Crystal core p

Crystal core p, Total:61 items.

The international standard classification for "Crystal core p" includes: Semiconducting materials , Welding consumables .

The Chinese standard classification for "Crystal core p" includes: Elemental semiconductor material , Welding and cutting .

Professional Standard - Non-ferrous Metal

YS/T 1061-2015 Silicon core for polysilicon by improved siemens method
YS/T 1061-2024 Silicon cores for polysilicon

Group Standards of the People's Republic of China

T/JSSIA 0003-2017 Series Programs for Wafer Level Chip Scale Package
T/CASAS 003-2018 4H-SiC Epitaxial Wafers for p-IGBT Devices
T/ICMTIA SM0027-2022 300mm p-type silicon single crystal polished wafer for advanced memory technology
T/JSSIA 0004-2017 Outline Dimensions of Wafer Level Chip Scale Package
T/SZBX 018-2021 Products of Wafer Level Chip Scale Package

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 10045-2018 Tubular cored electrodes for non-alloy and fine grain steels

Professional Standard - Electron

SJ/T 11758-2020 Test method for determining the aspect ratio of solar cell's grid line electrode by confocal laser scanning microscope

Defense Logistics Agency

DLA MIL-PRF-19500/657 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/295 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DLA MIL-PRF-19500/295 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB

Military Standards (MIL-STD)

MIL MIL-PRF-19500/657C-2020 Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
MIL MIL-PRF-19500/657B-2011 Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
MIL MIL-DTL-642/14A-2003 PLUGS, TELEPHONE (TYPE U-384/U) 5 CONDUCTOR, SINGLE (SUPERSEDING MIL-P-642/14)
MIL MIL-P-46320C-1963 POWER SUPPLY, 10516158 (TRANSISTORIZED) (SUPERSEDING MIL-P-46320B)
MIL MIL-PRF-19500/657A-2000 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC (SUPERSEDING MIL-PRF-19500/657)
MIL MIL-PRF-19500/657-1997 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANJC, AND JANKC (S/S BY MIL-PRF-19500/657A)
MIL MIL-PRF-19500/748B-2017 TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505, JANTX, JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/748A)
MIL MIL-PRF-19500/741-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
MIL MIL-PRF-19500/741A-2009 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
MIL MIL-PRF-19500/741B-2018 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
MIL MIL-P-24705A-1992 PENETRATORS, MULTIPLE CABLE, FOR ELECTRIC CABLES, GENERAL SPECIFICATION FOR (SUPERSEDING MIL-P-24705)
MIL MIL-P-45536A-1964 POWER SUPPLY, TRANSISTORIZED, 16-KILOVOLT (NO S/S DOCUMENT) (SUPERSEDING MIL-P-45536)
MIL MIL-PRF-19500/295G-2020 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-P-642/13B-1988 PLUGS, TELEPHONE (TYPE PJ-777, PJ-778) 3 CONDUCTOR, SINGLE DOUBLE (SUPERSEDING MIL-P-642/13A)
MIL MIL-PRF-19500/295E-2004 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/296D-2003 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N2609, JAN, AND U
MIL MIL-PRF-19500/296C-2001 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB

Korean Agency for Technology and Standards (KATS)

KS D 0071-2002 Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-2002(2017) Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-2022 Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-2002(2022) Measuring method for high frequency core loss in amorphous magnetic cores
KS D 0071-1993 Measuring method for high frequency core loss in amorphous magnetic cores

Japanese Industrial Standards Committee (JISC)

JIS H 7153:1991 Measuring method for high frequency core loss in amorphous magnetic cores

Czech Standards Institute (UNMZ)

CSN 34 7844-1972 Signal cables with p. v. c. — insulated copper cores, p. v. c. — covered
CSN 34 7842-1972 Signal cables with polyethylene--insulated copper cores and p. v. c.

Aerospace, Security and Defence Industries Association of Europe (ASD)

PREN 2235-1999 Aerospace Series Single and Multicore Electrical Cables@ Screened and Jacketed (Edition P 2)
PREN 2235-2004 Aerospace series Single and multicore electrical cables@ screened and jacketed Technical specification (Edition P 3)
PREN 2235-2019 Aerospace series Single and multicore electrical cables@ screened and jacketed Technical specification (Edition P 5)
PREN 2235-2013 Aerospace series Single and multicore electrical cables@ screened and jacketed Technical specification (Edition P 4)
ASD-STAN PREN 2235-2013 Aerospace series Single and multicore electrical cables, screened and jacketed Technical specification (Edition P 4)
PREN 4611-002-2017 Aerospace series Cables@ electrical@ for general purpose@ single and multicore assembly XLETFE Family Part 002: General (Edition P 2)

American National Standards Institute （ANSI)

ANSI/ASTM A901:1997 Specification for Amorphous Magnetic Core Alloys Semi-Processed Types

German Institute for Standardization

DIN EN 129202/A1:1996 Blank detail specification: Wirewound inductors with ceramic or ferrite core - Assessment level P; German version EN 129202:1994/A1:1995

BELST

STB 832-2001 Pеаt fоr соmрosts рrераrаtion. Technical specifications

American Society for Testing and Materials (ASTM)

ASTM A901-03(2008) Standard Specification for Amorphous Magnetic Core Alloys, Semi-Processed Types
ASTM A901-19 Standard Specification for Amorphous Magnetic Core Alloys, Semi-Processed Types
ASTM A901-24 Standard Specification for Amorphous Magnetic Core Alloys, Semi-Processed Types
ASTM A901-03 Standard Specification for Amorphous Magnetic Core Alloys, Semi-Processed Types
ASTM A901-12 Standard Specification for Amorphous Magnetic Core Alloys, Semi-Processed Types
ASTM A901-97 Standard Specification for Amorphous Magnetic Core Alloys, Semi-Processed Types

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JEP160-2011 Long-Term Storage for Electronic Solid-State Wafers, Dice, and Devices
JEDEC JESD22-B118A-2021 Semiconductor Wafer and Die Backside External Visual Inspection
JEDEC JESD22-B118-2011 Semiconductor Wafer and Die Backside External Visual Inspection

Bureau of Indian Standards

IS 8644-1977 Specification for wound cores from grain-oriented ferrosilicon alloy strip

European Committee for Electrotechnical Standardization（CENELEC）

EN 129202:1994 Blank Detail Specification: Wirewound Inductors with Ceramic or Ferrite Core. Assessment Level P

European Standard for Electrical and Electronic Components

CECC 50 004- 084 ISSUE 1-1980 BS CECC 50 004-084; P-N-P Ambient Rated Silicon Planar Switching Transistor in Hermetically Sealed Metal Case (En)

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