GB/T 39145-2020 in English

VALID

Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry

Issued on:2020-10-11
Implemented on:2021-09-01
File Format:PDF
Delivery:Via email within 1~3 business days

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Standard No:	GB/T 39145-2020
Document status:	VALID
Title in English:	Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
Title in Chinese:	硅片表面金属元素含量的测定电感耦合等离子体质谱法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2020-10-11
Implemented on:	2021-09-01
ICS Classification:	77.040-Testing of metals
Chinese Classification:	H17-Semimetal and semiconductor material analysis method
Professional Classification:	GB-National Standard
Related Keywords:	plasma mass spectrometry introduction analysis surface metal elements test method cr/fe vpd method silicon wafers
Related Topics:	plasma mass spectrometry inductive coupling metal element Inductively Coupled Plasma Mass Spectrometry Metal element content Quadrupole Inductively Coupled Plasma Mass Spectrometry Inductively Coupled Mass Spectrometer inductive coupling Inductance mass spectrometer Inductive coupling calibration Inductive plasma Inductively Coupled Plasma inductance inductive plasma metal element Element content mass spectrometry field ionization Plasma Mass Spectrometry Determination of Metal Elements in Solid Waste by Inductively Coupled Plasma Mass Spectrometry Element content Metal element content silicon wafer Bromine Mass Spectrometry Chromatographic element content plasma mass spectrometry Metal element content detection metal ion plasma in english Ferrous inductive coupling How to determine the content of alloying elements Determination of Metal Elements in Solid Waste by Inductively Coupled Plasma Mass Spectrometry How to measure the content of silicon element Inductively Coupled Plasma Mass Spectrometry Mass spec + content Determination method of silicon element Metal element detection Determination method of silicon element plasma mass spectrometry Coupled inductor Inductive coupling+ Inductively Coupled Plasma Nonmetals Plasma and Mass Spectrometry Detection of silicon content Plasma inductive coupling Plasma inductive coupling Mass Spectrometry Silicon element surface Mass Spectrometry Metals Mass spectrometry element content Quadrupole Inductively Coupled Plasma Mass Spectrometer liquid element content Silicon Spectrum The mass spectrometer has a molecular weight of more than 37 plasma mass spectrometry field ionization mass spectrometry Elemental content in the alloy Solution metal ion content Inductively Coupled Plasma Inductively Coupled Plasma Mass Spectrometry Manganese Inductive coupling standard Inductively Coupled Mass Spectrometry Lithium Detection of silicon element content metal ion solution plasma coupling What is the elemental content of silicon? 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Corresponding wavelength of metal ion inductive coupling Rubber plate metal ion content experiment National testing methods for silicon content Inductively Coupled Plasma Calibration Inductively coupled plasma mass spectrometer calibration Metal ion content detection method Execution of metallic elements of compressed air in the electronics industry How to measure the electron content in metals Optocoupler component quality grade Metal ion free radical determination method Metal silicon industry quality Detection of bulk metal impurities in silicon wafers Bromine method for measuring metal ion content Inductance standards Metal ion detection Standard table of lead element content in aluminum alloys Phosphorus element standard mass spectrum Metal ion detection method Methods for isolating leaf protoplasts Silicon powder content on silicon wafer surface Metal surface element analysis methods

《GB/T 39145-2020硅片表面金属元素含量的测定电感耦合等离子体质谱法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。

Introduction

Analysis of the core content of the standard

GB/T39145-2020 specifies a standardized method for determining trace metals on the surface of silicon wafers using an inductively coupled plasma mass spectrometer (ICP-MS). This standard is applicable to the detection of 12 key metal elements in the range of 10⁸-10¹² atoms/cm².

Comparison of key technologies

Method dimensions	Direct acid drop decomposition (DADD)	Vapor phase decomposition (VPD)
Detection limit	10⁹ atoms/cm²	10⁸ atoms/cm²
Applicable scenarios	Routine detection	Ultra-trace analysis
Degree of automation	Fully automatic operation	Special processing box required

Control of key interference factors

The standard particularly emphasizes the control of 5 types of core interference sources:

Personnel operation: Inspectors are required to pass special training for trace analysis
Environmental cleanliness: The sample preparation area must meet ISO Class 4 standards
Reagent purity: Ultrapure water resistivity>18MΩ·cm
Instrument status: ICP-MS is calibrated regularly according to JJF1159
Memory effect: It is forbidden to detect highly contaminated samples

Implementation suggestions

Based on the experience of standard implementation:

Establish a double standard solution verification mechanism and check the calibration curve regularly
Use collision reaction cell technology for easily interfering elements such as Cr/Fe
VPD method is recommended to be used with class=instrument>Fully automatic sample preparation machine is used
Each batch of tests must include 75%-125% recovery verification

Technology evolution analysis

Compared with earlier methods, this standard has the following major breakthroughs:

Clear distinction between applicable scenarios of DADD and VPD
Introduction of automatic sample preparation equipment specifications
Additional detection requirements for emerging pollutants such as Zn
Establishment of an environmental control system based on ISO cleanliness levels

More samples: GB 18306-2015 YD/T 3934-2021 DL/T 5154-2012

Sample only — not a preview of GB/T 39145-2020

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