GB/T 30868-2014 in English

SUPERSEDED

Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching

Issued on:2014-07-24
Implemented on:2015-02-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $90.00
$88.00

Standard No:	GB/T 30868-2014
Document status:	SUPERSEDED
Superseded by:	GB/T 30868-2025 Test method for micropipe density of monocrystalline silicon carbide
Superseded on:	2026-02-01
Title in English:	Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
Title in Chinese:	碳化硅单晶片微管密度的测定化学腐蚀法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2014-07-24
Implemented on:	2015-02-01
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H83-Compound semiconductor material
Professional Classification:	GB-National Standard
Related Keywords:	monocrystalline silicon carbide wafers micropipe density silicon carbide single crystal micropipe density test method
Related Topics:	Palladium Carbon Density chip Silicon carbide Silicon carbide valve plate chemical corrosion carbonization Corrosion test piece carbon steel chemical method Silicon carbide single crystal Determination of corrosion rate Detection of single crystal silicon carbon four density single-mode microwave chemistry microtubules Electrochemical determination of corrosion Eclipse How to detect single crystal silicon carbonization+ microcrystalline carbon microcrystalline carbon single chip Silicon carbide ignition chip chemical corrosion Silicon Single Wafer Orienter Other silicon carbide Corrosion sheet measurement GBT30868 GB/T 30868-2014 Lattice density Silicon carbide monocrystalline energy efficiency rating Silicon carbide wafer national standard Silicon carbide wafer national standard silicon carbide crystal execution Determination of density silicon carbide wafer silicon carbide wafer Silicon carbide crystal evaluation

《GB/T 30868-2014碳化硅单晶片微管密度的测定化学腐蚀法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。
本标准规定了利用熔融氢氧化钾腐蚀法测定碳化硅单晶微管密度的方法。
本标准适用于碳化硅单晶微管密度的测定。

Scope

This standard specifies the method for measuring the micropipe density of silicon carbide single crystal by corrosion method of molten potassium hydroxide. This standard applies to the determination of silicon carbide single crystal micropipe density.

More samples: JC/T 2453-2018 GB 50021-2001(2009) GB 18306-2015

Sample only — not a preview of GB/T 30868-2014

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