GB/T 31351-2014 in English

SUPERSEDED

Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers

Issued on:2014-12-31
Implemented on:2015-09-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $100.00
$97.00

Standard No:	GB/T 31351-2014
Document status:	SUPERSEDED
Superseded by:	GB/T 30868-2025 Test method for micropipe density of monocrystalline silicon carbide
Superseded on:	2026-02-01
Title in English:	Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
Title in Chinese:	碳化硅单晶抛光片微管密度无损检测方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2014-12-31
Implemented on:	2015-09-01
ICS Classification:	77.040.99-Other methods of testing of metals
Chinese Classification:	H26-Metal nondestructive testing method
Professional Classification:	GB-National Standard
Related Keywords:	polished monocrystalline silicon carbide wafers scopethis standard crystal silicon carbide micropipe density silicon carbide nondestructive test method
Related Topics:	Carbon sheet inspection standard Silicon carbide valve plate Density NDT carbonization How to detect luminosity Non-destructive density measurement Crystal form detection method Silicon carbide single crystal Single crystal silicon inspection Detection of single crystal silicon Silicon Wafer Inspection Method Crystallization detection method carbon four density How to test single crystal Light sheet detection Single crystal silicon inspection Crystallization detection method microtubules carbon photometer How to detect single crystal silicon microtubule system single photon detection photometric film Micro Density Detection Non-destructive testing method Non-destructive testing method Non-destructive testing method carbonization+ Non-destructive testing density sheet microcrystalline carbon Twin detection method How to detect single crystal Single crystal detection basis detection density method SiC spectrometer Photometric detection GBT31351 GB/T 31351-2014 Silicon single crystal polished wafer wafer polishing Chemiluminescence method detects no SOP Lattice density polishing disc Detection method of activation degree Silicon carbide single crystal polished wafer Silicon carbide crystal orientation test method Chemical testing of silicon How to detect carbon-carbon double bonds Detection of silicon carbide plates Lens curvature detection method Filter detection method Optical density detection method Ammonia density detection method Carbon flow detection method Crystalline silicon detection method Crystal bulk density detection method Single wafer preparation method Silicon carbide polishing Tablet testing methods National Energy Administration Steel Pipe Nondestructive Testing Method Detection method precision Silicon carbide wafer inspection microchemical methods Crystal water detection method Precision testing method

《GB/T 31351-2014碳化硅单晶抛光片微管密度无损检测方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。
本标准规定了4H晶型和6H晶型碳化硅单晶抛光片的微管密度的无损检测方法。
本标准适用于4H晶型和6H晶型碳化硅单晶抛光片经单面抛光或双面抛光后、微管的径向尺寸在一微米至几十微米范围内的微管密度的测量。

Scope

This standard specifies the non-destructive testing method for the micropipe density of 4H and 6H silicon carbide single crystal polished wafers. This standard is applicable to the measurement of the micropipe density with the radial size of micropipes in the range of one micron to tens of microns after single-side polishing or double-side polishing of 4H crystal and 6H crystal silicon carbide single crystal polished wafers.

More samples: DL/T 368-2010 YD/T 3934-2021 DL/T 5154-2012

Sample only — not a preview of GB/T 31351-2014

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