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test method non-contact test method silicon slices circular silicon wafers test twisted nematic liquid crystal display devices scopethis specification self-cleaning coated glass scopethis standard environmental monitoring part ii
GB/T 6620-2009 in English

GB/T 6620-2009 in English

VALID

Test method for measuring warp on silicon slices by noncontact scanning

  • Issued on:2009-10-30
  • Implemented on:2010-06-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $180.00
$175.00
Standard No: GB/T 6620-2009
Document status: VALID
Title in English: Test method for measuring warp on silicon slices by noncontact scanning
Title in Chinese: 硅片翘曲度非接触式测试方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2009-10-30
Implemented on: 2010-06-01
Superseding: GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
ICS Classification: 29.045-Semiconducting materials
Chinese Classification: H82-Elemental semiconductor material
Professional Classification: GB-National Standard
Related Keywords: test method
non-contact test method
silicon slices
circular silicon wafers
test
Related Topics: afm contact
silicon wafer
contact plate method
silicon way
Contact sheet cleaning
contact test method
contact spotting
afm contact and
contact test pressure
Warpage
warping
Measure warpage
The purpose of the contact sheet
How to measure warpage
silicon contact
disc warping
disc warping
non contact
Contactless
afm contact
tap and touch
Non-contact resistance measurement
test wafer
test wafer
contact afm
sheet curve
silicon wafer for testing
Silicon test piece
contact plate method
afm semi-contact
GBT6620
GBT6620-1995
GB/T 6620-2009
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Warpage measurement abroad
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Wafer warpage detection

《GB/T 6620-2009硅片翘曲度非接触式测试方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了硅单晶切割片、研磨片、抛光片(以下简称硅片)翘曲度的非接触式测试方法。
本标准适用于测量直径大于50mm,厚度大于180μm 的圆形硅片。本标准也适用于测量其他半导体圆片的翘曲度。本测试方法的目的是用于来料验收或过程控制。本测试方法也适用于监视器件加工过程中硅片翘曲度的热化学效应。


Scope

This standard specifies the non-contact test method for the warpage of silicon single crystal cutting discs, grinding discs and polishing discs. This standard applies to the measurement of circular silicon wafers with a diameter greater than 50 mm and a thickness greater than 180 μm. This standard is also suitable for measuring the warpage of other semiconductor wafers. The purpose of this test method is for incoming material acceptance or process control. This test method is also suitable for monitoring the thermochemical effects of wafer warpage during device processing.

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