GB/T 43885-2024 in English

1. Background and significance of standard formulation

With the rapid development of third-generation semiconductor materials, silicon carbide (SiC) epitaxial wafers, as key basic materials, play an important role in the field of power electronic devices. The formulation of this standard aims to standardize the quality and technical requirements of silicon carbide epitaxial wafers, ensure the healthy development of the industry, and promote the innovation and application of related technologies.

2. Comparison of standard frameworks

3. Interpretation of the main contents of the standard

3.1 Product classification and technical requirements

Silicon carbide epitaxial wafers are divided into n-type and p-type according to the conductivity type, and carrier concentration tester is a commonly used detection tool. The standard clarifies the technical parameters of products with different diameters, for example:

• The allowable deviation of the carrier concentration of the n-type epitaxial layer is ±50%, and the specific value depends on the thickness of the epitaxial layer.
• The allowable deviation of the epitaxial layer thickness decreases with the increase of the diameter, reflecting the high precision requirements.

3.2 Surface quality and geometric parameters

Surface quality and geometric parameters are important indicators for measuring silicon carbide epitaxial wafers. The standard stipulates:

• The front surface must be free of scratches, cracks and other defects, and the back surface must have uniform color.
• Geometric parameters such as total thickness variation (TTV) and warpage (WARP) must be strictly controlled within ±15μm.

4. Implementation suggestions