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silicon wafer surface surface flatness silicon slices scopethis standard silicon surface heat insulation equipment dry-pressed stoneware tiles structural bamboo strip
GB/T 6621-2009 in English

GB/T 6621-2009 in English

VALID

Testing methods for surface flatness of silicon slices

  • Issued on:2009-10-30
  • Implemented on:2010-06-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $110.00
$107.00
Standard No: GB/T 6621-2009
Document status: VALID
Title in English: Testing methods for surface flatness of silicon slices
Title in Chinese: 硅片表面平整度测试方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2009-10-30
Implemented on: 2010-06-01
Superseding: GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
ICS Classification: 29.045-Semiconducting materials
Chinese Classification: H80-Semimetal and semiconductor material in general
Professional Classification: GB-National Standard
Related Keywords: silicon wafer surface
surface flatness
silicon slices scopethis standard
silicon
surface
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《GB/T 6621-2009硅片表面平整度测试方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。


Scope

This standard specifies the method for measuring the flatness of silicon polished wafers with capacitive displacement sensors. Cutting wafers, grinding wafers, and corrosion wafers can also refer to this method. This standard is suitable for measuring the surface flatness of silicon polished wafers with standard diameters of 76mm, 100mm, 125mm, 150mm, 200mm, resistivity not greater than 200Ω•cm and thickness not greater than 1000μm and visually describing the contour of the silicon wafer surface.

Sample only — not a preview of GB/T 6621-2009
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