GB/T 35308-2017 in English
VALIDEpitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell
- Issued on:2017-12-29
- Implemented on:2018-07-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
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《GB/T 35308-2017太阳能电池用锗基Ⅲ-Ⅴ族化合物外延片》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
Introduction
GB/T 35308—2017 Standard Overview
GB/T 35308—2017 "Ge-based III-V compound epitaxial wafers for solar cells" is an important national standard in China for high-performance semiconductor materials. This standard mainly regulates the terminology, classification, technical requirements and inspection methods of germanium-based III-V compound epitaxial wafers used in solar cells, providing a unified technical reference and quality assessment basis for the industry.
Background and significance of standard drafting
With the rapid development of solar cell technology, germanium-based III-V compound epitaxial wafers are the core materials of high-performance photovoltaic devices, and their quality and performance are directly related to the technical level of the entire industry. This standard was proposed and managed by the National Technical Committee for Semiconductor Equipment and Materials Standardization, and the main drafting units include Tianjin Sanan Optoelectronics Co., Ltd., Xiamen Sanan Optoelectronics Technology Co., Ltd. and other leading companies in the industry.
Term Definitions and Core Concepts
| Term | Definition | Application Scenarios |
|---|---|---|
| Epitaxial Wafer | A thin film with a specific crystal structure and composition grown on a single crystal substrate. | One of the core components of a solar cell, used for photoelectric conversion. |
| Lattice Mismatch | The percentage of the difference between the lattice constant of the epitaxial layer and the substrate relative to the lattice constant of the substrate. | An important parameter that affects device performance and reliability, which must be strictly controlled within the range specified in Table 1. |
Standard Framework Comparison and Technical Requirements
The core content of GB/T 35308-2017 revolves around the classification, brand and technical indicators of epitaxial wafers. The following are its main framework and technical requirements:
| Dimensions | Technical Requirements | Standard Basis |
|---|---|---|
| Term Definition | Clear definitions of core terms such as white spots, wafer contamination, and lattice mismatch. | Based on GB/T 14264, it is expanded and supplemented in combination with industry characteristics. |
| Classification and brand | Classification and coding according to battery type, number of junctions, structure and diameter. | The standardized brand system facilitates product identification and quality traceability. |
| Technical indicators | Strict regulations on key parameters such as lattice mismatch, electrical properties of ohmic contact layer, and uniformity of film thickness. | Based on experimental data analysis, ensure the consistency and reliability of device performance. |
Implementation suggestions and application cases
To ensure the effective implementation of GB/T 35308-2017, the following suggestions are for reference:
- Strict classification management: Product identification and classified storage are carried out according to the brand system specified in the standard to facilitate quality traceability.
- Establish a testing process: According to the standard requirements, configure the corresponding testing equipment (such as X-ray diffractometer, secondary ion mass spectrometer, etc.), and formulate a standardized testing process.
- Strengthen process control: During the epitaxial wafer production process, focus on the real-time monitoring of lattice mismatch and surface quality to ensure that the technical indicators meet the requirements.
- Optimize supply chain management: Through the unified implementation of standards, promote collaboration between upstream and downstream companies and improve overall product quality.
In actual applications, it is recommended that relevant companies refer to the surface quality requirements in Table 2 and optimize parameters based on their own process characteristics. For example, in the production of Φ100mm lattice matching structure epitaxial wafers, it should be ensured that the number of white spots is controlled within <20 and the scratch length does not exceed 3mm.
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