2O3 single crystal substrate
  • T/ZSA 38-2020 Experimental method for residual stress in SiC wafers
  • T/WLJC 57-2019 Precision grinding disc for wafers
  • T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
  • T/IAWBS 011-2019 Test methods for measuring resistivity of conductive silicon carbide wafers with a noncontact eddy-current gauge
  • T/CASAS 003-2018 4H-SiC Epitaxial Wafers for p-IGBT Devices
  • T/WLJC 58-2019 Dressing wheel for wafers precision grinding disc
  • T/WLJC 59-2019 Quartz wafer inverted wave tube
  • T/ZZB 0497-2018 Single crystal wafers for surface acoustic wave device applications
  • T/IAWBS 008-2019 Experimental method for residual stress in SiC wafers
  • T/CASAS 013-2021 Measuring method for testing the density of dislocation in SiC crystal Combined KOH etching and image recognition methods

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence

  • GJB 6259-2008 Specification for self-adhesive polishing pad used for polishing of Te-Cd-Hg crysal wafer

Shaanxi Provincial Standard of the People's Republic of China

  • DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells

International Electrotechnical Commission (IEC)