GB/T 6621-2009 in English
VALIDTesting methods for surface flatness of silicon slices
- Issued on:2009-10-30
- Implemented on:2010-06-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$107.00
《GB/T 6621-2009硅片表面平整度测试方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
Scope
This standard specifies the method for measuring the flatness of silicon polished wafers with capacitive displacement sensors. Cutting wafers, grinding wafers, and corrosion wafers can also refer to this method. This standard is suitable for measuring the surface flatness of silicon polished wafers with standard diameters of 76mm, 100mm, 125mm, 150mm, 200mm, resistivity not greater than 200Ω•cm and thickness not greater than 1000μm and visually describing the contour of the silicon wafer surface.

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