GB/T 17170-2015 in English

VALID

Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy

Issued on:2015-12-10
Implemented on:2016-07-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $90.00
$88.00

Standard No:	GB/T 17170-2015
Document status:	VALID
Title in English:	Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
Title in Chinese:	半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2015-12-10
Implemented on:	2016-07-01
Superseding:	GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
ICS Classification:	77.040-Testing of metals
Chinese Classification:	H17-Semimetal and semiconductor material analysis method
Professional Classification:	GB-National Standard
Related Keywords:	deep donor el2 concentration deep donor concentration deep donor el2 single crystal deep donor infrared absorption test method
Related Topics:	Infrared absorption concentration standard Carboxylic Infrared Absorption Infrared test Infrared is Infrared+is Infrared absorption Infrared is infrared absorption edge Test method of carbon concentration in gallium arsenide Infrared concentration Crystalline concentration Infrared peak depth Infrared a Infrared test concentration concentration unit concentration unit concentration relationship Infrared concentration measurement Infrared concentration Infrared test method Infrared Spectrum of Gallium Oxide Infrared test method Absorbance change test concentration is infrared Deuterium gas infrared absorption peak Test sample thickness Infrared + Density Infrared test concentration Absorption peak concentration UV Absorbance Concentration is infrared Many infrared absorption peaks Infrared measurement half height Infrared measurement half height no infrared no infrared as concentration no infrared+ concentration self-absorption UV absorption concentration Absorbance detection method Concentration determined by UV absorption half height of absorption peak single crystal UV absorption concentration absorption peak UV absorption concentration Infrared Density Meter Infrared absorption band Far Infrared Absorption Tester absorption band UV absorption sample concentration UV absorption sample concentration UV Absorption and Concentration Infrared Concentration and Absorbance UV absorption and concentration UV absorption peak concentration Infrared main absorption peak Concentration UV absorption Bromine infrared absorption peak Absorption peak crystallization as infrared How to test the absorption of infrared rays UV absorption spectrum test concentration Infrared test method Infrared absorption detection method Crystal direction concentration Infrared absorption transfer Concentration infrared peak type IR peaks and concentrations Method of testing concentration Infrared a Infrared Absorption Peak Method as infrared Copper absorbs infrared Infrared Absorption Peak Detection low infrared absorption Ammonium infrared absorption peak Concentration of UV absorption Test infrared absorption Infrared Density Meter IR peak shape and concentration absorption concentration Infrared absorption sample preparation method GBT17170 GBT17170-1997 GB/T 17170-2015 Compounds with strong near-infrared absorption UV absorption concentration measurement notch depth test Infrared light penetration depth test Absorption test method Exosome concentration measurement method The main methods for preparing infrared samples are gb/t 17170-1997

《GB/T 17170-2015半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了半绝缘砷化镓单晶深施主 EL2浓度的红外吸收测试方法。
本标准适用于电阻率大于106 Ω・cm 的非掺杂和碳掺杂半绝缘砷化镓单晶深施主 EL2浓度的测定。
本标准不适用于掺铬半绝缘砷化镓单晶深施主 EL2浓度的测定。

Scope

This standard specifies the infrared absorption test method for deep donor EL2 concentration in semi-insulating gallium arsenide single crystal. This standard applies to the determination of the concentration of deep donor EL2 in non-doped and carbon-doped semi-insulating gallium arsenide single crystals with a resistivity greater than 10⁶ Ω·cm. This standard does not apply to the determination of EL2 concentration of chromium-doped semi-insulating gallium arsenide single crystal deep donor.

More samples: GB 18306-2015 QC/T 942-2021 DL/T 368-2010

Sample only — not a preview of GB/T 17170-2015

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