GB/T 6620-2009 in English
VALIDTest method for measuring warp on silicon slices by noncontact scanning
- Issued on:2009-10-30
- Implemented on:2010-06-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$175.00
《GB/T 6620-2009硅片翘曲度非接触式测试方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了硅单晶切割片、研磨片、抛光片(以下简称硅片)翘曲度的非接触式测试方法。
本标准适用于测量直径大于50mm,厚度大于180μm 的圆形硅片。本标准也适用于测量其他半导体圆片的翘曲度。本测试方法的目的是用于来料验收或过程控制。本测试方法也适用于监视器件加工过程中硅片翘曲度的热化学效应。
Scope
This standard specifies the non-contact test method for the warpage of silicon single crystal cutting discs, grinding discs and polishing discs. This standard applies to the measurement of circular silicon wafers with a diameter greater than 50 mm and a thickness greater than 180 μm. This standard is also suitable for measuring the warpage of other semiconductor wafers. The purpose of this test method is for incoming material acceptance or process control. This test method is also suitable for monitoring the thermochemical effects of wafer warpage during device processing.

Loading PDF document...
Error loading PDF. Please make sure the file is valid and try again.
We also recommend
-

GB/T 26069-2022 in English
Annealed monocrystalline silicon wafers
2022-03-09 -

GB/T 44334-2024 in English
Silicon epitaxial wafers with buried layers
2024-08-23 -

GB/T 26071-2026 in English
Monocrystalline silicon and wafers for solar cells
2026-01-28 -

GB/T 5238-2019 in English
Monocrystalline germanium and monocrystalline germanium slices
2019-06-04 -

GB/T 29054-2019 in English
Casting multicrystalline silicon brick for photovoltaic solar cell
2019-06-04