GB/T 30656-2014 in English

SUPERSEDED

Polished monocrystalline silicon carbide wafers

Issued on:2014-12-31
Implemented on:2015-09-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $220.00
$214.00

Standard No:	GB/T 30656-2014
Document status:	SUPERSEDED
Superseded by:	GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
Superseded on:	2023-10-01
Title in English:	Polished monocrystalline silicon carbide wafers
Title in Chinese:	碳化硅单晶抛光片
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2014-12-31
Implemented on:	2015-09-01
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H83-Compound semiconductor material
Professional Classification:	GB-National Standard
Related Keywords:	polished monocrystalline silicon carbide wafers scopethis standard silicon carbide polished carbide silicon
Related Topics:	single crystal chip Silicon carbide Silicon carbide valve plate standard silicon wafer carbonization Silicon Nitride Windows crystal Silicon carbide single crystal Single crystal silicon inspection Detection of single crystal silicon Silicon Spectrum Silicon Spectrum Diffraction peak broadening Diffraction peak broadening Spectrum of crystalline silicon Single crystal silicon inspection Diffraction peak broadening Silicon carbon instrument Titanium silicon carbide Double jet polishing peak broadening Silicon Nitride Windows Silicon Titanium and Silicon Carbide Crystal English New Silicon Carbide Titanium silicon carbide Diffraction peak + broadening Titanium + silicon carbide + Polisher Single crystal silicon peak Diffraction peak broadening+ Three-chip board machine How to detect single crystal silicon Silicon carbide emission spectrum Single crystal standard three chips photometric film Silicon carbidex Crystalline silicon carbide plate Chemical polishing machine equipment Diffraction peak broadening How to measure single crystal silicon single crystal + phase crystalline carbon single crystal fluorescence Silyne carbon carbonization+ monolithic photon monolithic photon molecular single crystal Silicon carbide ignition chip single crystal fluorescence SiC peak light sheet light crystal light Silicon Single Wafer Orienter Silicon carbon instrument Silicon single crystal orientation Silicon single crystal single chain single crystal Optical film type Oxygen and carbon measurement in silicon wafer carbon to silicon ratio Silicon carbide Silicon carbide single crystal jar polish crystalline carbon Other silicon carbide Single Crystal+ platelet cluster Silicon Dioxide Wafer Silicon Nitride Windows Single crystal silicon target Titanium silicide SiC spectrometer SiC 60 GBT30656 GB/T 30656-2014 Silicon single crystal polished wafer carbon crystal wafer polishing National production of monocrystalline silicon polishing disc Electronic silicon single crystal Silicon carbide single crystal polished wafer Silicon carbide equipment Gallium antimonide single crystal polished wafer Conductive silicon carbide single wafer resistivity test Monocrystalline Silicon International Single crystal silicon seed crystal standard project establishment Silicon carbide monocrystalline energy efficiency rating Monocrystalline silicon quality silicon carbide membrane Silicon carbide wafer national standard Silicon carbide wafer national standard Monocrystalline silicon product quality Monocrystalline silicon Japan Monocrystalline silicon crystal growth furnace silicon carbide crystal execution Single wafer preparation method Silicon carbide polishing Silicon carbide first grade quality silicon carbide wafer silicon carbide wafer Silicon carbide wafer inspection Silicon carbide emissions Silicon carbide crystal evaluation Standard single crystal for single crystal instrument Silicon wafer

《GB/T 30656-2014碳化硅单晶抛光片》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了4H及6H碳化硅单晶抛光片的要求、检验方法、检验规则、标志、包装、运输、储存、质量证明书及订货单（或合同）内容。
本标准适用于4H及6H碳化硅单晶研磨片经单面或双面抛光后制备的碳化硅单晶抛光片。产品主要用于制作半导体照明及电力电子器件的外延衬底。

Scope

This standard specifies the requirements, inspection methods, inspection rules, marks, packaging, transportation, storage, quality certificates and purchase orders (or contracts) for 4H and 6H silicon carbide single crystal polished wafers. This standard applies to 4H and 6H silicon carbide single crystal polishing wafers prepared after single-side or double-side polishing. The products are mainly used to make epitaxial substrates for semiconductor lighting and power electronic devices.

More samples: GB 18306-2015 NB/T 47013.2-2015 GB 50021-2001(2009)

Sample only — not a preview of GB/T 30656-2014

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