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Database: 365,228(8 Aug 2026)

polishing disc

polishing disc, Total:24 items.

The international standard classification for "polishing disc" includes: Semiconducting materials , Testing of metals in general , Chemical analysis of metals , Other methods of testing of metals .

The Chinese standard classification for "polishing disc" includes: Elemental semiconductor material , Compound semiconductor material , Semimetal and semiconductor material analysis method , Metal physical property test method , Metal nondestructive testing method .


General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
  • GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
  • GB/T 12964-2003 Monocrystalline silicon polished wafers
  • GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
  • GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
  • GB/T 30858-2014 Polished mono-crystalline sapphire substrate product
  • GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
  • GB/T 19921-2005 Test method of particles on silicon wafer surfaces
  • GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
  • GB/T 26065-2010 Specification for polished test silicon wafers
  • GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers

Professional Standard - Electron

  • SJ/T 11505-2015 Sapphire single crystal polished wafers specification
  • SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
  • SJ/T 11503-2015 Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers
  • SJ/T 11490-2015 Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers
  • SJ/T 11504-2015 Test method for measuring surface quality of polished monocrystalline silicon carbide

Group Standards of the People's Republic of China

  • T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
  • T/ZZB 0648-2018 200 mm heavily phosphorus-doped single crystalline Czochralski silicon polished wafers
  • T/NXCL 016-2022 200 mm heavily antimony-doped single crystaline Czochralski silicon polished wafer
  • T/IAWBS 014-2021 Test method for dislocation density of silicon carbide polished wafers
  • T/NXCL 017-2022 300 mm heavily phosphorus-doped single crystaline Czochralski silicon polished wafers
  • T/ZZB 2332-2021 Polished sapphire substrate for LED

国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 12964-2018 Monocrystalline silicon polished wafers
  • GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit