Polycrystalline vs Single Crystal
Polycrystalline vs Single Crystal, Total:86 items.
The international standard classification for "Polycrystalline vs Single Crystal" includes: Semiconducting materials , Other non-ferrous metals and their alloys , Piezoelectric and dielectric devices , Testing of metals , Insulating gases , Energy and heat transfer engineering in general , Cadmium, cobalt and their alloys , Non-destructive testing of metals , Optics and optical measurements , Electric furnaces , Sugar. Sugar products. Starch , Other products of non-ferrous metals .
The Chinese standard classification for "Polycrystalline vs Single Crystal" includes: Compound semiconductor material , Semimetal , Rare scattered metals and their alloys , Elemental semiconductor material , Quartz crystal and piezoelectric element , Metal physical property test method , Semimetal and semiconductor material in general , Technical management , Rare refractory metals and their compounds , Metal nondestructive testing method , Artificial lens , Industrial electric heating equipment , Processed sugar , Sugar refining , Technical management .
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 5238-2009(英文版) Monocrystalline germanium and monocrystalline germanium slices
- GB/T 25074-2017(英文版) Solar grade polycrystalline silicon
- GB/T 15713-1995 Monocrystalline germanium slices
- GB/T 12963-2009 Specification for Polycrystalline Silicon
- GB/T 11072-1989 Indium antimonide polycrystal, single crystals and as-cut slices
- GB/T 12964-2003 Monocrystalline silicon polished wafers
- GB/T 30118-2013 Single Crystal Wafers for Surface Acoustic Wave (SAW) Device Applications - Specifications and Measuring Methods
- GB/T 12962-1996 Monocrystalline silicon
- GB/T 12962-2005 Monoccrystalline silicon
- GB/T 20230-2006 Indium phosphide single crystal
- GB/T 12963-1996 Polycrystalline silicon
- GB/T 25074-2010 Solar-grade polycrystalline silicon
- GB/T 20228-2006 Gallium arsenide single crystal
- GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
- GB/T 5238-2009e Monocrystalline germanium and monocrystalline germanium slices
- GB/T 31092-2022 Monocrystalline sapphire bar
- GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
- GB/T 12962-2015 Monocrystalline silicon
- GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices
- GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
- GB/T 29504-2013 300 mm monocrystalline silicon
- GB/T 20229-2006 Gallium phosphide single crystal
- GB 29447-2012 The norm of energy consumption per unit products of polysilicon enterprise
- GB/T 5238-1995 Monocrystalline germanium
- GB 29447-2022 The norm of energy consumption per unit products of polysilicon and germanium
- GB/T 12963-2022 Electronic-grade polycrystalline silicon
- GB/T 5238-2009 Monocrystalline germanium and monocrystalline germanium slices
- GB/T 12963-2014 Electronic-grade polycrystalline silicon
- GB/T 14843-1993 Lithium niobate single crystals
- GB/T 31092-2014 Monocrystalline sapphire ingot
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 36706-2018 Polycrystalline indium phosphide
- GB/T 20230-2022 Indium phosphide single crystal
- GB/T 39137-2020 Determination for the orientation of refractory metal single crystal
- GB/T 20229-2022 Gallium phosphide single crystal
- GB/T 20228-2021 Gallium arsenide single crystal
- GB/T 5238-2019 Monocrystalline germanium and monocrystalline germanium slices
- GB/T 26069-2022 Annealed monocrystalline silicon wafers
- GB/T 39865-2021 Method for measuring refractive index of uniaxial optical crystals
- GB/T 12964-2018 Monocrystalline silicon polished wafers
Group Standards of the People's Republic of China
- T/ACRI 0025-2020 Multi-composite spinel brick
- T/IAWBS 001-2021 Silicon carbide single crystal
- T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells
- T/ZSA 72-2019 Monocrystalline Silicon Carbide
- T/ZZB 0916-2018 Gyromagnetic polycrystalline ferrite
- T/NXCL 31-2024 Conical seed crystals for Czochralski monocrystalline silicon growth
- T/ZZB 1041-2019 Polycrystalline silicon solar cell
- T/CBCSA 36-2021 Corundum polycrystalline slab
- T/ZZB 0497-2018 Single crystal wafers for surface acoustic wave device applications
- T/ZZB 0061-2016 Polycrystalline silicon ingot production furnace
Professional Standard - Machinery
- JB/T 10439-2004 Crystal growing furnaces TDR-series crystal growing furnaces by Czochralski method
Hebei Provincial Standard of the People's Republic of China
- DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer
Professional Standard - Light Industry
- QB/T 1174-2002 Multicrystal rock sugar
- QB/T 1174-1991 Multicrystal rock sugar
- QB/T 1173-1991 Monocrystal rock sugar
- QB/T 1173-2002 Monocrystal rock sugar
轻工业部
- QB 1173-1991 Monocrystal Rock Sugar
- QB 1174-1991 Multicrystal Rock Sugar
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal
- GB/T 25074-2017 Solar-grade polycrystalline silicon
Professional Standard - Electron
- SJ 20444-1994 Specification for Lithium Niobate singlecrystal
- SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
- SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
Professional Standard - Non-ferrous Metal
- YS/T 42-2010 Lithium tantalate single crystals
- YS/T 554-2007 Lithium niobate single crystals
- YS/T 1167-2016 Monocrystalline silicon etched wafers
- YS/T 554-2006 Lithium niobate single crystals
工业和信息化部
- YS/T 724-2016 Silicon power for polycrystalline
- YS/T 1359-2020 Lithium tantalate polycrystalline powder
Jiangxi Provincial Standard of the People's Republic of China
- DB36/ 652-2012 The norm of energy consumption per unit product of polysilicon
Korean Agency for Technology and Standards (KATS)
- KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS D 2715-2017 Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS D 2715-2006(2011) Tensile specimen of single- and poly-crystal nano/micro thin film materials
CZ-CSN
- CSN 42 4991-1970 Polycristallinic germanium
- CSN 34 5911-1986 Polycrystalline silicion
UNKNOWN
- YB 1601-83 Silicon polycrystalline
- YB 1601-1983 Silicon polycrystalline
- YB 1602-83 Silicon single crystal
- YB 1602-1983 Silicon single crystal
Semiconductor Equipment and Materials International (SEMI)
- SEMI M55-0308-2008 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
Defense Logistics Agency
- DLA SMD-5962-87711 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA SMD-5962-85508 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, MULTIPLEXER, MONOLITHIC SILICON
CN-DB 1
- DB1502/T 027-2024 Energy consumption limit per unit product in polysilicon production
German Institute for Standardization
- DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)
Spanish Association for Standardization (UNE)
- UNE-EN 168100:1993 SS: QUARTZ CRYSTAL UNITS. (Endorsed by AENOR in November of 1996.)
RU-GOST R
- GOST 19658-1981 Monocrystalline silicon in ingots. Specifications
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