GB/T 32278-2015 in English

SUPERSEDED

Test methods for flatness of monocrystalline silicon carbide wafers

Issued on:2015-12-10
Implemented on:2017-01-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $90.00
$88.00

Standard No:	GB/T 32278-2015
Document status:	SUPERSEDED
Superseded by:	GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers
Superseded on:	2026-02-01
Title in English:	Test methods for flatness of monocrystalline silicon carbide wafers
Title in Chinese:	碳化硅单晶片平整度测试方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2015-12-10
Implemented on:	2017-01-01
ICS Classification:	77.040-Testing of metals
Chinese Classification:	H21-Metal physical property test method
Professional Classification:	GB-National Standard
Related Keywords:	monocrystalline silicon carbide wafers scopethis standard silicon carbide flatness test test methods test
Related Topics:	chip Silicon carbide Silicon carbide valve plate carbonization Silicon carbide single crystal Single crystal silicon inspection Detection of single crystal silicon Silicon Wafer Inspection Method iso flatness Single crystal silicon inspection Single crystal silicon peak How to detect single crystal silicon crystalline carbon carbonization+ Flatness single chip Silicon carbide ignition chip silicon wafer for testing Silicon test piece Silicon Single Wafer Orienter Silicon single crystal Oxygen and carbon measurement in silicon wafer Silicon carbide single crystal crystalline carbon Silicon Dioxide Wafer Carbonized sheet Single crystal silicon target GBT32278 GB/T 32278-2015 flatness light Silicon wafer flatness SEMI Tablet Hardness Test Method Flatness detection method The test methods for flatness include Test method for carbonization temperature of liquids How to measure flatness Material flatness test Ink flatness test method International standard testing method for carbonization temperature Bottle mouth flatness detection method Test method for flatness of press load plate Beam and plate flatness measurement method Flatness test method Flatness and thickness measurement methods Slide flatness Section flatness detection method National standard for wafer mechanical strength testing Briefly describe the methods and requirements for flatness testing Silicon carbide crystal orientation test method Silicon carbide single crystal crystal orientation test method Steel flatness Workpiece flatness detection method Epitaxial silicon wafer flatness Aluminum profile flatness test method Leaf total carbon determination method Method of carbon coating silicon Conductive silicon carbide single wafer resistivity test Silicone oil alkalinity test method Monocrystalline Silicon International Crystallinity test method Platform flatness detection method Measurement and Correction Methods for Rack Flatness Material flatness measurement method Component surface flatness detection method Silicon carbide monocrystalline energy efficiency rating Monocrystalline silicon quality Methods to implement flatness detection Product flatness test method Laser test method for flatness Silicon carbide bulk metal test method Silicon carbide wafer national standard Silicon carbide wafer national standard Prefabricated component flatness detection method Monocrystalline silicon Japan Substrate flatness detection method Fiber flatness test method Crystalline silicon detection method Radio and television metering silicon carbide testing Wafer flatness detection method silicon carbide crystal execution Single wafer preparation method Bottle mouth flatness measurement method Rice field flatness measurement method silicon carbide wafer silicon carbide wafer gb/t 32278-2015 Silicon carbide wafer inspection Silicon carbide crystal evaluation The method for measuring cross-section flatness is Material flatness test method Flatness test methods include Silicon carbide electrical properties test standards

《GB/T 32278-2015碳化硅单晶片平整度测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。
本标准规定了碳化硅单晶抛光片的平整度,即总厚度变化(TTV)、局部厚度变化(LTV)、弯曲度(Bow)、翘曲度(Warp)的测试方法。
本标准适用于直径为50.8mm、76.2mm、100mm,厚度0.13mm~1mm 碳化硅单晶抛光片平整度的测试。

Scope

This standard specifies the flatness of silicon carbide single crystal polished wafers, including the test methods for total thickness variation (TTV), local thickness variation (LTV), bow and warp. This standard is applicable to the flatness test of silicon carbide single crystal polished wafers with diameters of 50.8 mm, 76.2 mm and 100 mm and thicknesses of 0.13 mm to 1 mm.

More samples: GB 50021-2001(2009) JGJ 94-2008 DL/T 5154-2012

Sample only — not a preview of GB/T 32278-2015

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