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single crystal introduction core changes standard revision technical indicators requirements gallium phosphide key technical requirements dislocation density control new packages-mould-proof packaging test method scopethis standard glass fiber tubes stability-centipedegrass [ eremochloa ophiuroides
GB/T 20229-2022 in English

GB/T 20229-2022 in English

VALID

Gallium phosphide single crystal

  • Issued on:2022-03-09
  • Implemented on:2022-10-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $200.00
$194.00
Standard No: GB/T 20229-2022
Document status: VALID
Title in English: Gallium phosphide single crystal
Title in Chinese: 磷化镓单晶
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2022-03-09
Implemented on: 2022-10-01
Superseding: GB/T 20229-2006 Gallium phosphide single crystal
ICS Classification: 29.045-Semiconducting materials
Chinese Classification: H83-Compound semiconductor material
Professional Classification: GB-National Standard
Related Keywords: single crystal introduction core changes
standard revision technical indicators requirements
gallium phosphide
key technical requirements
dislocation density control new
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《GB/T 20229-2022磷化镓单晶》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC2(全国半导体设备和材料标准化技术委员会材料分会)执行,主管部门为国家标准化管理委员会。


Introduction

Core changes in the standard revision

Technical indicators Requirements of the 2006 version Changes to the 2022 version
Electrical properties Only n-type ingots are specified New p-type and semi-insulating indicators are added
Dislocation density No requirements New grading standards (Grades I~III)
Grinding sheet specifications Only 50.8mm diameter Expanded to 63.5/76.2mm

Analysis of key technical requirements

1. Electrical performance indicators

The standard divides GaP single crystals into three categories according to the conductivity type:

  • n-type doped ingot: sulfur (S), tellurium (Te), zinc (Zn), resistivity 0.01-0.5Ω·cm
  • p-type ingot: new iron (Fe) doping requirements, carrier concentration 1×1017-1×1018cm-3
  • semi-insulating type: resistivity ≥1×107Ω·cm

2. Dislocation density control

New normative appendix A specifies the corrosion test method in detail:

Key steps:
  1. Use HNO3:HF:AgNO3=12:8:5 mixed etching solution
  2. Corrosion in a 70℃±2℃ water bath for 10-12 minutes
  3. Observe the (111) triangular corrosion pits under a metallographic microscope at 100-500 times

Implementation suggestions

Key points for quality control

  • The 17-point test method should be implemented for ingot acceptance (points are taken at a spacing of D/10 of the diameter)
  • The total thickness variation (TTV) of the grinding sheet must be ≤15μm (50.8mm specification)
  • Surface quality inspection shall be carried out in dark field according to GB/T6624

Standard application scenarios

This standard is particularly suitable for:

  • LED epitaxial wafer substrate material preparation
  • Microwave power device development
  • Surface acoustic wave (SAW) device production

Sample only — not a preview of GB/T 20229-2022
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