GB/T 44334-2024 in English
VALIDSilicon epitaxial wafers with buried layers
- Issued on:2024-08-23
- Implemented on:2025-03-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$262.00
《GB/T 44334-2024 埋层硅外延片》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准委。
Introduction
1. Standard Overview
Buried silicon epitaxial wafers refer to semiconductor materials with a specific buried layer structure formed on a silicon substrate during epitaxial growth. The GB/T 44334-2024 standard "Buried silicon epitaxial wafers" specifies the classification, technical requirements, test methods and inspection rules of the product, and is applicable to the manufacturing of integrated circuit chips and discrete semiconductor devices.
2. Comparison of standard frameworks
| Dimensions | GB/T 44334—2024 | Comparison standards (such as International Electrotechnical Commission standards) |
|---|---|---|
| Product classification | n-type and p-type, divided by diameter 76.2mm, 100.0mm, etc. | Similar classification, but some international standards do not clearly define the buried layer structure requirements |
| Technical requirements | Covering multi-dimensional indicators such as substrate materials, epitaxial layers, geometric parameters, etc. | Focus on electrical performance and surface quality, lack of detailed specifications for buried layer structures |
| Test methods | Specify test standards for pattern drift rate, resistivity, etc. | No unified measurement method for epitaxial layer transition zone width |
3. Implementation suggestions
Purchaser:
- Specify the technical parameters and test requirements in the order form to ensure consistency with GB/T 44334—2024.
- Strengthen supplier quality audits, focusing on the integrity of the buried layer structure.
Manufacturer:
- Optimize the epitaxial growth process to control the pattern drift rate and distortion rate.
- Establish a complete quality traceability system to ensure product consistency.
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