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Database: 365,228(8 Aug 2026)

Infrared test method

Infrared test method, Total:28 items.

The international standard classification for "Infrared test method" includes: Glass in general , Testing of metals , Semiconducting materials , Raw materials and raw glass , Glass .

The Chinese standard classification for "Infrared test method" includes: Technical Management , Semiconductor emitting device , Special glass , Semimetal and semiconductor material analysis method , Elemental semiconductor material , Material and component for instrument and meter , Metal physical property test method .


Military Standard of the People's Republic of China-General Armament Department

Professional Standard - Aerospace

Professional Standard - Electron

  • SJ 2658.7-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Radiant Flux
  • SJ 2658.10-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Modulated Wideband
  • SJ 3249.2-1989 Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption
  • SJ 2658.3-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Backward Voltage
  • SJ 3247-1989 Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference
  • SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
  • SJ 2658.8-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Normal Radiance
  • SJ 2658.4-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Capacitance
  • SJ 3249.4-1989 Infrared absorption test method for EL2 concentration in semi-insulating gallium arsenide
  • SJ 2758-1987 Method of measurement by infrared interference for thickness of homoepitaxial layers
  • SJ 2658.2-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Forward Voltage Drop
  • SJ 2658.5-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Forward Series Resistance
  • SJ 3249.3-1989 Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorpti
  • SJ 2658.6-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Output Optical Power
  • SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 19199-2015 Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
  • GB/T 17170-2015 Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
  • GB/T 7962.17-1987 Colourless optical glass test methods--Least deviation angular test method for refractive index in the ultraviolet and infrared wave band
  • GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
  • GB/T 34184-2017 Test method for infrared refractive index of infrared optical glass--The deflection angle measurement
  • GB/T 19199-2003 Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
  • GB/T 36403-2018 Test methods of infrared transmittance for infrared optical glass—Fourier transform method
  • GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption

Fujian Provincial Standard of the People's Republic of China

  • DB35/T 1472-2014 Infrared Thermography Test Method for Surface Heat Loss of Industrial Boilers

Group Standards of the People's Republic of China