GB/T 35310-2017 in English
VALID200 mm silicon epitaxial wafer
- Issued on:2017-12-29
- Implemented on:2018-07-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$156.00
《GB/T 35310-2017200mm硅外延片》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
Introduction
In-depth analysis of GB/T 35310—2017 silicon epitaxial wafer standard
1. Background of standard formulation and analysis of technological evolution
Silicon epitaxial wafers are the core materials of semiconductor devices and integrated circuits, and their quality is directly related to the performance and reliability of electronic equipment. The formulation of GB/T 35310—2017 standard is based on the technological development needs of the semiconductor industry, aiming to standardize the technical requirements, test methods and quality control processes of 200 mm silicon epitaxial wafers.
With the advancement of integrated circuit manufacturing technology, the size and performance requirements of silicon epitaxial wafers are constantly improving. This standard combines domestic and foreign research results and technical practice experience to ensure that its epitaxial growth quality on N-type and P-type silicon polished substrates reaches the international advanced level.
2. Comparative analysis of standard frameworks
| Standard dimensions | GB/T 35310—2017 requirements | Comparison with international advanced levels |
|---|---|---|
| Conductive type | N-type (phosphorus, arsenic doping), P-type (boron doping) | In line with international standards, compatible with the diversified needs of semiconductor devices |
| Crystal orientation requirements | <111>, <100> and other directions | Meet the crystal orientation requirements of high-performance semiconductor materials |
| Resistivity range | N-type: ≤60 Ω·cm, P type: ≥0.001~60 Ω·cm | Meet the requirements of high-doping and low-doping processes |
3. Standard implementation recommendations and case analysis
Case: Optimization of silicon epitaxial wafer resistivity test method
In actual production, resistivity testing of silicon epitaxial wafers is a key link to ensure product quality. According to the standard requirements, it is recommended to use the GB/T 14141 or GB/T 14146 method for testing, and combine formula (1) to calculate the radial resistivity change:
$$ RV=\frac{\rho_{\mathrm{Max}}-\rho_{\mathrm{Min}}}{\rho_{\mathrm{Max}}+\rho_{\mathrm{Min}}}\times100\% $$
In the case, a company significantly improved the test efficiency and accuracy by introducing automatic testing equipment (such as ICP-MS), and the resistivity deviation was controlled within ±5%, which met the standard requirements.
4. Conclusion and Prospect
GB/T 35310—2017 standard provides comprehensive technical specifications for the production and application of 200 mm silicon epitaxial wafers, which is of great significance to improving the quality of semiconductor materials. In the future, as semiconductor devices develop towards high integration and high performance, it is recommended to further optimize the crystal integrity detection method and explore new doping technologies to meet emerging market needs.
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