GB/T 29506-2013 in English
VALID300 mm polished monocrystalline silicon wafers
- Issued on:2013-05-09
- Implemented on:2014-02-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$156.00
《GB/T 29506-2013300mm 硅单晶抛光片》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
Scope
This standard specifies the terms and definitions, technical requirements, test methods, detection rules and signs of silicon single crystal polished wafers with a diameter of 300 mm, p-type, <100> crystal orientation, and a resistivity of 0.5 Ω·cm~20 Ω·cm. , packaging, transportation, storage, etc. This standard applies to silicon single crystal polished wafers prepared by double-sided polishing of Czochralski single crystal grinding wafers with a diameter of 300 mm. The product is mainly used for substrates meeting the technical requirements of integrated circuit ICs with a line width of 90 nm.

Loading PDF document...
Error loading PDF. Please make sure the file is valid and try again.
We also recommend
-

GB/T 44334-2024 in English
Silicon epitaxial wafers with buried layers
2024-08-23 -

GB/T 26069-2022 in English
Annealed monocrystalline silicon wafers
2022-03-09 -

GB/T 26071-2026 in English
Monocrystalline silicon and wafers for solar cells
2026-01-28 -

GB/T 29849-2013 in English
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
2013-11-12 -

GB/T 14139-2019 in English
Silicon epitaxial wafers
2019-06-04 -

GB/T 5238-2019 in English
Monocrystalline germanium and monocrystalline germanium slices
2019-06-04 -

GB/T 41325-2022 in English
Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
2022-03-09 -

GB/T 30861-2014 in English
Germanium substrate for solar cell
2014-07-24 -

GB/T 25074-2025 in English
Solar-grade polycrystalline silicon
2025-06-30