silicon carbide crystal execution
silicon carbide crystal execution, Total:51 items.
The international standard classification for "silicon carbide crystal execution" includes: Semiconducting materials , Testing of metals , Abrasives , Ceramic and glass insulating materials .
The Chinese standard classification for "silicon carbide crystal execution" includes: Semimetal and semiconductor material in general , Compound semiconductor material , Metal physical property test method , Grinding material and apparatus , Elemental semiconductor material , Special ceramics .
Group Standards of the People's Republic of China
- T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
- T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
- T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
- T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
- T/CI 444-2024 Technical requirements for carbon footprint evaluation of crystalline silicon products
- T/CASAS 003-2018 4H-SiC Epitaxial Wafers for p-IGBT Devices
- T/IAWBS 001-2021 Silicon carbide single crystal
- T/SQIA 032-2023 Technical requirements for carbon footprint assessment of crystalline silicon photovoltaic (PV) module
- T/IAWBS 005-2024 6~8 inch polished monocrystalline silicon carbide wafers
- T/ZSA 72-2019 Monocrystalline Silicon Carbide
- T/IAWBS 021-2024 Test methods for edge contour of silicon carbide wafers
- T/CASAS 007-2020 Test Specification for Silicon Carbide（SiC）Field-effect Transistors（MOSFET）Module of Electric Vehicles
- T/CIET 177-2023 Guidelines for Carbon Footprint Evaluation of Crystalline Silicon Solar Cell Products
- T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 32278-2015 Test methods for flatness of monocrystalline silicon carbide wafers
- GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials
- GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
- GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
- GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
- GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
- GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
- GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
Professional Standard - Machinery
- JB/T 10376-2002 Special products of silicon carbide Slab of silicon dioxide bonded silicon carbide
- JB/T 10449-2004 Special product of sillicon carbide—Beam of recrystallized silicon carbide
- JB/T 10152-2010 Special products of silicon carbide-Silicon nitride bonded silicon carbide-Plate
- JB/T 10698-2007 Special products of silicon carbide-Recrystallized silicon carbide-Plate
- JB/T 10152-2000 Special products of silicon carbide - Slab of silicon nitride bonded silicon carbide
- JB/T 8340-2013 Special Products of Silicon Carbide - Recrystallized Silicon Carbide Thermocouple Protection Tube
- JB/T 10152-2023 Silicon carbide special products silicon nitride bonded silicon carbide plate
- JB/T 10376-2013 Special Products of Silicon Carbide - Slab of Silicon Dioxide Bonded Silicon Carbide
工业和信息化部
- JB/T 10449-2020 Special product of sillicon carbide—Beam of recrystallized silicon carbide
未注明发布机构
- SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
- SEMI M81-0611-2011 GUIDE TO DEFECTS FOUND ON MONOCRYSTALLINE SILICON CARBIDE SUBSTRATES
Professional Standard - Electron
- SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material
- SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
- SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
- SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
- SJ/T 11499-2015 Test method for measuring electrical properties of monocrystalline silicon carbide
- SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate
Professional Standard - Building Materials
- JC/T 2349-2015 Si3N4 ceramic insulation components for polycrystalline silicon production
- JC/T 2796-2023 High purity graphite powder for silicon carbide single crystal
Taiwan Provincial Standard of the People's Republic of China
- CNS 11417-1985 Silicon Carbide Electric Heating Element
RO-ASRO
- STAS 11039/1-1977 SILICOCALCIUM General specifications for chemical analysis carrying out
- STAS 11033/1-1978 FERROSILICOCHROME General specifications for chemical analysis carrying out
- STAS 11047/1-1978 FERROSILICOMANGANESE General specifications for chemical analysis carrying out
- STAS 9675-1974 CRYSTALLINE SILICON
HU-MSZT
- MNOSZ 24165-1952 chemical crystalline carbonate
International Electrotechnical Commission (IEC)
- IEC PAS 62084:1998 Implementation of Flip Chip and Chip Scale technology
SCC
- MIL MIL-T-13366-1954 TUNGSTEN CARBIDE, CRYSTALLINE (NO S/S DOCUMENT)
- CEI EN 60276:1997 Definitions and Nomenclature for Carbon Brushes, Brush Holders, Commutators, and Slip Rings
British Standards Institution (BSI)
- BS EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products -Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon
