Crystal Core Optoelectronics

Crystal Core Optoelectronics, Total:105 items.

The international standard classification for "Crystal Core Optoelectronics" includes: Glass products , Semiconducting materials , Welding consumables .

The Chinese standard classification for "Crystal Core Optoelectronics" includes: Special glass , Technical management , Industrial technical glass , Elemental semiconductor material , Optical communication equipment , Material and component for instrument and meter , Welding and cutting .

工业和信息化部

SJ/T 11758-2020 Test method for determining the aspect ratio of solar cell's grid line electrode by confocal laser scanning microscope

Group Standards of the People's Republic of China

T/SZBX 018-2021 Products of Wafer Level Chip Scale Package
T/CSTM 00463-2022 Classification of black rings in N-type crystalline silicon photovoltaic cells
T/CVIA 84-2021 Mini LED Backlight LCD TV Technical Requirements
T/CPIA 0055.2-2024 Crystalline silicon photovoltaic cells Part 2: Heterojunction photovoltaic cells
T/CPIA 0048.1-2022 Guidelines for making crystalline silicon reference photovoltaic cellof production lines-Part 1: Homojunction crystalline siliconphotovoltaic cell
T/CPIA 0020-2020 Electroluminescence Test Method for Crystalline Silicon Photovoltaic Cells
T/CVIA 83-2021 Mini LED Backlight LCD TV Test Method
T/JSSIA 0003-2017 Series Programs for Wafer Level Chip Scale Package
T/CPIA 0048.2-2023 Guidelines for Manufacturing Standard Crystalline Silicon Photovoltaic Cells for Production Lines Part 2: Heterogeneous Crystalline Silicon Photovoltaic Cells
T/CSTM 00316-2022 Optoelectric single crystals - Lithium tantalate single crystals for pyroelectric infrared detection
T/CSTM 00463-2023 Classification of black rings in N-type crystalline silicon photovoltaic cells
T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells
T/ZJSEE 0010-2023 Test and defect judgement method for crystalline silicon moudules in photovoltaic power staion by electroluminescence(EL)imaging
T/JSSIA 0004-2017 Outline Dimensions of Wafer Level Chip Scale Package
T/CPIA 0041-2022 Measurement of light and elevated temperature induced degradation(LETID) of crystalline silicon solar cells
T/ZZB 2206-2021 Laser welding equipment for motor stator core
T/SBX 019-2019 Storage Specifications for Optoelectronic Chips

Taiwan Provincial Standard of the People's Republic of China

CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

GB/T 35847-2018 Switchable glazing filmed by polymer dispersed liquid crystal

Professional Standard - Electron

SJ/T 2217-2014 Technical specification for phototransistor of silicon
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ 50033/111-1996 Semiconductor optoelectronic devices - Detail specification for Type GT16 Si. NPN phototransistor
SJ/T 11801-2024 Silver paste for back side of crystalline silicon photovoltaic cells
SJ/T 11802-2024 Front silver paste for crystalline silicon photovoltaic cells

Professional Standard - Building Materials

JC/T 2129-2012 Laminated electron - switchable visibility - control glass functioned by liquid crystal material

Fujian Provincial Standard of the People's Republic of China

DB35/T 1126-2011 Low-light amorphous silicon solar cell

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 15651.7-2024 Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors
GB/T 42666-2023 Electronic dyed liquid crystal dimmable glass
GB/T 29055-2019(英文版) Multi crystalline silicon wafers for photovoltaic solar cell

Professional Standard - Non-ferrous Metal

YS/T 1061-2015 Silicon core for polysilicon by improved siemens method

Professional Standard - Post and Telecommunication

YD/T 899-1997 Dual-fibre optical cable
YD/T 898-1997 Single-fiber optical cable

Professional Standard - Machinery

JB/T 9495.1-1999 Optical Crystals

国家市场监督管理总局、中国国家标准化管理委员会

GB/T 10045-2018 Tubular cored electrodes for non-alloy and fine grain steels
GB/T 12964-2018 Monocrystalline silicon polished wafers
GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit

Military Standard of the People's Republic of China-General Armament Department

GJB 9463-2018 Rubidium titanyl phosphate (RTP) electro-optical crystal specifications

Professional Standard - Aviation

HBm 66.33-1989 Minivan Transistor Flasher Relay

未注明发布机构

SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS

ES-UNE

UNE-EN 120003:1992 BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
UNE-EN IEC 63202-1:2020 Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
UNE-EN 120004:1992 BDS: AMBIENT RATED PHOTOCOUPLERS WITH PHOTOTRANSISTORS OUTPUT. (Endorsed by AENOR in September of 1996.)
UNE-EN 60794-2-20:2014 Optical fibre cables - Part 2-20: Indoor cables - Family specification for multi-fibre optical cables (Endorsed by AENOR in July of 2014.)

SE-SIS

SIS SS CECC 20003-1988 Blank detail specification: Phototransistors, photodar/ington transistors, phototransistor arrays

German Institute for Standardization

DIN EN 120003:1996 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
DIN EN 120003:1996-11 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992

European Standard for Electrical and Electronic Components

EN 120003:1992 Blank detail specification: phototransistors, photodarlington transistors, phototransistor arrays
CECC 20 004- 006 ISSUE 1-1988 Photocoupler with Phototransistors Output Type Number: SFH 601 (En)

Association Francaise de Normalisation

NF C93-120-003*NF EN 120003:1992 Blank detail specification : phototransistors, photodarlington transistors, phototransistor arrays
NF EN 120003:1992 Special framework specification: phototransistors, photodarlington transistors, phototransistor networks
NF C57-331*NF EN IEC 63202-1:2019 Photovoltaic cells - Part 1 : measurement of light-induced degradation of crystalline silicon photovoltaic cells
NF EN IEC 63202-1:2019 Photovoltaic cells - Part 1: measuring light-induced degradation of crystalline silicon photovoltaic cells
NF EN 62595-2:2013 Backlit LCD screen - Part 2: electro-optical measurement methods for an LED backlit screen
NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.

