GB/T 30869-2014 in English

VALID

Test method for thickness and total thickness variation of silicon wafers for solar cell

Issued on:2014-07-24
Implemented on:2015-02-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $150.00
$146.00

Standard No:	GB/T 30869-2014
Document status:	VALID
Title in English:	Test method for thickness and total thickness variation of silicon wafers for solar cell
Title in Chinese:	太阳能电池用硅片厚度及总厚度变化测试方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2014-07-24
Implemented on:	2015-02-01
ICS Classification:	77.040-Testing of metals
Chinese Classification:	H21-Metal physical property test method
Professional Classification:	GB-National Standard
Related Keywords:	total thickness variation total thickness change silicon wafers discrete measurement method scanning measurement method
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《GB/T 30869-2014太阳能电池用硅片厚度及总厚度变化测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了太阳能电池用硅片(以下简称硅片)厚度及总厚度变化的分立式和扫描式测量方法。
本标准适用于符合 GB/T26071、GB/T29055规定尺寸的硅片的厚度及总厚度变化的测量,分立式测量方法适用于接触式及非接触式测量,扫描式测量方法只适用于非接触式测量。在测量仪器准许的情况下,本标准也可用于其他规格硅片的厚度及总厚度变化的测量。

Scope

This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon wafers for solar cells (hereinafter referred to as silicon wafers). This standard is applicable to the measurement of the thickness and total thickness change of silicon wafers conforming to the dimensions specified in GB/T 26071 and GB/T 29055. The discrete measurement method is applicable to contact and non-contact measurement, and the scanning measurement method is only applicable to Non-contact measurement. This standard can also be used to measure the thickness and total thickness variation of silicon wafers of other specifications, provided that the measuring instrument permits.

More samples: GB 18306-2015 JJG 21-2008 DL/T 368-2010

Sample only — not a preview of GB/T 30869-2014

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