GB/T 19922-2005 in English
VALIDStandard test methods for measuring site flatness on silicon wafers by noncontact scanning
- Issued on:2005-09-19
- Implemented on:2006-04-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$146.00
《GB/T 19922-2005硅片局部平整度非接触式标准测试方法》由339-1(工业和信息化部(电子))归口,主管部门为工业和信息化部(电子)。
本标准规定了用电容位移传感法测定硅片表面局部平整度的方法。本标准适用于无接触、非破坏性地测量干燥、洁净的半导体硅片表面的局部平整度。适用于直径100mm及以上、厚度250μm及以上腐蚀、抛光及外延硅片。
Scope
This standard specifies the method for measuring the local flatness of silicon wafer surface by capacitive displacement sensing method. This standard applies to the non-contact and non-destructive measurement of the local flatness of the dry and clean semiconductor silicon wafer surface. It is suitable for etching, polishing and epitaxial silicon wafers with a diameter of 100 mm and above and a thickness of 250 μm and above.

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