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silicon wafers large-size silicon wafers silicon single crystal polishing wafer monocrystalline silicon geometric parameter optimization taking silicon cables-general scopethis standard applies general purpose wire rod introduction standard revision background grade iii evaluation
GB/T 12964-2018 in English

GB/T 12964-2018 in English

VALID

Monocrystalline silicon polished wafers

  • Issued on:2018-09-17
  • Implemented on:2019-06-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00
Standard No: GB/T 12964-2018
Document status: VALID
Title in English: Monocrystalline silicon polished wafers
Title in Chinese: 硅单晶抛光片
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2018-09-17
Implemented on: 2019-06-01
Superseding: GB/T 12964-2003 Monocrystalline silicon polished wafers
ICS Classification: 29.045-Semiconducting materials
Chinese Classification: H82-Elemental semiconductor material
Professional Classification: GB-National Standard
Related Keywords: silicon wafers
large-size silicon wafers
silicon single crystal polishing wafer
monocrystalline silicon
geometric parameter optimization taking silicon
Related Topics: polishing
Spectroscopic crystal
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crystal
Single crystal silicon inspection
Detection of single crystal silicon
Silicon Spectrum
Silicon Spectrum
Spectrum of crystalline silicon
Single crystal silicon inspection
Single Crystal Foil
Double jet polishing
Polisher
Single crystal silicon peak
Crystal Core Optoelectronics
Three-chip board machine
How to detect single crystal silicon
Polycrystalline vs Single Crystal
three chips
single crystal target
Silicon crystallization peak
photometric film
polycrystalline and monocrystalline
Single crystal angle head
How to measure single crystal silicon
single crystal + phase
single crystal fluorescence
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Wafer analysis
monolithic photon
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Wafer analysis
Liquid target single crystal
molecular single crystal
single crystal fluorescence
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Jujing Optoelectronics
Liquid target single crystal
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Single Crystal Bit
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jar polish
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Single crystal silicon target
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GB/T 12964-2003
GB/T 12964-2018
Silicon single crystal polished wafer
wafer polishing
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National production of monocrystalline silicon
polishing disc
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Silicon wafer

《GB/T 12964-2018硅单晶抛光片》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC2(全国半导体设备和材料标准化技术委员会材料分会)执行,主管部门为国家标准化管理委员会。


Introduction

1. Background of standard formulation and analysis of technological evolution

GB/T 12964-2018 "Silicon Single Crystal Polishing Wafer" is a technical standard for silicon single crystal polishing wafer, a key material in the semiconductor industry, replacing the previous GB/T12964-2003 version. With the rapid development of semiconductor technology, silicon single crystal polishing wafers are increasingly used in integrated circuits, discrete components and other fields, and higher requirements are placed on the quality and performance of materials.

The main revisions to this standard include:

  • The scope of application has been expanded to cover silicon single crystal polishing wafers prepared by the CZ method and the FZ method, with a diameter of no more than 200mm.
  • The requirements for the surface metal and bulk metal (iron) content of silicon wafers with a diameter of 150mm and 200mm have been added.
  • The requirements for geometric parameters, electrical properties and surface quality have been optimized to meet the needs of more advanced semiconductor manufacturing processes.

2. Comparative analysis of standard frameworks

Standard items Requirements of the 2003 version Revised contents of the 2018 version
Scope of application Applicable only to silicon polishing wafers prepared by etching and thinning of CZ silicon single crystal grinding wafers. Expanded to include silicon polishing wafers prepared by CZ method and floating zone melting method (including neutron variable doping and gas phase doping), with a clear diameter of no more than 200mm.
Classification According to the silicon single crystal growth method, it is divided into CZ (CZ) and floating zone melting (FZ). Added surface orientation classification, including the commonly used {100}, {110}, and {111}.
Geometric parameter requirements The specific values of local flatness and curvature are not specified. Added local flatness requirements for silicon polishing wafers with a diameter of not less than 125mm, and clarified the specific parameter limits within different diameter ranges.

Case Study: Geometric Parameter Optimization

Taking silicon polishing wafers with diameters of 150mm and 200mm as an example, the local flatness requirements are increased from the original ≤1.5μm (15mm×15mm) to ≤0.8μm (25mm×25mm), reflecting the standard's higher precision requirements for large-size silicon wafers. This optimization not only meets the needs of advanced semiconductor manufacturing processes, but also promotes the development of related testing technologies.


3. Implementation Suggestions

In order to ensure the smooth implementation of GB/T 12964-2018, it is recommended that:

  1. Suppliers: Strengthen internal quality management, and strictly carry out production and inspection in accordance with standard requirements, especially the newly added surface metal and body metal content detection.
  2. Purchasers: Clarify various technical indicators when signing the contract, and negotiate with suppliers to determine the specific requirements of some projects based on actual needs.
  3. Testing agencies: Use automated, high-precision testing equipment to ensure effective evaluation of geometric parameters (such as curvature, local flatness) and surface quality.
  4. Industry collaboration: Promote upstream and downstream semiconductor companies to jointly establish a standard compliance verification mechanism to promote technical exchanges and cooperation.

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