How to measure single crystal silicon

How to measure single crystal silicon, Total:43 items.

The international standard classification for "How to measure single crystal silicon" includes: Semiconducting materials , Testing of metals , Nuclear energy engineering .

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 42263-2022 Determination of nitrogen content in silicon single crystal—Secondary ion mass spectrometry method
GB/T 12964-2003 Monocrystalline silicon polished wafers
GB/T 12962-2015 Monocrystalline silicon
GB/T 12962-2005 Monoccrystalline silicon
GB/T 29504-2013 300 mm monocrystalline silicon
GB/T 12962-1996 Monocrystalline silicon
GB/T 25076-2010 Monocrystalline silicon of solar cell
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon

DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer

SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
SJ/T 11504-2015 Test method for measuring surface quality of polished monocrystalline silicon carbide
SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide

T/NXCL 30-2024 300 mm low oxygen content single crystaline Czochralski silicon
T/NXCL 29-2024 300 mm low oxygen content single crystaline Czochralski silicon polished wafers
T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells
T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
T/CEEIA 769-2023 Fully automatic silicon single crystal furnaces
T/SCSJXH 001-2024 Monocrystalline silicon PERC solar cells
T/ZSA 72-2019 Monocrystalline Silicon Carbide
T/CAB 0181-2022 The methods of measuring on characteristic parameters of both LYSO and LSO scintillators
T/IAWBS 001-2021 Silicon carbide single crystal

GB/T 37418-2019 Lutetium oxyorthosilicate, lutetium-yttrium oxyorthosilicate scintillation single crystals
GB/T 12964-2018 Monocrystalline silicon polished wafers
GB/T 26069-2022 Annealed monocrystalline silicon wafers

SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS

AWWA IMT98027 Performance Measurement: How Do You Know If You're Doing OK If You Don't Know What OK IS?
AWWA SOURCES59233 Drought: What Do You Do When You Only Have 88 Days of Water Left and There is No Rain in Sight?

KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials
KS D 0257-2022 Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

ASTM F847-94(1999) Standard Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)