Lithuanian Standards Office

LST EN 120003-2001 Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays

SCC

DANSK DS/EN 120003:2016 Blank Detail Specification: Phototransistors, photodarlington transistors, phototransistor arrays
BS PD IEC TS 63202-2:2021 Photovoltaic cells-Electroluminescence imaging of crystalline silicon solar cells
UNE 20703:1992 MULTIFIBER OPTICAL CABLES.
DANSK DS/EN IEC 63202-1:2019 Photovoltaic cells – Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
CEI EN IEC 63202-1:2020 Photovoltaic cells Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
IEC 60329:1971 Strip-wound cut cores of grain oriented silicon-iron alloy, used for electronic and telecommunication equipment
BS PD IEC TS 63202-4:2022 Photovoltaic cells-Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells
DANSK DS/IEC TS 63202-2:2022 Photovoltaic cells – Part 2: Electroluminescence imaging of crystalline silicon solar cells
MIL MIL-PRF-85045/19A-1999 CABLE, FIBER OPTIC, TWENTY FOUR, THIRTY THREE, AND THIRTY SIX FIBERS, CABLE CONFIGURATION TYPE 2 (OFCC), APPLICATION B (SHIPBOARD), CABLE CLASS SM AND MM, (METRIC) (SUPERSEDING MIL-C-85045/19)
UNE-EN 60794-2-20:2011 Optical fibre cables -- Part 2-20: Indoor optical fibre cables - Family specification for multi-fibre optical distribution cables
09/30192488 DC BS EN 62595. Electro-optical measurement methods of LED backlight unit for liquid crystal displays

Korean Agency for Technology and Standards (KATS)

KS D 0071-2002 Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-2002(2017) Measuring method for high frequency core loss in amorphous magnetic cores
KS C 8561-2015 Crystalline silicone photovoltaic(PV) module(performance)
KS D 0071-2022 Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-2002(2022) Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-1993 Measuring method for high frequency core loss in amorphous magnetic cores
KS B 5242-2001 Optical parallels
KS B 5242-1985 Optical parallels

Japanese Industrial Standards Committee (JISC)

JIS H 7153:1991 Measuring method for high frequency core loss in amorphous magnetic cores
JIS B 7431:1977 Optical parallels
JIS C 6870-2-10:2021 Optical fiber cables -- Part 2-10: Indoor cables -- Family specification for simplex and duplex cables
JIS C 6830:1998 Optical fiber cords

British Standards Institution (BSI)

BS EN 120003:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays
BS EN 120003:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
BS EN IEC 63202-1:2019 Photovoltaic cells - Measurement of light-induced degradation of crystalline silicon photovoltaic cells
PD IEC TS 63202-2:2021 Photovoltaic cells. Electroluminescence imaging of crystalline silicon solar cells
PD IEC TS 63202-4:2022 Photovoltaic cells - Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JEP160-2011 Long-Term Storage for Electronic Solid-State Wafers, Dice, and Devices

GSO

GSO IEC 60794-2-42:2015 Optical fibre cables - Part 2-42: Indoor optical fibre cables - Product specification for simplex and duplex cables with A4 fibres
OS GSO IEC 60329:2014 Strip-wound cut cores of grain oriented silicon-iron alloy, used for electronic and telecommunication equipment
GSO IEC 63202-1:2021 Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
BH GSO IEC 63202-1:2022 Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
BH GSO IEC 60329:2016 Strip-wound cut cores of grain oriented silicon-iron alloy, used for electronic and telecommunication equipment
BH GSO IEC 60747-5-7:2022 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
GSO IEC 60747-5-7:2021 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
GSO IEC 60329:2014 Strip-wound cut cores of grain oriented silicon-iron alloy, used for electronic and telecommunication equipment

CZ-CSN

CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current

American National Standards Institute （ANSI)

ANSI/ASTM A901:1997 Specification for Amorphous Magnetic Core Alloys Semi-Processed Types

International Electrotechnical Commission (IEC)

IEC 60329:1984 Strip-wound cut cores of grain oriented silicon-iron alloy, used for electronic and telecommunication equipment
IEC 63202-1:2019 Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells
IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
IEC 60329:1985 Strip-wound cut cores of grain oriented silicon-iron alloy, used for electronic and telecommunication equipment
IEC TS 63202-2:2021 Photovoltaic cells - Part 2: Electroluminescence imaging of crystalline silicon solar cells

European Committee for Electrotechnical Standardization（CENELEC）

EN IEC 63202-1:2019 Photovoltaic cells - Part 1: Measurement of light-induced degradation of crystalline silicon photovoltaic cells

RO-ASRO

STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics

Defense Logistics Agency

DLA MIL-PRF-24623/7 A-2013 SPLICE, MECHANICAL, SIMPLEX FIBER OPTIC CABLE, AIRCRAFT

ZA-SANS

SANS 60794-2-10:2006 Optical fibre cables Part 2-10: Indoor cables - Family specification for simplex and duplex cables

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