GB/T 1552-1995 in English

SUPERSEDED

Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array

Issued on:1995-04-18
Implemented on:1995-01-02
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $240.00
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Standard No:	GB/T 1552-1995
Document status:	SUPERSEDED
Superseded by:	GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Superseded on:	2010-06-01
Title in English:	Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
Title in Chinese:	硅、锗单晶电阻率测定直排四探针法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1995-04-18
Implemented on:	1995-01-02
ICS Classification:	77.040.30-Chemical analysis of metals
Chinese Classification:	H21-Metal physical property test method
Professional Classification:	GB-National Standard
Related Keywords:	monocrystal silicon test method collinear four-probe array scopethis standard volume resistivity silicon
Related Topics:	Resistivity probe Quaternary Probe Measuring Probes for Resistivity Single crystal silicon inspection Detection of single crystal silicon Probe Impedance Silicon Wafer Resistivity Measurement Probe sheet Single crystal silicon inspection gb1552 Probe sample four-probe colocalization probe How to detect single crystal silicon four-probe spm How to determine the single crystal probe method How to determine single crystal direct detection unit probe germanium silicon Four Electron Probes detect a single assay probe Silicon fourth order peak Resistor row electric pair probe Four-probe measurement system Four Probe Test Bench four-probe two-probe Four Probe System High-quality four-probe test bench Handheld four-probe Conductivity level four electricity rate Four Probe Automatic Silicon germanene positioning probe Handheld four-probe GBT1552 Pin Dual Quad Photodetector Principle of four-probe resistance measurement Principle of square resistance test with four probes Steps for measuring resistance using the four-probe method Ground resistance test potential probe Wafer test probe station Four-probe resistance measurement Electronic silicon single crystal Related to resistance probes Standard four-probe method for measuring resistance Resistivity detection technology Four-probe method for testing resistivity Probe qualitative detection method Conductive silicon carbide single wafer resistivity test Dual-electric four-probe test method Four-probe method for measuring resistivity Dual element straight probe calibration method Four Probe Method International gb/t1552 Bed of Nails Test Probes

《GB/T 1552-1995硅、锗单晶电阻率测定直排四探针法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了用直排四探针测量硅、锗单晶电阻率的方法。本标准适用于测量试样厚度和从试样边缘与任一探针端点的最近距离二者均大于探针间距的4倍的硅、锗单晶的体电阻率以及测量直径大于探针间距的10倍、厚度小于探针间距4倍的硅、锗单晶圆片（简称圆片）的电阻率。

Scope

This standard specifies the method for measuring the resistivity of silicon and germanium single crystals with four in-line probes. This standard is applicable to the volume resistivity of silicon and germanium single crystals whose thickness and the shortest distance from the edge of the sample to any probe end point are both greater than 4 times the spacing between the control pins, and for which the diameter is greater than the spacing between the probes. 10 times the resistivity of silicon and germanium single wafers (referred to as wafers) whose thickness is less than 4 times the pin spacing. The measurement range is silicon: 1×10^-3～3×10³Ω·cm, germanium: 1×10^-3, 1×10²Ω·cm .

More samples: JGJ 94-2008 DL/T 368-2010 YD/T 3934-2021

Sample only — not a preview of GB/T 1552-1995

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